KR970076062A - Method of manufacturing phase inversion mask - Google Patents

Method of manufacturing phase inversion mask Download PDF

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Publication number
KR970076062A
KR970076062A KR1019960015562A KR19960015562A KR970076062A KR 970076062 A KR970076062 A KR 970076062A KR 1019960015562 A KR1019960015562 A KR 1019960015562A KR 19960015562 A KR19960015562 A KR 19960015562A KR 970076062 A KR970076062 A KR 970076062A
Authority
KR
South Korea
Prior art keywords
film
sio
pattern
stopper
phase shift
Prior art date
Application number
KR1019960015562A
Other languages
Korean (ko)
Inventor
계종욱
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960015562A priority Critical patent/KR970076062A/en
Priority to JP28106696A priority patent/JPH09146258A/en
Priority to TW085113260A priority patent/TW306984B/zh
Publication of KR970076062A publication Critical patent/KR970076062A/en

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Abstract

본 발명은 위상 반전 마스크의 제조 방법에 관한 것으로, 본 발명에서는 레벤슨형 위상 반전 마스크를 제조하기 위하여 투명한 포토마스크 기판상에 소정 패턴의 크롬막을 형성하여 차광 영역과 투광영역을 한정하는 단계와, 상기 결과물상에 SiO2를 증착하여 SiO2막을 형성하는 단계와, 상기 SiO2막에 대하여 상기 크롬막을 스토퍼(stopper)로 하여 평탄화 공정을 행하여 SiO2막 패턴을 형성하는 단계와, 상기 결과물에 대하여 패터닝을 하여 상기 SiO2막 패턴을 선택적으로 제거하는 단계를 포함한다. 본 발명에 의하면, 레벤슨형의 위상 반전 마스크의 제작시에 패턴이 변형되는 문제를 해결할 수 있다.The present invention relates to a method of fabricating a phase shift mask, in which a chromium film of a predetermined pattern is formed on a transparent photomask substrate to form a Levenson type phase shift mask, thereby defining a light shielding region and a light transmitting region, a step of performing a flattening process by the chromium film as a stopper (stopper) to form a SiO 2 film pattern for forming the vapor-deposited SiO 2 on the resultant SiO 2 film, the SiO 2 film, with respect to the output And selectively removing the SiO 2 film pattern by patterning. According to the present invention, it is possible to solve the problem that the pattern is deformed at the time of manufacturing the Levenson type phase shift mask.

Description

위상 반전 마스크의 제조 방법Method of manufacturing phase inversion mask

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제7도는 본 발명에 따라 위상 반전 마스크를 제조하는 방법을 설명하기 위한 도면이다.7 is a view for explaining a method of manufacturing a phase shift mask according to the present invention.

Claims (2)

투명한 포토마스크 기판상에 소정 패턴의 크롬막을 형성하여 차광 영역과 투광 영역을 한정하는 단계와, 상기 결과물상에 SiO2를 증착하여 SiO2막을 형성하는 단계와, 상기 SiO2막에 대하여 상기 크롬막을 스토퍼(stopper)로 하여 평탄화 공정을 행하여 SiO2막 패턴을 형성하는 단계와, 상기 결과물에 대하여 패터닝을 하여 상기 SiO2막 패턴을 선택적으로 제거하는 단계를 포함하는 것을 특징으로 하는 위상 반전 마스크의 제조방법.Transparent photomask comprising the steps of: defining a shielding area and the transmissive area is formed a chromium film having a predetermined pattern onto the substrate; and the chromium film stopper with respect to the SiO 2 film forming the resultant by depositing SiO2 on the SiO 2 film forming a SiO 2 film pattern by performing a planarization process on the SiO 2 film pattern as a stopper; and selectively removing the SiO 2 film pattern by patterning the resultant film. . 제1항에 있어서, 상기 크롬막은 상기 SiO2막 패턴의 180°위상에 해당하는 두께로 형성하는 것을 특징으로 하는 위상 반전 마스크의 제조방법.The method according to claim 1, wherein the chromium film is formed to have a thickness corresponding to a 180-degree phase of the SiO 2 film pattern. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960015562A 1995-10-31 1996-05-11 Method of manufacturing phase inversion mask KR970076062A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019960015562A KR970076062A (en) 1996-05-11 1996-05-11 Method of manufacturing phase inversion mask
JP28106696A JPH09146258A (en) 1995-10-31 1996-10-23 Manufacture of phase inversion mask
TW085113260A TW306984B (en) 1995-10-31 1996-10-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960015562A KR970076062A (en) 1996-05-11 1996-05-11 Method of manufacturing phase inversion mask

Publications (1)

Publication Number Publication Date
KR970076062A true KR970076062A (en) 1997-12-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960015562A KR970076062A (en) 1995-10-31 1996-05-11 Method of manufacturing phase inversion mask

Country Status (1)

Country Link
KR (1) KR970076062A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000020831A (en) * 1998-09-24 2000-04-15 전주범 Method for manufacturing phase inversion mask
KR100294646B1 (en) * 1998-06-30 2001-08-07 박종섭 Phase inversion mask
KR20020089195A (en) * 2001-05-22 2002-11-29 닛본 덴기 가부시끼가이샤 Phase-shifting mask and method of fabricating the same
KR100388320B1 (en) * 1999-06-22 2003-06-25 주식회사 하이닉스반도체 Forming method for phase shift mask

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100294646B1 (en) * 1998-06-30 2001-08-07 박종섭 Phase inversion mask
KR20000020831A (en) * 1998-09-24 2000-04-15 전주범 Method for manufacturing phase inversion mask
KR100388320B1 (en) * 1999-06-22 2003-06-25 주식회사 하이닉스반도체 Forming method for phase shift mask
KR20020089195A (en) * 2001-05-22 2002-11-29 닛본 덴기 가부시끼가이샤 Phase-shifting mask and method of fabricating the same

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