KR940001290A - Phase reversal mask and manufacturing method - Google Patents

Phase reversal mask and manufacturing method Download PDF

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Publication number
KR940001290A
KR940001290A KR1019920010068A KR920010068A KR940001290A KR 940001290 A KR940001290 A KR 940001290A KR 1019920010068 A KR1019920010068 A KR 1019920010068A KR 920010068 A KR920010068 A KR 920010068A KR 940001290 A KR940001290 A KR 940001290A
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KR
South Korea
Prior art keywords
substrate
light
shielding film
light transmitting
light shielding
Prior art date
Application number
KR1019920010068A
Other languages
Korean (ko)
Other versions
KR950005441B1 (en
Inventor
김진민
Original Assignee
김광호
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자주식회사 filed Critical 김광호
Priority to KR1019920010068A priority Critical patent/KR950005441B1/en
Publication of KR940001290A publication Critical patent/KR940001290A/en
Application granted granted Critical
Publication of KR950005441B1 publication Critical patent/KR950005441B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 위상반전마스크 및 그 제조방법에 관한 것이다.The present invention relates to a phase inversion mask and a method of manufacturing the same.

본 발명에 의하면 노출광에 대하여 투명한 기판과, 이 기판위에 형성된 소정의 형상으로 패터닝된 차광막, 상기 차광막의 패터닝에 의해 상기 기판위에 형성되는 주광투과부와 최외각의 차광막에 형성된 보조광투과부, 상기 보조광투과부 그리고 하나씩 거른 주광투과부상에 형성되어 위상을 반전시키는 시프터를 구비하여 구성된 것을 특징으로 하는 위상반전마스크가 제공된다.According to the present invention, a substrate transparent to exposure light, a light shielding film patterned into a predetermined shape formed on the substrate, a main light transmitting portion formed on the substrate by patterning the light shielding film, an auxiliary light transmitting portion formed on the outermost light shielding film, and the auxiliary light transmitting portion In addition, a phase inversion mask is provided, comprising a shifter formed on the primary light transmitting portion filtered one by one to invert the phase.

따라서 최외각 패턴에서도 내부 패턴과 거의 동일한 해상력을 얻을 수 있게 되어 마스크패턴 전사(Transfer)의 정확도가 향상되게 된다.Therefore, even in the outermost pattern, a resolution almost identical to that of the inner pattern can be obtained, thereby improving the accuracy of the mask pattern transfer.

Description

위상반전마스크 및 그 제조방법Phase reversal mask and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3a도 및 제3b도는 본 발명의 위상반전마스크의 특성을 나타낸 도면.3a and 3b are views showing the characteristics of the phase inversion mask of the present invention.

제4a도 내지 제4c도는 본 발명에 의한 위상반전마스크의 제조방법을 도시한 단면도.4A to 4C are cross-sectional views showing a method of manufacturing a phase shift mask according to the present invention.

Claims (3)

노출광에 대하여 투명한 기판과, 이 기판위에 형성된 소정의 형상으로 패터닝된 차광막, 상기 차광막의 패터닝에 의해 상기 기판위에 형성되는 주고아투과부와 최외각의 차광막에 형성된 보조광투과부, 상기 보조광투과부 그리고 하나씩 거른 주광투과부상에 형성되어 위상을 반전시키는 시프터를 구비하여 구성된 것을 특징으로 하는 위상반전마스크.A substrate transparent to the exposure light, a light shielding film patterned into a predetermined shape formed on the substrate, a sub-transmitting part formed on the substrate by patterning the light shielding film, an auxiliary light transmitting part formed on the outermost light shielding film, the auxiliary light transmitting part, and one by one And a shifter formed on the main light transmitting portion to reverse the phase. 제1항에 있어서, 상기 보조광투과부의 크기는 이 보조광투과부를 통과한 빛에 의해 피가공재료가 패터닝되지 않을 정도의 크기임을 특징으로 하는 위상반전마스크.The phase shift mask according to claim 1, wherein the size of the auxiliary light transmitting part is such that the material to be processed is not patterned by the light passing through the auxiliary light transmitting part. 노출광에 대하여 투명한 기판상에 차광막을 형성한 후 기판의 보조 고아 투과부 및 주광투과부를 노출시키도록 패터닝하는 공정, 상기 패터닝된 차광막이 형성된 기판의 보조 광투과부 및 하나씩 거른 주 광투과부상에 시프터를 형성하는 공정을 구비하여 구성된 것을 특징으로 하는 위상반전마스크의 제조방법.Forming a light shielding film on the transparent substrate with respect to the exposure light, and then patterning the substrate to expose the auxiliary orphan transmission part and the main light transmission part of the substrate, and shifting the shifter on the auxiliary light transmission part of the substrate on which the patterned light shielding film is formed, A method of manufacturing a phase inversion mask comprising the step of forming. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920010068A 1992-06-10 1992-06-10 Phase shift mask and manufacturing method thereof KR950005441B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920010068A KR950005441B1 (en) 1992-06-10 1992-06-10 Phase shift mask and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920010068A KR950005441B1 (en) 1992-06-10 1992-06-10 Phase shift mask and manufacturing method thereof

Publications (2)

Publication Number Publication Date
KR940001290A true KR940001290A (en) 1994-01-11
KR950005441B1 KR950005441B1 (en) 1995-05-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920010068A KR950005441B1 (en) 1992-06-10 1992-06-10 Phase shift mask and manufacturing method thereof

Country Status (1)

Country Link
KR (1) KR950005441B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100424176B1 (en) * 2001-08-31 2004-03-24 주식회사 하이닉스반도체 Exposure mask for semiconductor manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100424176B1 (en) * 2001-08-31 2004-03-24 주식회사 하이닉스반도체 Exposure mask for semiconductor manufacture

Also Published As

Publication number Publication date
KR950005441B1 (en) 1995-05-24

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