KR970048978A - Photomask for Accurately Forming Photosensitive Layer Patterns in Manufacturing Semiconductor Memory Devices - Google Patents

Photomask for Accurately Forming Photosensitive Layer Patterns in Manufacturing Semiconductor Memory Devices Download PDF

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Publication number
KR970048978A
KR970048978A KR1019950050893A KR19950050893A KR970048978A KR 970048978 A KR970048978 A KR 970048978A KR 1019950050893 A KR1019950050893 A KR 1019950050893A KR 19950050893 A KR19950050893 A KR 19950050893A KR 970048978 A KR970048978 A KR 970048978A
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KR
South Korea
Prior art keywords
photomask
pattern
forming
semiconductor memory
photosensitive layer
Prior art date
Application number
KR1019950050893A
Other languages
Korean (ko)
Inventor
문승찬
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950050893A priority Critical patent/KR970048978A/en
Publication of KR970048978A publication Critical patent/KR970048978A/en

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Abstract

본 발명은 메모리 셀을 형성하기 위한 패턴(41)과 주변 회로를 형성하기 위한 패턴을 구비하는 포토마스크에 있어서, 위치별 노광 강도를 일정하게 하기 위하여 상기 메모리 셀을 형성하기 위한 패턴의 경계지역을 따라 형성된 보조 패턴(42)을 구비하는 것을 특징으로 하는 반도체 메모리 소자 제조시 감광층 패턴을 정확하게 형성하기 위한 포토마스크에 관한 것으로, 감광층 패턴의 붕괴 현상을 방지할 수 있으며, 공정 안정화로 공정 진행 시간을 단축시킬 수 있고, 또한 재수행(rework)율을 감소시켜, 결국 제품의 제조 수율을 향상시킬 수 있도록 한 것이다.The present invention provides a photomask having a pattern 41 for forming a memory cell and a pattern for forming a peripheral circuit, wherein the boundary area of the pattern for forming the memory cell is defined in order to make the exposure intensity per position constant. The present invention relates to a photomask for accurately forming a photoresist layer pattern when fabricating a semiconductor memory device, comprising: an auxiliary pattern 42 formed according to the present invention. This can shorten the time and also reduce the rework rate, which in turn improves the production yield of the product.

Description

반도체 메모리 소자 제조시 감광층 패턴을 정학하게 형성하기 위한 포토마스크Photomask for Accurately Forming Photosensitive Layer Patterns in Manufacturing Semiconductor Memory Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도는 본 발명의 일실시예에 따른 블록 단위의 캐패시터 노드 패턴의 평면도.4 is a plan view of a capacitor node pattern in units of blocks according to an embodiment of the present invention.

Claims (2)

메모리 셀을 형성하기 위한 패턴과 주변 회로를 형성하기 위한 패턴을 구비하는 포토마스크에 있어서, 위치별 노광 강도를 일정하게 하기 위하여 상기 메모리 셀을 형성하기 위한 패턴의 경계지역을 따라 형성된 보조 패턴을 구비하는 것을 특징으로 하는 반도체 메모리 소자 제조시 감광층 패턴을 정확하게 형성하기 위한 포토마스크.A photomask having a pattern for forming a memory cell and a pattern for forming a peripheral circuit, the photomask having an auxiliary pattern formed along a boundary area of the pattern for forming the memory cell in order to make the exposure intensity per position constant. A photomask for accurately forming the photosensitive layer pattern when manufacturing a semiconductor memory device, characterized in that. 제1항에 있어서, 상기 보조 패턴은 선형인 것을 특징으로 하는 반도체 메모리 소자 제조시 감광층 패턴을 정확하게 형성하기 위한 포토마스크.The photomask of claim 1, wherein the auxiliary pattern is linear. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950050893A 1995-12-16 1995-12-16 Photomask for Accurately Forming Photosensitive Layer Patterns in Manufacturing Semiconductor Memory Devices KR970048978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950050893A KR970048978A (en) 1995-12-16 1995-12-16 Photomask for Accurately Forming Photosensitive Layer Patterns in Manufacturing Semiconductor Memory Devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950050893A KR970048978A (en) 1995-12-16 1995-12-16 Photomask for Accurately Forming Photosensitive Layer Patterns in Manufacturing Semiconductor Memory Devices

Publications (1)

Publication Number Publication Date
KR970048978A true KR970048978A (en) 1997-07-29

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KR1019950050893A KR970048978A (en) 1995-12-16 1995-12-16 Photomask for Accurately Forming Photosensitive Layer Patterns in Manufacturing Semiconductor Memory Devices

Country Status (1)

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KR (1) KR970048978A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020062810A (en) * 2001-01-24 2002-07-31 닛본 덴기 가부시끼가이샤 Electron beam projection mask
KR100494683B1 (en) * 2000-05-31 2005-06-13 비오이 하이디스 테크놀로지 주식회사 Photo mask for half tone exposure process employing in tft-lcd manufacture process using 4-mask
KR100568729B1 (en) * 2004-12-02 2006-04-07 삼성전자주식회사 Structure for protecting a region in which an overlay mark is formed, overlay mark having the structure and method of forming the overlay mark

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100494683B1 (en) * 2000-05-31 2005-06-13 비오이 하이디스 테크놀로지 주식회사 Photo mask for half tone exposure process employing in tft-lcd manufacture process using 4-mask
KR20020062810A (en) * 2001-01-24 2002-07-31 닛본 덴기 가부시끼가이샤 Electron beam projection mask
KR100568729B1 (en) * 2004-12-02 2006-04-07 삼성전자주식회사 Structure for protecting a region in which an overlay mark is formed, overlay mark having the structure and method of forming the overlay mark

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