KR980006560A - Storage electrode mask of semiconductor device - Google Patents

Storage electrode mask of semiconductor device Download PDF

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Publication number
KR980006560A
KR980006560A KR1019960023248A KR19960023248A KR980006560A KR 980006560 A KR980006560 A KR 980006560A KR 1019960023248 A KR1019960023248 A KR 1019960023248A KR 19960023248 A KR19960023248 A KR 19960023248A KR 980006560 A KR980006560 A KR 980006560A
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KR
South Korea
Prior art keywords
storage electrode
electrode mask
mask
semiconductor device
storage
Prior art date
Application number
KR1019960023248A
Other languages
Korean (ko)
Inventor
복철규
Original Assignee
김주용
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR1019960023248A priority Critical patent/KR980006560A/en
Publication of KR980006560A publication Critical patent/KR980006560A/en

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  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은 반도체소자의 저장전극마스크에 관한 것으로, 반도체기판 접속되는 저장전극을 형성하기 위하여 디자인하는 직사각형의 섬형태 저정전극마스크에 있어서, 상기 직사각형 섬형태를 갖는 하나의 저장 전극마스크 장축 양측에 요부가 형성되고, 상기 하나의 저장전극마스크 장축에 이웃하는 다른 저장전극마스크 장축 양측에 철부가 형성된 저정전극마스크를 형성한 다음, 상기 저정전극마스크를 이용한 후속공정으로 표면적이 증가된 저장전극을 형성하여 반도체소자의 고집적화에 충분한 정전용량을 갖는 캐패시터를 형성함으로써 반도체소자의 특성 및 신뢰성을 향상시키고 그에 따른 반도체소자의 고집적화를 가능하게 하는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a storage electrode mask of a semiconductor device, comprising: a rectangular island type low electrode mask designed to form a storage electrode connected to a semiconductor substrate, the main portion of which is formed on both sides of one storage electrode mask having a rectangular island shape; And a low electrode mask having convex portions formed at both sides of the other storage electrode mask long axis adjacent to the long storage axis of the one storage electrode mask, and then forming a storage electrode having an increased surface area in a subsequent process using the low electrode mask. By forming a capacitor having a capacitance sufficient for high integration of the semiconductor device is a technology that improves the characteristics and reliability of the semiconductor device, thereby enabling a high integration of the semiconductor device.

Description

반도체소자의 저장전극 마스크Storage electrode mask of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2a도 및 제2b도는 본 발명의 실시예에 따른 반도체소자의 저장전극 마스크를 도시한 개략도.2A and 2B are schematic views showing a storage electrode mask of a semiconductor device according to an embodiment of the present invention.

Claims (5)

반도체기판 접속되는 저장전극을 형성하기 위하여 디자인하는 직사각형의 섬형태 저장전극마스크에 있어서, 상기 직사각형 섬형태를 갖는 하나의 저장전극마스크 장축 양측에 요부가 형성되고, 상기 하나의 저정전극마스크 장축에 이웃하는 다른 저장전극마스크 장축 양측에 철부가 형성되는 것을 특징으로 하는 반도체소자의 저장전극마스크.In a rectangular island-type storage electrode mask designed to form a storage electrode connected to a semiconductor substrate, recesses are formed on both sides of one storage electrode mask long axis having the rectangular island shape, and adjacent to the single long electrode mask long axis. The storage electrode mask of the semiconductor device, characterized in that the convex portions are formed on both sides of the long axis of the other storage electrode mask. 제1항에 있어서, 상기 하나의 저장전극마스크에 형성되는 요부와 요부의 거리는 저장전극콘택홀보다 크게 형성되는 것을 특징으로 하는 반도체소자의 저장전극마스크.The storage electrode mask of claim 1, wherein a distance between the recess portion and the recess portion formed in the storage electrode mask is greater than that of the storage electrode contact hole. 제1항에 있어서, 상기 하나의 저장전극마스크에 형성되는 철부와 철부의 거리는 저장전극콘택홀 보다 크게 형성되는 것을 특징으로 하는 반도체소자의 저장전극마스크.The storage electrode mask of claim 1, wherein a distance between the convex portion and the convex portion formed in the one storage electrode mask is greater than that of the storage electrode contact hole. 제1항에 있어서, 상기 저장전극마스크는 투명기판 상부에 차광패턴을 이용하여 형성되는 것을 특징으로 하는 반도체소자의 저장전극마스크.The storage electrode mask of claim 1, wherein the storage electrode mask is formed on a transparent substrate using a light shielding pattern. 제1항에 있어서, 상기 저정전극마스크는 위상반전물질을 이용하여 형성되는 것을 특징으로 하는 반도체소자의 저정전극마스크.The low electrode mask of claim 1, wherein the low electrode electrode mask is formed using a phase inversion material.
KR1019960023248A 1996-06-24 1996-06-24 Storage electrode mask of semiconductor device KR980006560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960023248A KR980006560A (en) 1996-06-24 1996-06-24 Storage electrode mask of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960023248A KR980006560A (en) 1996-06-24 1996-06-24 Storage electrode mask of semiconductor device

Publications (1)

Publication Number Publication Date
KR980006560A true KR980006560A (en) 1998-03-30

Family

ID=66288336

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960023248A KR980006560A (en) 1996-06-24 1996-06-24 Storage electrode mask of semiconductor device

Country Status (1)

Country Link
KR (1) KR980006560A (en)

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