KR970048937A - Mask for fine pattern formation - Google Patents

Mask for fine pattern formation Download PDF

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Publication number
KR970048937A
KR970048937A KR1019950066147A KR19950066147A KR970048937A KR 970048937 A KR970048937 A KR 970048937A KR 1019950066147 A KR1019950066147 A KR 1019950066147A KR 19950066147 A KR19950066147 A KR 19950066147A KR 970048937 A KR970048937 A KR 970048937A
Authority
KR
South Korea
Prior art keywords
mask
fine pattern
pattern formation
pattern used
chromium
Prior art date
Application number
KR1019950066147A
Other languages
Korean (ko)
Inventor
이일호
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950066147A priority Critical patent/KR970048937A/en
Publication of KR970048937A publication Critical patent/KR970048937A/en

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  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 반도체 제조공정에 사용되는 미세 패턴 형성용 마스크에 관한 것으로, 특히, 종래의 마스크에 광차단막으로 사용되는 크롬패턴의 두께를 조절하여 광 투과율을 조절하고 이를 이용하여 양질의 미세패턴을 형성하는 것이다.The present invention relates to a mask for forming a fine pattern used in a semiconductor manufacturing process, and in particular, to control the light transmittance by adjusting the thickness of the chromium pattern used as a light shielding film in a conventional mask to form a fine pattern using this It is.

Description

미세 패턴 형성용 마스크Mask for fine pattern formation

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도의 A 및 B는 본 발명에 의해 제조된 마스크를 이용하여 감광막 패턴을 형성하는 단계를 도시한 단면도.2A and 2B are cross-sectional views showing the steps of forming a photosensitive film pattern using a mask made by the present invention.

Claims (1)

투명기판에 광차단용 크롬패턴이 다수개 구비된 마스크에 있어서, 상기 크롬 패턴의 두께가 4 - 10%의 투과율을 갖도록 구비된 것을 특징으로 하는 미세 패턴 형성용 마스크.A mask having a plurality of chromium patterns for blocking light on a transparent substrate, wherein the thickness of the chromium pattern is provided to have a transmittance of 4-10%. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950066147A 1995-12-29 1995-12-29 Mask for fine pattern formation KR970048937A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950066147A KR970048937A (en) 1995-12-29 1995-12-29 Mask for fine pattern formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950066147A KR970048937A (en) 1995-12-29 1995-12-29 Mask for fine pattern formation

Publications (1)

Publication Number Publication Date
KR970048937A true KR970048937A (en) 1997-07-29

Family

ID=66637748

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950066147A KR970048937A (en) 1995-12-29 1995-12-29 Mask for fine pattern formation

Country Status (1)

Country Link
KR (1) KR970048937A (en)

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