KR970076067A - Proximity effect improvement mask for semiconductor device manufacturing - Google Patents
Proximity effect improvement mask for semiconductor device manufacturing Download PDFInfo
- Publication number
- KR970076067A KR970076067A KR1019960015574A KR19960015574A KR970076067A KR 970076067 A KR970076067 A KR 970076067A KR 1019960015574 A KR1019960015574 A KR 1019960015574A KR 19960015574 A KR19960015574 A KR 19960015574A KR 970076067 A KR970076067 A KR 970076067A
- Authority
- KR
- South Korea
- Prior art keywords
- proximity effect
- mask
- semiconductor device
- device manufacturing
- effect improvement
- Prior art date
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
직사각형 패턴의 근접효과를 개선할 수 있는 마스크에 관하여 개시한다. 본 발명은, 마스크 기판과, 상기 마스크 기판 상에 형성된 직사각형의 패턴과, 상기 직사각형 패턴의 모서리에 근접효과의 발생을 억제시키기 위해 형성된 위상반전층을 포함하는 것을 특징으로 하는 마스크를 제공한다. 본 발명은 마스크 패턴의 모서리에 근접효과를 개선하는 위상반전층을 형성하여 반도체 장치의 공정마진을 증가시킬 수 있다.A mask capable of improving the proximity effect of a rectangular pattern is disclosed. The present invention provides a mask including a mask substrate, a rectangular pattern formed on the mask substrate, and a phase reversal layer formed to suppress the occurrence of a proximity effect at an edge of the rectangular pattern. The present invention can increase the process margin of the semiconductor device by forming a phase inversion layer which improves the proximity effect to the edge of the mask pattern.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제4도는 본 발명에 의하여 직사각형 패턴을 갖는 근접효과 개선마스크를 도시한 평면도이다.FIG. 4 is a plan view showing a proximity effect improving mask having a rectangular pattern according to the present invention.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960015574A KR970076067A (en) | 1996-05-11 | 1996-05-11 | Proximity effect improvement mask for semiconductor device manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960015574A KR970076067A (en) | 1996-05-11 | 1996-05-11 | Proximity effect improvement mask for semiconductor device manufacturing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970076067A true KR970076067A (en) | 1997-12-10 |
Family
ID=66220000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960015574A KR970076067A (en) | 1996-05-11 | 1996-05-11 | Proximity effect improvement mask for semiconductor device manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970076067A (en) |
-
1996
- 1996-05-11 KR KR1019960015574A patent/KR970076067A/en not_active Application Discontinuation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR970076067A (en) | Proximity effect improvement mask for semiconductor device manufacturing | |
| KR970008372A (en) | Fine Pattern Formation Method of Semiconductor Device | |
| KR960036131A (en) | Field effect type semiconductor device and manufacturing method thereof | |
| KR970076066A (en) | Proximity effect improvement mask for semiconductor device manufacturing | |
| KR970052360A (en) | Small contact hole formation method of semiconductor device using rim type phase inversion mask | |
| KR940016472A (en) | Overlap margin improvement method by changing the design technique of semiconductor device | |
| KR980005380A (en) | How to create alignment marks | |
| KR970076065A (en) | Method of manufacturing phase inversion mask | |
| KR970028810A (en) | Photomask with Phase Reversed Region | |
| KR980003801A (en) | Phase inversion mask | |
| KR970071120A (en) | Exposure Mask | |
| KR970018124A (en) | How to form a fine pattern | |
| KR970017954A (en) | Pattern Forming Method of Semiconductor Device | |
| KR950004405A (en) | Semiconductor device having pad electrode and method for forming same | |
| KR970048925A (en) | Masks used in the manufacture of semiconductor devices | |
| KR950012752A (en) | Method for forming semiconductor device and device therefor | |
| KR950027967A (en) | How to make photomask | |
| KR960026269A (en) | Reticle pattern | |
| KR970028809A (en) | Phase reversal mask used in the manufacture of semiconductor devices | |
| KR970018192A (en) | Semiconductor Etching Device with Anode Electrode | |
| KR970059832A (en) | Structure of photomask | |
| KR910005099A (en) | Formation of contact phase | |
| KR970077088A (en) | How to create overlay vernier key | |
| KR920010823A (en) | Field oxide film formation method | |
| KR970023756A (en) | Spacer Formation Method of Semiconductor Device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Withdrawal due to no request for examination |