KR980006560A - Storage electrode mask of semiconductor device - Google Patents
Storage electrode mask of semiconductor device Download PDFInfo
- Publication number
- KR980006560A KR980006560A KR1019960023248A KR19960023248A KR980006560A KR 980006560 A KR980006560 A KR 980006560A KR 1019960023248 A KR1019960023248 A KR 1019960023248A KR 19960023248 A KR19960023248 A KR 19960023248A KR 980006560 A KR980006560 A KR 980006560A
- Authority
- KR
- South Korea
- Prior art keywords
- storage electrode
- electrode mask
- mask
- semiconductor device
- storage
- Prior art date
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- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
본 발명은 반도체소자의 저장전극마스크에 관한 것으로, 반도체기판 접속되는 저장전극을 형성하기 위하여 디자인하는 직사각형의 섬형태 저정전극마스크에 있어서, 상기 직사각형 섬형태를 갖는 하나의 저장 전극마스크 장축 양측에 요부가 형성되고, 상기 하나의 저장전극마스크 장축에 이웃하는 다른 저장전극마스크 장축 양측에 철부가 형성된 저정전극마스크를 형성한 다음, 상기 저정전극마스크를 이용한 후속공정으로 표면적이 증가된 저장전극을 형성하여 반도체소자의 고집적화에 충분한 정전용량을 갖는 캐패시터를 형성함으로써 반도체소자의 특성 및 신뢰성을 향상시키고 그에 따른 반도체소자의 고집적화를 가능하게 하는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a storage electrode mask of a semiconductor device, comprising: a rectangular island type low electrode mask designed to form a storage electrode connected to a semiconductor substrate, the main portion of which is formed on both sides of one storage electrode mask having a rectangular island shape; And a low electrode mask having convex portions formed at both sides of the other storage electrode mask long axis adjacent to the long storage axis of the one storage electrode mask, and then forming a storage electrode having an increased surface area in a subsequent process using the low electrode mask. By forming a capacitor having a capacitance sufficient for high integration of the semiconductor device is a technology that improves the characteristics and reliability of the semiconductor device, thereby enabling a high integration of the semiconductor device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2a도 및 제2b도는 본 발명의 실시예에 따른 반도체소자의 저장전극 마스크를 도시한 개략도.2A and 2B are schematic views showing a storage electrode mask of a semiconductor device according to an embodiment of the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960023248A KR980006560A (en) | 1996-06-24 | 1996-06-24 | Storage electrode mask of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960023248A KR980006560A (en) | 1996-06-24 | 1996-06-24 | Storage electrode mask of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR980006560A true KR980006560A (en) | 1998-03-30 |
Family
ID=66288336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960023248A KR980006560A (en) | 1996-06-24 | 1996-06-24 | Storage electrode mask of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR980006560A (en) |
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1996
- 1996-06-24 KR KR1019960023248A patent/KR980006560A/en not_active Application Discontinuation
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |