KR970048925A - Masks used in the manufacture of semiconductor devices - Google Patents

Masks used in the manufacture of semiconductor devices Download PDF

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Publication number
KR970048925A
KR970048925A KR1019950057028A KR19950057028A KR970048925A KR 970048925 A KR970048925 A KR 970048925A KR 1019950057028 A KR1019950057028 A KR 1019950057028A KR 19950057028 A KR19950057028 A KR 19950057028A KR 970048925 A KR970048925 A KR 970048925A
Authority
KR
South Korea
Prior art keywords
mask
dlc
dummy
mask pattern
pattern
Prior art date
Application number
KR1019950057028A
Other languages
Korean (ko)
Inventor
남정림
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950057028A priority Critical patent/KR970048925A/en
Publication of KR970048925A publication Critical patent/KR970048925A/en

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  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

촛점심도 마진 및 해상도를 증가시킬 수 있는 DLC(dummy fined mask) 마스크에 관하여 개시한다. 본 발명은 마스크 기판에 콘택용 마스크 패턴과 더미용 마스크 패턴을 갖는 DLC 마스크에 있어서, 상기 콘택용 마스크 패턴은 상기 마스크 기판의 제1영역에 형성되고, 상기 더미용 마스크 패턴은 상기 마스크 기판의 제2영역에 형성된 것을 특징으로 하는 DLC 마스크를 제공한다. 본 발명은 콘택용 마스크 패턴과 더미용 마스크 패턴을 나누어 배치함으로써 마스크를 검사시 결함의 검사가 쉬워지고, DLC 마스크의 장점 또한 유지할 수 있다.Disclosed is a dummy fined mask (DLC) mask that can increase the depth of focus margin and resolution. A DLC mask having a contact mask pattern and a dummy mask pattern on a mask substrate, wherein the contact mask pattern is formed in a first region of the mask substrate, and the dummy mask pattern is formed on the mask substrate. Provided is a DLC mask formed in two regions. According to the present invention, by arranging the contact mask pattern and the dummy mask pattern separately, it is easy to inspect defects when inspecting the mask and maintain the advantages of the DLC mask.

Description

반도체 장치의 제조에 사용되는 마스크Masks used in the manufacture of semiconductor devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 의한 DLC 마스크를 도시한 평면도이다.2 is a plan view showing a DLC mask according to the present invention.

Claims (1)

마스크 기판에 콘택용 마스크 패턴과 더미용 마스크 패턴을 갖는 DLC 마스크에 있어서, 상기 콘택용 마스크 패턴은 상기 마스크 기판의 제1영역에 형성되고, 상기 더미용 마스크 패턴은 상기 마스크 기판의 제2영역에 형성된 것을 특징으로 하는 DLC 마스크.A DLC mask having a contact mask pattern and a dummy mask pattern on a mask substrate, wherein the contact mask pattern is formed in a first region of the mask substrate, and the dummy mask pattern is formed in a second region of the mask substrate. DLC mask, characterized in that formed. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950057028A 1995-12-26 1995-12-26 Masks used in the manufacture of semiconductor devices KR970048925A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950057028A KR970048925A (en) 1995-12-26 1995-12-26 Masks used in the manufacture of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950057028A KR970048925A (en) 1995-12-26 1995-12-26 Masks used in the manufacture of semiconductor devices

Publications (1)

Publication Number Publication Date
KR970048925A true KR970048925A (en) 1997-07-29

Family

ID=66618282

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950057028A KR970048925A (en) 1995-12-26 1995-12-26 Masks used in the manufacture of semiconductor devices

Country Status (1)

Country Link
KR (1) KR970048925A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100389567B1 (en) * 1999-08-19 2003-06-27 엔이씨 일렉트로닉스 코포레이션 Electron beam exposure mask, electron beam exposure method, method of fabricating semiconductor device, and electron beam exposure apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100389567B1 (en) * 1999-08-19 2003-06-27 엔이씨 일렉트로닉스 코포레이션 Electron beam exposure mask, electron beam exposure method, method of fabricating semiconductor device, and electron beam exposure apparatus

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