KR970076062A - Method of manufacturing phase inversion mask - Google Patents
Method of manufacturing phase inversion mask Download PDFInfo
- Publication number
- KR970076062A KR970076062A KR1019960015562A KR19960015562A KR970076062A KR 970076062 A KR970076062 A KR 970076062A KR 1019960015562 A KR1019960015562 A KR 1019960015562A KR 19960015562 A KR19960015562 A KR 19960015562A KR 970076062 A KR970076062 A KR 970076062A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- sio
- pattern
- stopper
- phase shift
- Prior art date
Links
Abstract
본 발명은 위상 반전 마스크의 제조 방법에 관한 것으로, 본 발명에서는 레벤슨형 위상 반전 마스크를 제조하기 위하여 투명한 포토마스크 기판상에 소정 패턴의 크롬막을 형성하여 차광 영역과 투광영역을 한정하는 단계와, 상기 결과물상에 SiO2를 증착하여 SiO2막을 형성하는 단계와, 상기 SiO2막에 대하여 상기 크롬막을 스토퍼(stopper)로 하여 평탄화 공정을 행하여 SiO2막 패턴을 형성하는 단계와, 상기 결과물에 대하여 패터닝을 하여 상기 SiO2막 패턴을 선택적으로 제거하는 단계를 포함한다. 본 발명에 의하면, 레벤슨형의 위상 반전 마스크의 제작시에 패턴이 변형되는 문제를 해결할 수 있다.The present invention relates to a method of fabricating a phase shift mask, in which a chromium film of a predetermined pattern is formed on a transparent photomask substrate to form a Levenson type phase shift mask, thereby defining a light shielding region and a light transmitting region, a step of performing a flattening process by the chromium film as a stopper (stopper) to form a SiO 2 film pattern for forming the vapor-deposited SiO 2 on the resultant SiO 2 film, the SiO 2 film, with respect to the output And selectively removing the SiO 2 film pattern by patterning. According to the present invention, it is possible to solve the problem that the pattern is deformed at the time of manufacturing the Levenson type phase shift mask.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제7도는 본 발명에 따라 위상 반전 마스크를 제조하는 방법을 설명하기 위한 도면이다.7 is a view for explaining a method of manufacturing a phase shift mask according to the present invention.
Claims (2)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960015562A KR970076062A (en) | 1996-05-11 | 1996-05-11 | Method of manufacturing phase inversion mask |
JP28106696A JPH09146258A (en) | 1995-10-31 | 1996-10-23 | Manufacture of phase inversion mask |
TW085113260A TW306984B (en) | 1995-10-31 | 1996-10-30 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960015562A KR970076062A (en) | 1996-05-11 | 1996-05-11 | Method of manufacturing phase inversion mask |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970076062A true KR970076062A (en) | 1997-12-10 |
Family
ID=66219995
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960015562A KR970076062A (en) | 1995-10-31 | 1996-05-11 | Method of manufacturing phase inversion mask |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970076062A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000020831A (en) * | 1998-09-24 | 2000-04-15 | 전주범 | Method for manufacturing phase inversion mask |
KR100294646B1 (en) * | 1998-06-30 | 2001-08-07 | 박종섭 | Phase inversion mask |
KR20020089195A (en) * | 2001-05-22 | 2002-11-29 | 닛본 덴기 가부시끼가이샤 | Phase-shifting mask and method of fabricating the same |
KR100388320B1 (en) * | 1999-06-22 | 2003-06-25 | 주식회사 하이닉스반도체 | Forming method for phase shift mask |
-
1996
- 1996-05-11 KR KR1019960015562A patent/KR970076062A/en not_active Application Discontinuation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100294646B1 (en) * | 1998-06-30 | 2001-08-07 | 박종섭 | Phase inversion mask |
KR20000020831A (en) * | 1998-09-24 | 2000-04-15 | 전주범 | Method for manufacturing phase inversion mask |
KR100388320B1 (en) * | 1999-06-22 | 2003-06-25 | 주식회사 하이닉스반도체 | Forming method for phase shift mask |
KR20020089195A (en) * | 2001-05-22 | 2002-11-29 | 닛본 덴기 가부시끼가이샤 | Phase-shifting mask and method of fabricating the same |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
WITB | Written withdrawal of application |