KR970018656A - Method for manufacturing semiconductor device having non-flat semiconductor substrate - Google Patents
Method for manufacturing semiconductor device having non-flat semiconductor substrate Download PDFInfo
- Publication number
- KR970018656A KR970018656A KR1019950031359A KR19950031359A KR970018656A KR 970018656 A KR970018656 A KR 970018656A KR 1019950031359 A KR1019950031359 A KR 1019950031359A KR 19950031359 A KR19950031359 A KR 19950031359A KR 970018656 A KR970018656 A KR 970018656A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor substrate
- insulating film
- oxide film
- manufacturing
- pattern
- Prior art date
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- Formation Of Insulating Films (AREA)
Abstract
본 발명은 반도체장치의 제조방법, 특히 표면이 굴곡진 반도체기판의 제조방법에 관한 것으로서, 그 제조방법은 표면이 평탄한 반도체기판(10)상에 소정패턴의 절연막을 형성하는 공정과; 상기 절연막을 마스크로 사용하여 상기 절연막의 패턴들사이에 있는 노출된 반도체기판(10)상에 산화막(14)을 형성하는 공정과; 상기 절연막과 상기 산화막(14)을 제거하여 표면이 굴곡진 반도체기판(11A)을 형성하는 공정을 포함한다. 본 발명의 반도체장치는 표면이 굴곡진 반도체기판(10A)을 사용하고 있기 때문에, 평탄한 반도체기판(10)을 사용하는 것보다 상대적으로 큰 길이와 폭을 갖는 소자가 제조될 수 있다. 따라서, 실질적인 소자패턴의 설계에 있어서 그 패턴의 크기보다도 더욱 큰 패턴을 갖는 소자가 반도체기판상에 형성될 수 있어서, 그 장치의 내압을 유지할 수 있을 뿐만 아니라 그 설계면적의 감소효과가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, particularly a method of manufacturing a curved semiconductor substrate, the method comprising: forming an insulating film of a predetermined pattern on a semiconductor substrate 10 having a flat surface; Forming an oxide film (14) on the exposed semiconductor substrate (10) between the patterns of the insulating film by using the insulating film as a mask; And removing the insulating film and the oxide film 14 to form a curved semiconductor substrate 11A. Since the semiconductor device of the present invention uses the curved semiconductor substrate 10A, a device having a relatively large length and width can be manufactured than using the flat semiconductor substrate 10. Therefore, in designing a substantial element pattern, an element having a pattern larger than the size of the pattern can be formed on the semiconductor substrate, so that the breakdown voltage of the device can be maintained and the design area can be reduced.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명의 실시예에 따라 제조된 반도체장치의 부분적 구조를 보여주는 단면도2 is a cross-sectional view showing a partial structure of a semiconductor device manufactured according to an embodiment of the present invention.
제3A도 내지 제3G도는 발명의 실시예에 따른 반도체장치의 제조방법의 제조공정들을 보여주는 단면도3A to 3G are cross-sectional views showing manufacturing processes of a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950031359A KR970018656A (en) | 1995-09-22 | 1995-09-22 | Method for manufacturing semiconductor device having non-flat semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950031359A KR970018656A (en) | 1995-09-22 | 1995-09-22 | Method for manufacturing semiconductor device having non-flat semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970018656A true KR970018656A (en) | 1997-04-30 |
Family
ID=66616244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950031359A KR970018656A (en) | 1995-09-22 | 1995-09-22 | Method for manufacturing semiconductor device having non-flat semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970018656A (en) |
-
1995
- 1995-09-22 KR KR1019950031359A patent/KR970018656A/en not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Withdrawal due to no request for examination |