KR970048978A - Photomask for Accurately Forming Photosensitive Layer Patterns in Manufacturing Semiconductor Memory Devices - Google Patents
Photomask for Accurately Forming Photosensitive Layer Patterns in Manufacturing Semiconductor Memory Devices Download PDFInfo
- Publication number
- KR970048978A KR970048978A KR1019950050893A KR19950050893A KR970048978A KR 970048978 A KR970048978 A KR 970048978A KR 1019950050893 A KR1019950050893 A KR 1019950050893A KR 19950050893 A KR19950050893 A KR 19950050893A KR 970048978 A KR970048978 A KR 970048978A
- Authority
- KR
- South Korea
- Prior art keywords
- photomask
- pattern
- forming
- semiconductor memory
- photosensitive layer
- Prior art date
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Abstract
본 발명은 메모리 셀을 형성하기 위한 패턴(41)과 주변 회로를 형성하기 위한 패턴을 구비하는 포토마스크에 있어서, 위치별 노광 강도를 일정하게 하기 위하여 상기 메모리 셀을 형성하기 위한 패턴의 경계지역을 따라 형성된 보조 패턴(42)을 구비하는 것을 특징으로 하는 반도체 메모리 소자 제조시 감광층 패턴을 정확하게 형성하기 위한 포토마스크에 관한 것으로, 감광층 패턴의 붕괴 현상을 방지할 수 있으며, 공정 안정화로 공정 진행 시간을 단축시킬 수 있고, 또한 재수행(rework)율을 감소시켜, 결국 제품의 제조 수율을 향상시킬 수 있도록 한 것이다.The present invention provides a photomask having a pattern 41 for forming a memory cell and a pattern for forming a peripheral circuit, wherein the boundary area of the pattern for forming the memory cell is defined in order to make the exposure intensity per position constant. The present invention relates to a photomask for accurately forming a photoresist layer pattern when fabricating a semiconductor memory device, comprising: an auxiliary pattern 42 formed according to the present invention. This can shorten the time and also reduce the rework rate, which in turn improves the production yield of the product.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제4도는 본 발명의 일실시예에 따른 블록 단위의 캐패시터 노드 패턴의 평면도.4 is a plan view of a capacitor node pattern in units of blocks according to an embodiment of the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050893A KR970048978A (en) | 1995-12-16 | 1995-12-16 | Photomask for Accurately Forming Photosensitive Layer Patterns in Manufacturing Semiconductor Memory Devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050893A KR970048978A (en) | 1995-12-16 | 1995-12-16 | Photomask for Accurately Forming Photosensitive Layer Patterns in Manufacturing Semiconductor Memory Devices |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970048978A true KR970048978A (en) | 1997-07-29 |
Family
ID=66595098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950050893A KR970048978A (en) | 1995-12-16 | 1995-12-16 | Photomask for Accurately Forming Photosensitive Layer Patterns in Manufacturing Semiconductor Memory Devices |
Country Status (1)
Country | Link |
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KR (1) | KR970048978A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020062810A (en) * | 2001-01-24 | 2002-07-31 | 닛본 덴기 가부시끼가이샤 | Electron beam projection mask |
KR100494683B1 (en) * | 2000-05-31 | 2005-06-13 | 비오이 하이디스 테크놀로지 주식회사 | Photo mask for half tone exposure process employing in tft-lcd manufacture process using 4-mask |
KR100568729B1 (en) * | 2004-12-02 | 2006-04-07 | 삼성전자주식회사 | Structure for protecting a region in which an overlay mark is formed, overlay mark having the structure and method of forming the overlay mark |
-
1995
- 1995-12-16 KR KR1019950050893A patent/KR970048978A/en not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100494683B1 (en) * | 2000-05-31 | 2005-06-13 | 비오이 하이디스 테크놀로지 주식회사 | Photo mask for half tone exposure process employing in tft-lcd manufacture process using 4-mask |
KR20020062810A (en) * | 2001-01-24 | 2002-07-31 | 닛본 덴기 가부시끼가이샤 | Electron beam projection mask |
KR100568729B1 (en) * | 2004-12-02 | 2006-04-07 | 삼성전자주식회사 | Structure for protecting a region in which an overlay mark is formed, overlay mark having the structure and method of forming the overlay mark |
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