KR970012002A - Photomasks for Semiconductor Device Manufacturing - Google Patents

Photomasks for Semiconductor Device Manufacturing Download PDF

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Publication number
KR970012002A
KR970012002A KR1019950028665A KR19950028665A KR970012002A KR 970012002 A KR970012002 A KR 970012002A KR 1019950028665 A KR1019950028665 A KR 1019950028665A KR 19950028665 A KR19950028665 A KR 19950028665A KR 970012002 A KR970012002 A KR 970012002A
Authority
KR
South Korea
Prior art keywords
pattern
semiconductor device
line
photomask
chrome
Prior art date
Application number
KR1019950028665A
Other languages
Korean (ko)
Inventor
이근호
장환수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950028665A priority Critical patent/KR970012002A/en
Publication of KR970012002A publication Critical patent/KR970012002A/en

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

1. 청구 범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION

반도체 소자 제조용 포토마스크Photomasks for Semiconductor Device Manufacturing

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

반도체 소자 제조를 위한 노광 공정시 HALF-TONE PSM 방식을 이용하는 경우 가장 큰 문제점인 사이드로브(SIDE LOBE) 현상에 의해 노광 패턴의 해상도가 나빠지는 등의 문제점이 있었음.When the HALF-TONE PSM method is used in the exposure process for manufacturing a semiconductor device, there is a problem such that the resolution of the exposure pattern is deteriorated due to the side lobe phenomenon, which is the biggest problem.

3. 발명의 해결 방볍의 요지3. Summary of solution of invention

형성하고자 하는 마스크 패턴의 크롬 라인 지역에 대응하는 영역을 공간 라인과 크롬라인이 반복되는 패턴으로 형성한 보조 마스크를 이용하여 사이드 로브 현상을 제거하고자 함.The side lobe phenomenon is removed by using an auxiliary mask in which a region corresponding to the chrome line region of the mask pattern to be formed is formed in a pattern in which the space line and the chrome line are repeated.

4. 발명의 중요한 용도4. Important uses of the invention

반도체소자 제조시 노광 공정에 이용됨.Used in the exposure process in the manufacture of semiconductor devices.

※선택도 제 2도※ Selectivity second degree

Description

반도체소자 제조용 포토마스크Photomasks for Semiconductor Device Manufacturing

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2도는 본 발명에 따른 포토마스크 패턴을 도시하는 도면.2 shows a photomask pattern in accordance with the present invention.

Claims (3)

반도체에 소자의 제조시 위상반전 마스크 방식을 이용한 노광 공정에 이용하기 위한 포토마스크에 있어서, 반도체 소자를 형성하고자 하는 패턴과 동일한 패턴을 가진 주 마스크와, 상기 주 마스크의 패턴중 크롬 라인 지역에 대응하는 영역이 소정의 폭을 갖는 공간 라인과 크롬 라인이 반복되는 패턴으로 형성된 보조 마스크를 포함해서 이루어진 포토마스크.A photomask for use in an exposure process using a phase inversion mask method when manufacturing a device in a semiconductor, the photomask having a main mask having the same pattern as a pattern to form a semiconductor element and a chrome line region of the pattern of the main mask; And a sub mask formed in a pattern in which a space line having a predetermined width and a chrome line are repeated. 제 1항에 있어서, 상기 공간 라인과 크롬 라인의 폭의 비율은 약 1:3 인 것을 특징으로 하는 포토마스크.The photomask of claim 1, wherein a ratio of the widths of the space lines and the chrome lines is about 1: 3. 제 1항 또는 제 2항에 있어서, 상기 공간 라인의 폭은 약 0.4um 이하로 형성되는 것을 특징으로 하는 포토마스크.The photomask of claim 1 or 2, wherein the space line has a width of about 0.4 μm or less. ※ 참고 사항 : 최초출원 내용에 의하여 공개하는 것임※ Note: The disclosure is based on the initial application.
KR1019950028665A 1995-08-30 1995-08-30 Photomasks for Semiconductor Device Manufacturing KR970012002A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950028665A KR970012002A (en) 1995-08-30 1995-08-30 Photomasks for Semiconductor Device Manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950028665A KR970012002A (en) 1995-08-30 1995-08-30 Photomasks for Semiconductor Device Manufacturing

Publications (1)

Publication Number Publication Date
KR970012002A true KR970012002A (en) 1997-03-29

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ID=66597140

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950028665A KR970012002A (en) 1995-08-30 1995-08-30 Photomasks for Semiconductor Device Manufacturing

Country Status (1)

Country Link
KR (1) KR970012002A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100723466B1 (en) * 2001-01-06 2007-05-30 삼성전자주식회사 Photomask for dual damascene process, method thereof and method of forming dual damascene interconnection using the photomask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100723466B1 (en) * 2001-01-06 2007-05-30 삼성전자주식회사 Photomask for dual damascene process, method thereof and method of forming dual damascene interconnection using the photomask

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