KR970018192A - Semiconductor Etching Device with Anode Electrode - Google Patents

Semiconductor Etching Device with Anode Electrode Download PDF

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Publication number
KR970018192A
KR970018192A KR1019950029508A KR19950029508A KR970018192A KR 970018192 A KR970018192 A KR 970018192A KR 1019950029508 A KR1019950029508 A KR 1019950029508A KR 19950029508 A KR19950029508 A KR 19950029508A KR 970018192 A KR970018192 A KR 970018192A
Authority
KR
South Korea
Prior art keywords
anode electrode
semiconductor etching
etching apparatus
etching device
semiconductor
Prior art date
Application number
KR1019950029508A
Other languages
Korean (ko)
Inventor
황재성
이주성
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950029508A priority Critical patent/KR970018192A/en
Publication of KR970018192A publication Critical patent/KR970018192A/en

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Abstract

어노우드 전극을 갖는 반도체 식각장치가 개시되어 있다. 본 발명은 반도체 식각장치에 있어서, 가장자리에 알루미늄 산화막이 형성된 홈을 갖는 어노우드 전극을 구비하여, 상기 어노우드 전극의 중앙부분에 웨이퍼를 올려놓고 식각 공정을 실시하기 위하여 플라즈마를 형성시킬 때 상기 어노우드 전극이 노출되지 않도록 함으로써, 다중합체의 발생을 억제시키는 것을 특징으로 하는 반도체 식각장치를 제공한다.A semiconductor etching apparatus having an anode electrode is disclosed. The present invention provides a semiconductor etching apparatus comprising an anode electrode having a groove having an aluminum oxide film formed at an edge thereof, and placing the wafer on the center portion of the anode wood and forming a plasma to perform an etching process. By preventing the wood electrode from being exposed, there is provided a semiconductor etching apparatus characterized by suppressing the generation of the polypolymer.

Description

어노우드(Anode) 전극을 갖는 반도체 식각장치Semiconductor Etching Device with Anode Electrode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의한 어노우드 전극을 도시한 단면도이다.2 is a cross-sectional view showing an anode electrode according to the present invention.

Claims (1)

반도체 식각장치에 있어서, 가장자리에 알루미늄 산화막이 형성된 홈을 갖는 어노우드 전극을 구비하여, 상기 어노우드 전극의 중앙부분에 웨이퍼를 올려놓고 식각 공정을 실시하기 위하여 플라즈마를 형성시킬 때 상기 어노우드 전극이 노출되지 않도록 함으로써, 다중합체의 발생을 억제시키는 것을 특징으로 하는 반도체 식각장치.A semiconductor etching apparatus comprising an anode electrode having a groove having an aluminum oxide film formed at an edge thereof, wherein the anode electrode is placed on a center portion of the anode electrode to form a plasma to perform an etching process. A semiconductor etching apparatus characterized by suppressing the occurrence of polypolymer by not exposing. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950029508A 1995-09-11 1995-09-11 Semiconductor Etching Device with Anode Electrode KR970018192A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950029508A KR970018192A (en) 1995-09-11 1995-09-11 Semiconductor Etching Device with Anode Electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950029508A KR970018192A (en) 1995-09-11 1995-09-11 Semiconductor Etching Device with Anode Electrode

Publications (1)

Publication Number Publication Date
KR970018192A true KR970018192A (en) 1997-04-30

Family

ID=66596507

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950029508A KR970018192A (en) 1995-09-11 1995-09-11 Semiconductor Etching Device with Anode Electrode

Country Status (1)

Country Link
KR (1) KR970018192A (en)

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