KR970018124A - How to form a fine pattern - Google Patents
How to form a fine pattern Download PDFInfo
- Publication number
- KR970018124A KR970018124A KR1019950032976A KR19950032976A KR970018124A KR 970018124 A KR970018124 A KR 970018124A KR 1019950032976 A KR1019950032976 A KR 1019950032976A KR 19950032976 A KR19950032976 A KR 19950032976A KR 970018124 A KR970018124 A KR 970018124A
- Authority
- KR
- South Korea
- Prior art keywords
- pattern
- long line
- small
- adjacent
- fine
- Prior art date
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
긴 라인 패턴과 작은 패턴이 인접한 경우의 브리지 없이 포토레지스트 패턴을 형성하는 미세 패턴 형성 방법에 관하여 개시한다. 본 발명은 긴 라인 패턴과 작은 패턴이 인접한 경우의 미세 패턴 형성 방법에 있어서, 상기 긴 라인 패턴과 인접한 작은 패턴의 변을 톱니 모양 패턴으로 형성한 마스크 패턴을 이용하는 것을 특징으로 하는 미세 패턴 형성 방법을 제공한다. 본 발명의 방법에 의하여 미세 패턴을 형성하는 경우 상기 긴 라인 패턴과 상기 작은 패턴 사이의 상기 스페이스 부분에 종래에 브리지 현상이 발생하던 것을 상기 탭 마스크 패턴의 한 변을 톱니 모양 패턴으로 변형하여 초점 여유를 증가시키고, 상기 스페이스가 최소 선폭을 가지는 미세 패턴의 형성을 가능하게 한다.A fine pattern forming method for forming a photoresist pattern without a bridge when a long line pattern and a small pattern are adjacent is disclosed. The present invention provides a fine pattern forming method in which a long line pattern and a small pattern are adjacent to each other, wherein a mask pattern in which sides of the small pattern adjacent to the long line pattern are formed in a sawtooth pattern is used. to provide. In the case of forming the fine pattern by the method of the present invention, a bridge phenomenon occurs in the space portion between the long line pattern and the small pattern. And increase the width and allow the formation of a fine pattern having the minimum line width.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3도 및 제4도는 각각 긴 라인 패턴과 탭 패턴이 인접한 경우에 본 발명에 의하여 패턴 형성에 사용되는 마스크 패턴 및 반도체 기판에 형성된 포토레지스트 패턴이다.3 and 4 are photoresist patterns formed on a semiconductor substrate and a mask pattern used for pattern formation according to the present invention when the long line pattern and the tab pattern are adjacent to each other.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950032976A KR970018124A (en) | 1995-09-29 | 1995-09-29 | How to form a fine pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950032976A KR970018124A (en) | 1995-09-29 | 1995-09-29 | How to form a fine pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970018124A true KR970018124A (en) | 1997-04-30 |
Family
ID=66615644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950032976A KR970018124A (en) | 1995-09-29 | 1995-09-29 | How to form a fine pattern |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970018124A (en) |
-
1995
- 1995-09-29 KR KR1019950032976A patent/KR970018124A/en not_active Application Discontinuation
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Legal Events
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WITN | Withdrawal due to no request for examination |