KR950027904A - Silicon film surface treatment method after plasma etching - Google Patents

Silicon film surface treatment method after plasma etching Download PDF

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Publication number
KR950027904A
KR950027904A KR1019940005340A KR19940005340A KR950027904A KR 950027904 A KR950027904 A KR 950027904A KR 1019940005340 A KR1019940005340 A KR 1019940005340A KR 19940005340 A KR19940005340 A KR 19940005340A KR 950027904 A KR950027904 A KR 950027904A
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KR
South Korea
Prior art keywords
silicon film
plasma etching
film surface
surface treatment
treatment method
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Application number
KR1019940005340A
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Korean (ko)
Inventor
이주영
이완기
Original Assignee
김주용
현대전자산업주식회사
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Priority to KR1019940005340A priority Critical patent/KR950027904A/en
Publication of KR950027904A publication Critical patent/KR950027904A/en

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Abstract

본 발명은 프라즈마(Plasma)식각시 실리콘막 표면이 노출되어 손상을 받게 되는 모든 반도체 제조 공정에 적용되는 플라즈마 식각후의 실리콘막 표면 처리 방법에 있어서; 플라즈마 식각후 식각마스크 물질을 제거하는 단계; 플라즈마에 노출되어 손상받은 실리콘막 표면을 HNO9+HF+순수(DI water)용액으로 제거하는 단계를 포함하여 이루어지는 것을 특징으로 하는 플라즈마 식각후의 실리콘막 표면 처리 방법에 관한 것으로 손상부위로 인해발생하는 소자의 특성저하 및 수율 감소를 방지하는 효과가 있다.The present invention provides a method for treating a silicon film surface after plasma etching, which is applied to all semiconductor manufacturing processes in which a surface of a silicon film is exposed and damaged during plasma etching; Removing the etch mask material after plasma etching; A method of treating a silicon film surface after plasma etching comprising removing the damaged silicon film surface by exposure to plasma with HNO 9 + HF + DI water solution. It is effective in preventing the deterioration of properties and the decrease in yield.

Description

플라즈마 식각후의 실리콘막 표면 처리 방법Silicon film surface treatment method after plasma etching

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1C도는 본 발명의 일실시예를 설명하기 위한 예시도.1A to 1C are exemplary views for explaining an embodiment of the present invention.

Claims (1)

플라즈마(Plasma) 식각시 실리콘막 표면이 노출되어 손상을 받게 되는 모든 반도체 제조 공정에 적용되는 플라즈마 식각후의 실리콘막 표면 처리 방법에 있어서; 플라즈마 식각후 식각마스크 물질을 제거하는 단계; 플라즈마에 노출되어 손상받은 실리콘막 표면을 HNO9, HF 및 순수(DI water)의 혼합용액으로 제거하는 단계를 포함하여 이루어지는 것을 특징으로 하는 플라즈마 식각후의 실리콘막 표면 처리방법.A method of treating a silicon film surface after plasma etching, which is applied to all semiconductor manufacturing processes in which a surface of a silicon film is exposed and damaged during plasma etching; Removing the etch mask material after plasma etching; Removing the surface of the silicon film damaged by exposure to the plasma with a mixed solution of HNO 9 , HF and DI water. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940005340A 1994-03-17 1994-03-17 Silicon film surface treatment method after plasma etching KR950027904A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940005340A KR950027904A (en) 1994-03-17 1994-03-17 Silicon film surface treatment method after plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940005340A KR950027904A (en) 1994-03-17 1994-03-17 Silicon film surface treatment method after plasma etching

Publications (1)

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KR950027904A true KR950027904A (en) 1995-10-18

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KR1019940005340A KR950027904A (en) 1994-03-17 1994-03-17 Silicon film surface treatment method after plasma etching

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KR (1) KR950027904A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100299329B1 (en) * 1999-08-19 2001-11-01 황인길 Antenna pattern forming method to determine plasma damage of semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100299329B1 (en) * 1999-08-19 2001-11-01 황인길 Antenna pattern forming method to determine plasma damage of semiconductor devices

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