KR970071127A - Pattern formation method using photoresist film - Google Patents

Pattern formation method using photoresist film Download PDF

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Publication number
KR970071127A
KR970071127A KR1019960011033A KR19960011033A KR970071127A KR 970071127 A KR970071127 A KR 970071127A KR 1019960011033 A KR1019960011033 A KR 1019960011033A KR 19960011033 A KR19960011033 A KR 19960011033A KR 970071127 A KR970071127 A KR 970071127A
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KR
South Korea
Prior art keywords
insulating film
photoresist
film
forming
pattern
Prior art date
Application number
KR1019960011033A
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Korean (ko)
Inventor
라형주
Original Assignee
배순훈
대우전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 배순훈, 대우전자 주식회사 filed Critical 배순훈
Priority to KR1019960011033A priority Critical patent/KR970071127A/en
Publication of KR970071127A publication Critical patent/KR970071127A/en

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Abstract

본 발명은 이온 주입 공정에 의하여 불순물 이온이 주입된 절연막에 감광막을 사용하여 소정 형상의 패턴을 형성시키기 위한 방법에 관한 것으로, 반도체 기판상에 절연막을 형성시키는 단계와, 상기 절연막의 표면상에 불순물 이온을 주입시키는 단계와, 상기 절연막의 표면에 주입된 불순물 이온을 열확산시키는 단계와, 상기 절연막을 표면 안정화 용액에 담그는 단계와, 표면 안정화 처리된 상기 절연막상에 감광막을 형성시키는 단계와, 상기 감광막을 소정 형상으로 패터닝시키는 단계와, 상기 감광막의 패턴을 통하여 노출된 상기 절연막을 식각 공정에 의하여 패터닝시키는 단계로 이루어지며 이에 의해서 감광막의 패턴을 통하여 노출된 상기 절연막을 식각 공정에 의하여 패터닝시키는 단계로 이루어지며 이에 의해서 감광막과 절연막의 붙임성을 향상시켜서 감광막의 패턴을 통하여 노출된 절연막의 일부를 습식 식각 공정에 의하여 제거함으로서 절연막은 원하는 선폭 및 형상으로 패터닝된다.The present invention relates to a method for forming a pattern of a predetermined shape by using a photoresist film on an insulating film into which an impurity ion is implanted by an ion implantation process, the method comprising the steps of: forming an insulating film on a semiconductor substrate; Implanting ions into the surface stabilizing solution; and thermally diffusing impurity ions implanted into the surface of the insulating film; immersing the insulating film in a surface stabilizing solution; forming a photoresist film on the surface stabilized insulating film; And patterning the insulating layer exposed through the pattern of the photoresist layer by an etching process, thereby patterning the insulating layer exposed through the pattern of the photoresist layer by an etching process Thereby forming a photoresist film and an insulating film Improved through by the pattern of the photoresist layer by removing a portion of the exposed insulating film by a wet etching process, the insulating film is patterned in a desired line width and shape.

Description

감광막을 이용한 패턴 형성 방법Pattern formation method using photoresist film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제3도는 본 발명에 따른 패턴 형성 방법을 나타낸 흐름도.FIG. 3 is a flow chart showing a pattern forming method according to the present invention;

Claims (3)

반도체 기판(43)상에 절연막(42)을 형성시키는 단계와, 상기 절연막(42)의 표면상에 불순물 이온을 주입시키는 단계와, 상기 절연막(42)의 표면에 주입된 불순물 이온을 열확산시키는 단계와, 상기 절연막(42)을 표면 안정화 용액에 담그는 단계와, 표면 안정화 처리된 상기 절연막(42)상에 감광막(41)을 형성시키는 단계와, 상기 감광막(41)을 소정 형상으로 패터닝시키는 단계와, 상기 감광막(41)의 패턴을 통하여 노출된 상기 절연막(42)을 식각 공정에 의하여 패터닝시키는 단계로 이루어진 것을 특징으로 하는 감광막을 이용한 패턴 형성 방법.A step of forming an insulating film 42 on the semiconductor substrate 43; a step of implanting impurity ions on the surface of the insulating film 42; a step of thermally diffusing impurity ions implanted into the surface of the insulating film 42; Immersing the insulating film 42 in a surface stabilizing solution; forming a photoresist film 41 on the surface stabilized insulating film 42; patterning the photoresist film 41 in a predetermined shape; , And patterning the insulating layer (42) exposed through the pattern of the photoresist layer (41) by an etching process. 제1항에 있어서, 상기 표면 안정화 용액은 황산 용액과 과산화수 용액으로 이루어져 있는 것을 특징으로 하는 감광막을 이용한 패턴 형성 방법.The method according to claim 1, wherein the surface stabilizing solution comprises a sulfuric acid solution and a peroxide solution. 제2항에 있어서, 불순물 이온이 주입된 상기 절연막(42)은 상기 표면 안정화 용액에 5분 내지 15분 동안 담그어지는 것을 특징으로 하는 감광막을 이용한 패턴 형성 방법.3. The method according to claim 2, wherein the insulating film (42) into which the impurity ions are implanted is immersed in the surface stabilizing solution for 5 to 15 minutes. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960011033A 1996-04-12 1996-04-12 Pattern formation method using photoresist film KR970071127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960011033A KR970071127A (en) 1996-04-12 1996-04-12 Pattern formation method using photoresist film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960011033A KR970071127A (en) 1996-04-12 1996-04-12 Pattern formation method using photoresist film

Publications (1)

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KR970071127A true KR970071127A (en) 1997-11-07

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KR1019960011033A KR970071127A (en) 1996-04-12 1996-04-12 Pattern formation method using photoresist film

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468667B1 (en) * 1997-06-17 2005-03-16 삼성전자주식회사 Forming of pattern for semiconductor device by photolithographic process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468667B1 (en) * 1997-06-17 2005-03-16 삼성전자주식회사 Forming of pattern for semiconductor device by photolithographic process

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