KR950021026A - Phase change mask - Google Patents

Phase change mask Download PDF

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Publication number
KR950021026A
KR950021026A KR1019930026880A KR930026880A KR950021026A KR 950021026 A KR950021026 A KR 950021026A KR 1019930026880 A KR1019930026880 A KR 1019930026880A KR 930026880 A KR930026880 A KR 930026880A KR 950021026 A KR950021026 A KR 950021026A
Authority
KR
South Korea
Prior art keywords
phase shift
material layer
forming
light shielding
pattern
Prior art date
Application number
KR1019930026880A
Other languages
Korean (ko)
Other versions
KR0119372B1 (en
Inventor
문승찬
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930026880A priority Critical patent/KR0119372B1/en
Publication of KR950021026A publication Critical patent/KR950021026A/en
Application granted granted Critical
Publication of KR0119372B1 publication Critical patent/KR0119372B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Abstract

본 발명은 위상반전마스크에 관한 것으로, 고해상력을 요하는 고집적소자 제조하기 위하여 파장이 짧은 Duv 또는 Vuv선을 사용할 수 있는 하프톤 PSM데 Sio2+ Cr2O3화합물로 석영기판에 상부에 패턴을 형성하고 이 화합물의 상부에 위상반전물질을 증착하여 위상반전층패턴을 형성함으로써, 패턴형성시 해상력을 높이고 크롬막의 두께로 인한 결함발생을 억제할 수 있다.The present invention relates to a phase inversion mask, a halftone PSM de Sio 2 + Cr 2 O 3 compound that can use a short wavelength Duv or Vuv line to manufacture a high-integration device requiring high resolution pattern on the quartz substrate By forming a phase inversion material on top of this compound by forming a phase inversion layer pattern, it is possible to increase the resolution in forming the pattern and to suppress the occurrence of defects due to the thickness of the chromium film.

Description

위상반전마스크Phase inversion mask

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2C도는 본 발명의 실시예에 의한 하프톤 위상반전 마스크 및 제조공정을 도시한 단면도.2A to 2C are cross-sectional views showing a halftone phase shift mask and a manufacturing process according to an embodiment of the present invention.

Claims (4)

위상반전마스크에 있어서, 석영기판의 상부에 예정된 노광지역의 차광물질층이 제거되어 차광물질층 패턴이 형성되고, 상기 차광물질층패턴에 위상반전층이 중첩되어 이루어지는 것을 특징으로하는 위상반전마스크.The phase shift mask according to claim 1, wherein the light shielding material layer in the predetermined exposure area is removed on the quartz substrate to form a light shielding material layer pattern, and a phase shifting layer is superimposed on the light shielding material layer pattern. 제1항에 있어서, 상기 차광물질층은 Sio2+ Cr2O3화합물로 형성되는 것을 특징으로 하는 위상반전마스크.The phase shift mask of claim 1, wherein the light blocking material layer is formed of a Sio 2 + Cr 2 O 3 compound. 제1항에 있어서, 상기 위상반전층으로 SOG막으로 형성되는 것을 특징으로 하는 위상반전마스크.The phase shift mask according to claim 1, wherein the phase shift layer is formed of an SOG film. 제1항에 있어서, 180Å의 위상반전효과를 얻기 위하여 차광물질층의 두께를 1,000- 2,000Å으로 하여 광투과율이 2-5％로 유지되도록하는 것을 특징으로 하는 위상반전마스크.The phase shift mask according to claim 1, wherein the light shielding material layer has a thickness of 1,000 to 2,000 Hz to maintain a light transmittance of 2-5% in order to obtain a phase shift effect of 180 Hz. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930026880A 1993-12-08 1993-12-08 Phase shift mask KR0119372B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930026880A KR0119372B1 (en) 1993-12-08 1993-12-08 Phase shift mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930026880A KR0119372B1 (en) 1993-12-08 1993-12-08 Phase shift mask

Publications (2)

Publication Number Publication Date
KR950021026A true KR950021026A (en) 1995-07-26
KR0119372B1 KR0119372B1 (en) 1997-09-30

Family

ID=19370249

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930026880A KR0119372B1 (en) 1993-12-08 1993-12-08 Phase shift mask

Country Status (1)

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KR (1) KR0119372B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100458085B1 (en) * 1997-06-30 2005-02-23 주식회사 하이닉스반도체 Method for fabricating semiconductor device to reduce leakage current and improve electron migration characteristic and stress migration characteristic

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100458085B1 (en) * 1997-06-30 2005-02-23 주식회사 하이닉스반도체 Method for fabricating semiconductor device to reduce leakage current and improve electron migration characteristic and stress migration characteristic

Also Published As

Publication number Publication date
KR0119372B1 (en) 1997-09-30

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