KR980003790A - Mask to prevent the formation of deformed contact holes - Google Patents

Mask to prevent the formation of deformed contact holes Download PDF

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Publication number
KR980003790A
KR980003790A KR1019960023981A KR19960023981A KR980003790A KR 980003790 A KR980003790 A KR 980003790A KR 1019960023981 A KR1019960023981 A KR 1019960023981A KR 19960023981 A KR19960023981 A KR 19960023981A KR 980003790 A KR980003790 A KR 980003790A
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KR
South Korea
Prior art keywords
pattern
mask
transferred
prevent
photoresist
Prior art date
Application number
KR1019960023981A
Other languages
Korean (ko)
Inventor
강호영
김용범
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960023981A priority Critical patent/KR980003790A/en
Publication of KR980003790A publication Critical patent/KR980003790A/en

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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 전사된 패턴의 변형을 방지하는 마스크에 관해 개시한다.The present invention discloses a mask that prevents deformation of the transferred pattern.

본 발명에 의한 마스크는 가로방향과 세로방향으로 이격거리가 다른 다수의 패턴을 갖는 마스크에 있어서, 상기 이격거리가 넓은 패턴사이에 그 자신은 전사되지 않고 상기 패턴이 포토레지스트에 전사되었을 경우 전사된 패턴이 변형되는 것을 방지하는 수단을 구비한다.In the mask according to the present invention, a mask having a plurality of patterns having different distances in a horizontal direction and a vertical direction, which is not transferred between the patterns having a large distance, but is transferred when the pattern is transferred to the photoresist. Means are provided to prevent the pattern from being deformed.

따라서 포토레지스트 패턴의 플로우 과정에서 각 패턴(예컨대 BC)의 비 대칭적인 변형을 방지하여 온전한 패턴을 물질층에 전사함으로써 반도체장치의 수율을 증가시킬 수 있다.Accordingly, the yield of the semiconductor device may be increased by transferring the intact pattern to the material layer by preventing asymmetrical deformation of each pattern (eg, BC) during the flow of the photoresist pattern.

Description

변형된 콘택홀 형성을 방지할 수 있는 마스크Mask to prevent the formation of deformed contact holes

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 의한 마스크의 평면도이다.3 is a plan view of a mask according to the present invention.

제4도는 제3도의 마스크를 이용하여 형성한 포토레지스트 패턴의 단면도이다.4 is a cross-sectional view of a photoresist pattern formed using the mask of FIG.

제5도는 플로우(flow)공정이 끝난 콘택홀을 한정하는 포토레지스트 패턴의 단면도이다.5 is a cross-sectional view of a photoresist pattern defining a contact hole where a flow process is completed.

Claims (2)

가로방향과 세로방향으로 이격거리가 다른 다수의 패턴을 갖는 마스크에 있어서, 상기 이격거리가 넓은 패턴사이에 그 자신은 전사되지 않고 상기 패턴이 포토레지스트에 전사되었을 경우 전사된 패턴이 변형되는 것을 방지하는 수단을 구비하는 것을 특징으로 하는 마스크.A mask having a plurality of patterns having different distances in a horizontal direction and a vertical direction, wherein the pattern is not transferred between the patterns having a large distance and prevents the transferred pattern from being deformed when the pattern is transferred to the photoresist. And means for making a mask. 제1항에 있어서, 상기 수단은 일정한 길이이고 상기 포토레지스트 패턴의 플로우과정에서 포토레지스트의 플로우를 조절할 수 있는 더미라인(dummy line)인 것을 특징으로 하는 마스크.The mask of claim 1, wherein the means is a dummy line having a constant length and configured to control the flow of the photoresist during the flow of the photoresist pattern. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960023981A 1996-06-26 1996-06-26 Mask to prevent the formation of deformed contact holes KR980003790A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960023981A KR980003790A (en) 1996-06-26 1996-06-26 Mask to prevent the formation of deformed contact holes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960023981A KR980003790A (en) 1996-06-26 1996-06-26 Mask to prevent the formation of deformed contact holes

Publications (1)

Publication Number Publication Date
KR980003790A true KR980003790A (en) 1998-03-30

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ID=66287702

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960023981A KR980003790A (en) 1996-06-26 1996-06-26 Mask to prevent the formation of deformed contact holes

Country Status (1)

Country Link
KR (1) KR980003790A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100555463B1 (en) * 1999-01-18 2006-03-03 삼성전자주식회사 Method for flowering photoresist

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100555463B1 (en) * 1999-01-18 2006-03-03 삼성전자주식회사 Method for flowering photoresist

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