KR980003787A - Storage electrode mask of semiconductor device - Google Patents

Storage electrode mask of semiconductor device Download PDF

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Publication number
KR980003787A
KR980003787A KR1019960023210A KR19960023210A KR980003787A KR 980003787 A KR980003787 A KR 980003787A KR 1019960023210 A KR1019960023210 A KR 1019960023210A KR 19960023210 A KR19960023210 A KR 19960023210A KR 980003787 A KR980003787 A KR 980003787A
Authority
KR
South Korea
Prior art keywords
storage electrode
electrode mask
semiconductor device
island
mask
Prior art date
Application number
KR1019960023210A
Other languages
Korean (ko)
Inventor
권원택
양성우
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960023210A priority Critical patent/KR980003787A/en
Publication of KR980003787A publication Critical patent/KR980003787A/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Abstract

본 발명은 반도체소자의 저장전극마스크에 관한 것으로, 반도체기판 접속되는 저장전극을 형성하기 위하여 디자인하는 섬형태의 저장전극마스크에 있어서, 상기 섬형태의 저장전극마스크 바깥쪽에 요철을 구비하는 저장전극마스크를 형성함으로써 이를 이용하여 후속공정으로 표면적이 증가된 저장전극을 형성하여 반도체소자의 고집적화에 충분한 정전용량을 갖는 캐패시터를 형성하여 반도체소자의 특성, 신뢰성 및 생산성을 향상시키고 그에 따른 반도체소자의 고집적화를 가능하게 하는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a storage electrode mask of a semiconductor device, comprising: an island-type storage electrode mask designed to form a storage electrode connected to a semiconductor substrate, wherein the storage electrode mask has irregularities outside the island-type storage electrode mask. By using this to form a storage electrode having an increased surface area in the subsequent process to form a capacitor having a capacitance sufficient for high integration of the semiconductor device to improve the characteristics, reliability and productivity of the semiconductor device and thereby high integration of the semiconductor device It is a technology that makes it possible.

Description

반도체 소자의 저장전극 마스크Storage electrode mask of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 실시예에 따른 반도체소자의 저장전극 마스크를 도시한 평면도.2 is a plan view showing a storage electrode mask of a semiconductor device according to an embodiment of the present invention.

Claims (5)

반도체기판 접속되는 저장전극을 형성하기 위하여 디자인하는 섬형태의 저장전극마스크에 있어서, 상기 섬형태의 저장전극마스크 바깥쪽에 요철이 구비되는 것을 특징으로 하는 반도체 소자의 저장전극마스크.An island-type storage electrode mask designed to form a storage electrode to be connected to a semiconductor substrate, wherein the storage electrode mask of the semiconductor device is provided with irregularities outside the island-type storage electrode mask. 제1항에 있어서, 상기 섬형태의 저장전극마스크는 0.5~0.2㎛×1~2㎛ 정도의 크기로 형성되는 것을 특징으로 하는 반도체소자의 저장전극마스크.The storage electrode mask of claim 1, wherein the island-type storage electrode mask has a size of about 0.5 to 0.2 μm × 1 to 2 μm. 제1항에 있어서, 상기 요철은 상기 요부로부터 상기 철부까지 0.15~0.25㎛의 높이로 형성되는 것을 특징으로 하는 반도체소자의 저장전극마스크.The storage electrode mask of claim 1, wherein the unevenness is formed at a height of 0.15 to 0.25 μm from the uneven portion to the uneven portion. 제1항에 있어서, 상기 요철은 상기 철부와 철부 사이의 피치를 0.15~0.25㎛ 정도로 하는 것을 특징으로 하는 반도체소자의 저장전극마스크.The storage electrode mask of claim 1, wherein the unevenness is about 0.15 to 0.25 μm in pitch between the convex portion and the convex portion. 제1항에 있어서, 상기 요철은 상기 철부와 철부 사이에 형성된 요부를 85°~95°의 각도로 형성하는 것을 특징으로 하는 반도체소자의 저장전극마스크.The storage electrode mask of claim 1, wherein the unevenness forms a uneven portion formed between the convex portion and the convex portion at an angle of 85 ° to 95 °. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960023210A 1996-06-24 1996-06-24 Storage electrode mask of semiconductor device KR980003787A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960023210A KR980003787A (en) 1996-06-24 1996-06-24 Storage electrode mask of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960023210A KR980003787A (en) 1996-06-24 1996-06-24 Storage electrode mask of semiconductor device

Publications (1)

Publication Number Publication Date
KR980003787A true KR980003787A (en) 1998-03-30

Family

ID=66287833

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960023210A KR980003787A (en) 1996-06-24 1996-06-24 Storage electrode mask of semiconductor device

Country Status (1)

Country Link
KR (1) KR980003787A (en)

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