KR970023797A - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method Download PDF

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Publication number
KR970023797A
KR970023797A KR1019950037800A KR19950037800A KR970023797A KR 970023797 A KR970023797 A KR 970023797A KR 1019950037800 A KR1019950037800 A KR 1019950037800A KR 19950037800 A KR19950037800 A KR 19950037800A KR 970023797 A KR970023797 A KR 970023797A
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KR
South Korea
Prior art keywords
etching
wafer
semiconductor device
entire surface
protection film
Prior art date
Application number
KR1019950037800A
Other languages
Korean (ko)
Inventor
이정희
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950037800A priority Critical patent/KR970023797A/en
Publication of KR970023797A publication Critical patent/KR970023797A/en

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  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

반도체장치의 제조에서 문제가 되는 이물질의 발생을 방지하는 방법이 개시되어 있다.A method of preventing the generation of foreign matters that is problematic in the manufacture of semiconductor devices is disclosed.

본 발명은 반도체장치의 제조방법에 있어서 에지부를 제외한 웨이퍼 전면에 에칭보호막을 형성시키는 단계, 에지부를 제외한 전면에 에칭보호막이 형성된 웨이퍼를 전면에 걸쳐 에칭하는 단계 및 상기 에칭 후 남아있는 에칭보호막을 제거하는 단계를 구비하여 이루어진 웨이퍼 에지 에칭공정을 구비함을 특징으로 한다. 따라서, 반도체장치의 제조과정에서 이물질의 발생을 방지하는 효과가 있다.The present invention provides a method of manufacturing a semiconductor device, comprising: forming an etching protective film on the entire surface of the wafer except for the edge portion, etching the wafer having the etching protective film on the entire surface except the edge portion, and removing the etching protection film remaining after the etching. It characterized in that it comprises a wafer edge etching process comprising a step. Therefore, there is an effect of preventing the generation of foreign substances in the manufacturing process of the semiconductor device.

Description

반도체장치 제조방법Semiconductor device manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도 내지 제4도는 본 발명의 특징을 이루는 웨이퍼 에지 에칭(wafer etching)공정을 나타낸 공정도이다.1 through 4 are process diagrams showing a wafer edge etching process which is a feature of the present invention.

Claims (3)

반도체장치 제조방법에 있어서, 웨이퍼의 에지부를 제외한 전면에 에칭보호막을 형성시키는 단계; 상기 웨이퍼를 전면에 걸쳐 에칭하는 단계; 및 상기 에칭 후 남아있는 포토레이지스트를 제거하는 단계;를 구비하여 이루어지는 웨이퍼 에지 에칭공정을 구비함을 특징으로 하는 반도체장치 제조방법.A method of manufacturing a semiconductor device, comprising: forming an etching protection film on an entire surface except an edge portion of a wafer; Etching the wafer across the entire surface; And removing the photoresist remaining after the etching. 제1항에 있어서, 상기 에칭보호막은 포토레지스트임을 특징으로 하는 상기 반도체장치 제조방법.The method of claim 1, wherein the etching protection film is a photoresist. 제1항에 있어서, 상기 에칭보호막을 형성시키는 단계는 웨이퍼 전면에 에칭보호막을 형성시키는 단계와 웨이퍼 에지부의 에칭보호막을 제거하는 단계로 이루어지는 것임을 특징으로 하는 상기 반도체장치 제조방법.The method of claim 1, wherein the forming of the etching protection film comprises forming an etching protection film on the entire surface of the wafer and removing the etching protection film at the edge portion of the wafer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950037800A 1995-10-28 1995-10-28 Semiconductor device manufacturing method KR970023797A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950037800A KR970023797A (en) 1995-10-28 1995-10-28 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950037800A KR970023797A (en) 1995-10-28 1995-10-28 Semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
KR970023797A true KR970023797A (en) 1997-05-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950037800A KR970023797A (en) 1995-10-28 1995-10-28 Semiconductor device manufacturing method

Country Status (1)

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KR (1) KR970023797A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100420559B1 (en) * 2001-01-15 2004-03-02 삼성전자주식회사 Semiconductor manufacturing method for reducing particle

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100420559B1 (en) * 2001-01-15 2004-03-02 삼성전자주식회사 Semiconductor manufacturing method for reducing particle

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