KR970023639A - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method Download PDF

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Publication number
KR970023639A
KR970023639A KR1019950037803A KR19950037803A KR970023639A KR 970023639 A KR970023639 A KR 970023639A KR 1019950037803 A KR1019950037803 A KR 1019950037803A KR 19950037803 A KR19950037803 A KR 19950037803A KR 970023639 A KR970023639 A KR 970023639A
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KR
South Korea
Prior art keywords
semiconductor device
pattern
manufacturing
effect
psp
Prior art date
Application number
KR1019950037803A
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Korean (ko)
Inventor
고영범
여기성
남정림
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950037803A priority Critical patent/KR970023639A/en
Publication of KR970023639A publication Critical patent/KR970023639A/en

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

반도체장치의 제조방법 특히 노광방법이 개시되어 있다.Disclosed is a method of manufacturing a semiconductor device, in particular an exposure method.

본 발명은 반도체장치의 제조방법에 있어서, 보조패턴이 추가된 PSP(phase shift pattern)을 사용한 위상반전을 통하여 노광공정에서 소자의 형성과 직접 관련되는 주패턴의 인접된 형상들 상호간의 보강간섭 효과를 보정하는 것을 특징으로 한다.In the method of manufacturing a semiconductor device, the effect of constructive interference between adjacent shapes of a main pattern directly related to device formation in an exposure process through phase inversion using a phase shift pattern (PSP) with an auxiliary pattern added thereto. It characterized in that to correct.

따라서, 반도체장치에서 소자 형태의 변형을 방지하여 공정을 용이하게 하고 소자들 간의 구분을 확보할 수 있다는 효과를 가진다.Therefore, the semiconductor device has the effect of preventing the deformation of the shape of the device to facilitate the process and ensure the separation between the devices.

Description

반도체장치 제조방법Semiconductor device manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명의 일 실시예에 따른 노광마스크 패턴을 나타낸 도면이다.3 is a view showing an exposure mask pattern according to an embodiment of the present invention.

Claims (5)

반도체장치의 제조방법에 있어서, 보조패턴이 추가된 PSP(phase shift pattern)을 사용한 위상반전을 통하여 노광공정에서 소자의 형성과 직접 관련되는 주패턴의 인접된 형상들 상호간의 보강간섭 효과를 보정하는 것을 특징으로 하는 반도체장치의 제조방법.In the method of manufacturing a semiconductor device, the effect of reinforcing interference between adjacent shapes of a main pattern directly related to the formation of an element in an exposure process is corrected through phase inversion using a phase shift pattern (PSP) with an auxiliary pattern added thereto. A method of manufacturing a semiconductor device, characterized by the above-mentioned. 제1항에 있어서, 상기 보조패턴의 형상은 상호간의 보강간섭을 일으키는 상기 인접된 형상들 사이에 위치하는 것을 특징으로 하는 상기 반도체장치의 제조방법.The method of claim 1, wherein the shape of the auxiliary pattern is located between the adjacent shapes that cause mutual interference. 제2항에 있어서, 상기 보조패턴의 크기와 형태를 통해 보강간섭 효과를 보정하는 것을 특징으로 하는 상기 반도체장치의 제조방법.The method of claim 2, wherein a reinforcing interference effect is corrected through the size and shape of the auxiliary pattern. 제1항, 제2항 또는 제3항중 어느 한 항에 있어서, 상기 주패턴은 콘택패턴임을 특징으로 하는 상기 반도체장치의 제조방법.The method of manufacturing the semiconductor device according to claim 1, wherein the main pattern is a contact pattern. 제1항, 제2항 또는 제3항중 어느 한 항에 있어서, 상기 보강간섭의 보정은 PSP(phase shift pattern)을 사용한 위상반전을 이용한 것임을 특징으로 하는 상기 반도체장치의 제조방법.4. The method according to any one of claims 1, 2 and 3, wherein the correction of the constructive interference is performed using phase inversion using a phase shift pattern (PSP). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950037803A 1995-10-28 1995-10-28 Semiconductor device manufacturing method KR970023639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950037803A KR970023639A (en) 1995-10-28 1995-10-28 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950037803A KR970023639A (en) 1995-10-28 1995-10-28 Semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
KR970023639A true KR970023639A (en) 1997-05-30

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KR1019950037803A KR970023639A (en) 1995-10-28 1995-10-28 Semiconductor device manufacturing method

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KR (1) KR970023639A (en)

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