KR970063717A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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Publication number
KR970063717A
KR970063717A KR1019960003809A KR19960003809A KR970063717A KR 970063717 A KR970063717 A KR 970063717A KR 1019960003809 A KR1019960003809 A KR 1019960003809A KR 19960003809 A KR19960003809 A KR 19960003809A KR 970063717 A KR970063717 A KR 970063717A
Authority
KR
South Korea
Prior art keywords
ion implantation
forming
semiconductor device
silicon substrate
film
Prior art date
Application number
KR1019960003809A
Other languages
Korean (ko)
Inventor
한재종
김세표
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960003809A priority Critical patent/KR970063717A/en
Publication of KR970063717A publication Critical patent/KR970063717A/en

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Abstract

본 발명은 실리콘 기판으로의 이온주입공정시 이온주입 도우즈와 빔전류를 제한하여 실리콘 기판의 결정손상을 최소시켜 줌으로써, 후속의 에피택셜층의 형성공정시 결점이 없는(defect-free) 에피택셜층을 형성할 수 있는 반도체 장치의 제조방법에 관한 것이다.The present invention minimizes the crystal damage of the silicon substrate by limiting the ion implant dose and the beam current in the ion implantation process into the silicon substrate, so that the defect-free epitaxial layer To a method of manufacturing a semiconductor device.

본 발명은 반도체 장치의 제조방법은 실리콘 기판상에 패드 산화막을 형성하는 공정과, 패드 산호막상에 감광막을 도포하고 패터닝하는 공정과, 패터닝된 감광막을 마스크로 하여 도우즈가 2.0E14 내지 3.0E14, 빔전류가 200 내지 500㎂ 이하, 그리고 이온주입에너지가 100keV인 조건에서 이온주입공정을 수행하여 매몰층을 형성하는 공정과, 감광막과 패드 산화막을 제거하는 공정과, 매몰층이 형성된 기판상에 에피택셜층을 성장시키는 공정을 포함한다.According to the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a pad oxide film on a silicon substrate; applying and patterning a photoresist on the pad coral film; Forming a buried layer by performing an ion implantation process under a condition that a beam current is 200 to 500 占 이하 or less and an ion implantation energy is 100 keV; a step of removing a photoresist film and a pad oxide film; And growing a special layer.

Description

반도체 장치의 제조방법Method for manufacturing semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도(a)-(c)는 본 발명의 실시예에 따른 Bi-CMOS 소자의 에피택셜층 형성공정도.FIGS. 1 (a) - (c) are views showing a process of forming an epitaxial layer of a Bi-CMOS device according to an embodiment of the present invention.

Claims (1)

바이-씨모스소자의 에피택셜층을 형성하는 방법에 있어서, 패드 산화막(12)상에 감광막(13)을 도포하고 패터닝하는 공정과, 패터닝된 감광막(13)을 마스크로 하여 도우즈가 2.0E14 내지 3.0E14, 빔전류가 200 내지 500㎂ 이하, 그리고 이온주입에너지가 100keV인 조건에서 이온주입공정을 수행하여 매몰층(14)을 형성하는 공정과, 감광막(13)과 패드 산화막(12)을 제거하는 공정과, 매몰층이 형성된 기판상에 에피택셜층을 성장시키는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조방법.A method of forming an epitaxial layer of a bi-cimost element, comprising: a step of applying and patterning a photoresist film (13) on a pad oxide film (12); and a step of patterning the patterned photoresist film (13) Forming a buried layer 14 by performing an ion implantation process under a condition that a beam current is 200 to 500 A or less and an ion implantation energy is 100 keV; and a step of forming a photoresist film 13 and a pad oxide film 12 And a step of growing an epitaxial layer on the substrate having the buried layer formed thereon. ※ 참고사항 ; 최초출원 내용에 의하여 공개하는 것임.※ Note ; It is disclosed by the contents of the first application.
KR1019960003809A 1996-02-16 1996-02-16 Method for manufacturing semiconductor device KR970063717A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960003809A KR970063717A (en) 1996-02-16 1996-02-16 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960003809A KR970063717A (en) 1996-02-16 1996-02-16 Method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
KR970063717A true KR970063717A (en) 1997-09-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960003809A KR970063717A (en) 1996-02-16 1996-02-16 Method for manufacturing semiconductor device

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KR (1) KR970063717A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100649027B1 (en) * 2005-12-28 2006-11-27 동부일렉트로닉스 주식회사 Method for forming epitaxial layer in semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100649027B1 (en) * 2005-12-28 2006-11-27 동부일렉트로닉스 주식회사 Method for forming epitaxial layer in semiconductor device

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