KR970022509A - Mask manufacturing method - Google Patents

Mask manufacturing method Download PDF

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Publication number
KR970022509A
KR970022509A KR1019950036444A KR19950036444A KR970022509A KR 970022509 A KR970022509 A KR 970022509A KR 1019950036444 A KR1019950036444 A KR 1019950036444A KR 19950036444 A KR19950036444 A KR 19950036444A KR 970022509 A KR970022509 A KR 970022509A
Authority
KR
South Korea
Prior art keywords
mask
fine pattern
mask manufacturing
manufacturing
master
Prior art date
Application number
KR1019950036444A
Other languages
Korean (ko)
Inventor
이중현
여기성
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950036444A priority Critical patent/KR970022509A/en
Publication of KR970022509A publication Critical patent/KR970022509A/en

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Abstract

고집적 반도체 장치에 필요한 미세 패턴을 가지는 마스크 제조방법에 관하여 개시한다. 본 발명은 미세 패턴을 가지는 마스크 제조 방법에 있어서, 상기 미세 패턴을 정해진 비율로 확대한 마스터 마스크를 형성하고, 상기 마스터 마스크를 축소 투영 방법으로 축소시키는 것을 특징으로 한다. 따라서, 본 발명의 마스크 제조 방법에 의해서 종래의 방법으로 형성할 수 있는 한계 이하의 미세 크기로 형성된 상기 칩 패턴을 가지는 마스크의 제작이 가능해졌다. 또한, 필요에 따라 한 마스크 내에 형성되는 칩 패턴의 개수를 조절할 수 있고, 하나의 마스크에 여러 개의 칩 패턴을 형성하는 경우 반도체 장치의 생산성을 증가시키는 효과를 가져온다.A mask manufacturing method having a fine pattern required for a highly integrated semiconductor device is disclosed. The present invention provides a mask manufacturing method having a fine pattern, wherein the master mask is formed by enlarging the fine pattern at a predetermined ratio, and the master mask is reduced by a reduction projection method. Therefore, the mask manufacturing method of the present invention enables the production of a mask having the chip pattern formed to a fine size below the limit that can be formed by the conventional method. In addition, if necessary, the number of chip patterns formed in one mask may be adjusted, and when a plurality of chip patterns are formed in one mask, the productivity of the semiconductor device may be increased.

Description

마스크 제조 방법Mask manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제4도는 본 발명에 의하여 미세 패턴을 가지는 마스크 제조 방법을 보여주는 도면들이다.4 is a view showing a mask manufacturing method having a fine pattern according to the present invention.

Claims (1)

미세 패턴을 가지는 마스크 제조 방법에 있어서, 상기 미세 패턴을 정해진 비율로 확대한 마스터 마스크를 형성하고, 상기 마스터 마스크를 축소 투영 방법으로 축소시키는 것을 특징으로 하는 마스크 제조 방법.A mask manufacturing method having a fine pattern, comprising: forming a master mask in which the fine pattern is enlarged at a predetermined ratio, and reducing the master mask by a reduction projection method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950036444A 1995-10-20 1995-10-20 Mask manufacturing method KR970022509A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950036444A KR970022509A (en) 1995-10-20 1995-10-20 Mask manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950036444A KR970022509A (en) 1995-10-20 1995-10-20 Mask manufacturing method

Publications (1)

Publication Number Publication Date
KR970022509A true KR970022509A (en) 1997-05-28

Family

ID=66584435

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950036444A KR970022509A (en) 1995-10-20 1995-10-20 Mask manufacturing method

Country Status (1)

Country Link
KR (1) KR970022509A (en)

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