KR970016780A - Manufacturing method of halftone phase shift mask - Google Patents

Manufacturing method of halftone phase shift mask Download PDF

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Publication number
KR970016780A
KR970016780A KR1019950029302A KR19950029302A KR970016780A KR 970016780 A KR970016780 A KR 970016780A KR 1019950029302 A KR1019950029302 A KR 1019950029302A KR 19950029302 A KR19950029302 A KR 19950029302A KR 970016780 A KR970016780 A KR 970016780A
Authority
KR
South Korea
Prior art keywords
shielding film
light shielding
film pattern
manufacturing
phase shift
Prior art date
Application number
KR1019950029302A
Other languages
Korean (ko)
Inventor
이중현
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950029302A priority Critical patent/KR970016780A/en
Publication of KR970016780A publication Critical patent/KR970016780A/en

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Abstract

위상 시프터의 하부에 투과율을 조절을 위한 차광막 패턴을 구비한 위상반전 마스크(Phase Shift Mask)의 제조 방법을 개시한다.A method of manufacturing a phase shift mask having a light shielding film pattern for controlling transmittance under the phase shifter is disclosed.

본 발명은 소정 량의 빛을 투과하는 위상 시프터의 투과 영역을 축소하여 사이드-롭(side-lobe)을 방지하기 위하여, 투명한 마스크 기판 상에 먼저 차광막 패턴을 형성한 후, 이 차광막 패턴을 둘러싸는 하프톤 패턴을 형성하는 것을 특징으로 한다.In order to prevent side-lobe by reducing the transmission area of the phase shifter that transmits a predetermined amount of light, the present invention first forms a light shielding film pattern on a transparent mask substrate, and then surrounds the light shielding film pattern. A halftone pattern is formed.

Description

하프톤 위상 시프트 마스크의 제조 방법Method for manufacturing halftone phase shift mask

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 5도는 제 4도의 B-B'선 단면도.5 is a cross-sectional view taken along the line B-B 'of FIG.

Claims (1)

위상반전 마스크를 제조하는 방법에 있어서, 소정 량의 빛을 투과하는 위상 시프터의 투과 영역을 축소하여 사이드-롭(side-lobe)을 방지하기 위하여, 투명한 마스크 기판 상에 먼저 차광막 패턴을 형성한 후, 상기 차광막 패턴 상에 이 차광막 패턴을 둘러싸는 하프톤 패턴을 형성하는 것을 특징으로 하는 위상반전 마스크의 제조 방법.In the method of manufacturing a phase inversion mask, in order to reduce the transmission region of the phase shifter that transmits a predetermined amount of light to prevent side-lobe, first forming a light shielding film pattern on a transparent mask substrate And forming a halftone pattern surrounding the light shielding film pattern on the light shielding film pattern. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950029302A 1995-09-07 1995-09-07 Manufacturing method of halftone phase shift mask KR970016780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950029302A KR970016780A (en) 1995-09-07 1995-09-07 Manufacturing method of halftone phase shift mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950029302A KR970016780A (en) 1995-09-07 1995-09-07 Manufacturing method of halftone phase shift mask

Publications (1)

Publication Number Publication Date
KR970016780A true KR970016780A (en) 1997-04-28

Family

ID=66596466

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950029302A KR970016780A (en) 1995-09-07 1995-09-07 Manufacturing method of halftone phase shift mask

Country Status (1)

Country Link
KR (1) KR970016780A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030023453A (en) * 2001-06-20 2003-03-19 엔이씨 일렉트로닉스 코포레이션 Halftone phase shift mask and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030023453A (en) * 2001-06-20 2003-03-19 엔이씨 일렉트로닉스 코포레이션 Halftone phase shift mask and its manufacturing method

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