KR970048927A - Mask pattern for forming fine contact hole in semiconductor device - Google Patents

Mask pattern for forming fine contact hole in semiconductor device Download PDF

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Publication number
KR970048927A
KR970048927A KR1019950057038A KR19950057038A KR970048927A KR 970048927 A KR970048927 A KR 970048927A KR 1019950057038 A KR1019950057038 A KR 1019950057038A KR 19950057038 A KR19950057038 A KR 19950057038A KR 970048927 A KR970048927 A KR 970048927A
Authority
KR
South Korea
Prior art keywords
contact hole
pattern
semiconductor device
mask pattern
contact
Prior art date
Application number
KR1019950057038A
Other languages
Korean (ko)
Inventor
차동호
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950057038A priority Critical patent/KR970048927A/en
Publication of KR970048927A publication Critical patent/KR970048927A/en

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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 반도체장치의 미세 콘택홀 형성을 위한 마스크 패턴에 관한 것으로, 일정크기의 사각형 형태를 갖는 콘택홀 패턴; 상기 콘택홀 패턴의 상변 및 하변에 각각 접하면서 상기 콘택홀의 바깥쪽으로 길게 배치된 복수의 더미라인; 및 상기 콘택홀 패턴의 좌변과 우변에 각각 접하면서 상기 콘택홀의 바깥쪽에 위치하는 위상 반전 패턴을 포함하는 것을 특징으로 하는 반도체장치의 미세 콘택홀 형성을 위한 마스크 패턴을 제공한다.The present invention relates to a mask pattern for forming a fine contact hole of a semiconductor device, the contact hole pattern having a rectangular shape of a predetermined size; A plurality of dummy lines disposed in contact with an upper side and a lower side of the contact hole pattern to extend outwardly of the contact hole; And a phase reversal pattern positioned at an outer side of the contact hole while being in contact with the left side and the right side of the contact hole pattern, respectively.

본 발명에 의하면, 해상도가 우수한 미세 콘택홀을 구현할 수 있다.According to the present invention, it is possible to implement a fine contact hole with excellent resolution.

Description

반도체장치의 미세 콘택홀 형성을 위한 마스크 패턴Mask pattern for forming fine contact hole in semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 실시예에 의한 미세 콘택홀 형성을 우한 마스크 패턴을 도시한 평면도.2 is a plan view showing a mask pattern for the formation of a fine contact hole according to an embodiment of the present invention.

Claims (2)

일정크기의 사각형 형태를 갖는 콘택홀 패턴; 상기 콘택홀 패턴의 상변 및 하변에 각각 접하면서 상기 콘택홀의 바깥쪽으로 길게 배치된 복수의 더미라인; 및 상기 콘택홀 패턴의 좌변과 우변에 각각 접하면서 상기 콘택홀의 바깥쪽에 위치하는 위상 반전 패턴을 포함하는 것을 특징으로 하는 반도체장치의 미세 콘택홀 형성을 위한 마스크 패턴.A contact hole pattern having a rectangular shape having a predetermined size; A plurality of dummy lines disposed in contact with an upper side and a lower side of the contact hole pattern to extend outwardly of the contact hole; And a phase reversal pattern positioned outside the contact hole while contacting the left and right sides of the contact hole pattern, respectively. 제1항에 있어서, 상기 위상반전 패턴을 통과하는 빛은 상기 콘택홀 패턴을 통과하는 빛은 상기 콘택홀 패턴을 통과하는 빛과 180°의 위상차를 갖도록 하는 물질로 형성하는 것을 특징으로 하는 반도체장치의 미세 콘택홀 형성을 위한 마스크 패턴.The semiconductor device of claim 1, wherein the light passing through the phase inversion pattern is formed of a material such that the light passing through the contact hole pattern has a phase difference of 180 ° with the light passing through the contact hole pattern. Mask pattern for forming a fine contact hole. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950057038A 1995-12-26 1995-12-26 Mask pattern for forming fine contact hole in semiconductor device KR970048927A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950057038A KR970048927A (en) 1995-12-26 1995-12-26 Mask pattern for forming fine contact hole in semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950057038A KR970048927A (en) 1995-12-26 1995-12-26 Mask pattern for forming fine contact hole in semiconductor device

Publications (1)

Publication Number Publication Date
KR970048927A true KR970048927A (en) 1997-07-29

Family

ID=66618288

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950057038A KR970048927A (en) 1995-12-26 1995-12-26 Mask pattern for forming fine contact hole in semiconductor device

Country Status (1)

Country Link
KR (1) KR970048927A (en)

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