KR950027904A - Silicon film surface treatment method after plasma etching - Google Patents
Silicon film surface treatment method after plasma etching Download PDFInfo
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- KR950027904A KR950027904A KR1019940005340A KR19940005340A KR950027904A KR 950027904 A KR950027904 A KR 950027904A KR 1019940005340 A KR1019940005340 A KR 1019940005340A KR 19940005340 A KR19940005340 A KR 19940005340A KR 950027904 A KR950027904 A KR 950027904A
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- South Korea
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- silicon film
- plasma etching
- film surface
- surface treatment
- treatment method
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Abstract
본 발명은 프라즈마(Plasma)식각시 실리콘막 표면이 노출되어 손상을 받게 되는 모든 반도체 제조 공정에 적용되는 플라즈마 식각후의 실리콘막 표면 처리 방법에 있어서; 플라즈마 식각후 식각마스크 물질을 제거하는 단계; 플라즈마에 노출되어 손상받은 실리콘막 표면을 HNO9+HF+순수(DI water)용액으로 제거하는 단계를 포함하여 이루어지는 것을 특징으로 하는 플라즈마 식각후의 실리콘막 표면 처리 방법에 관한 것으로 손상부위로 인해발생하는 소자의 특성저하 및 수율 감소를 방지하는 효과가 있다.The present invention provides a method for treating a silicon film surface after plasma etching, which is applied to all semiconductor manufacturing processes in which a surface of a silicon film is exposed and damaged during plasma etching; Removing the etch mask material after plasma etching; A method of treating a silicon film surface after plasma etching comprising removing the damaged silicon film surface by exposure to plasma with HNO 9 + HF + DI water solution. It is effective in preventing the deterioration of properties and the decrease in yield.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A도 내지 제1C도는 본 발명의 일실시예를 설명하기 위한 예시도.1A to 1C are exemplary views for explaining an embodiment of the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940005340A KR950027904A (en) | 1994-03-17 | 1994-03-17 | Silicon film surface treatment method after plasma etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940005340A KR950027904A (en) | 1994-03-17 | 1994-03-17 | Silicon film surface treatment method after plasma etching |
Publications (1)
Publication Number | Publication Date |
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KR950027904A true KR950027904A (en) | 1995-10-18 |
Family
ID=66690063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940005340A KR950027904A (en) | 1994-03-17 | 1994-03-17 | Silicon film surface treatment method after plasma etching |
Country Status (1)
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KR (1) | KR950027904A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100299329B1 (en) * | 1999-08-19 | 2001-11-01 | 황인길 | Antenna pattern forming method to determine plasma damage of semiconductor devices |
-
1994
- 1994-03-17 KR KR1019940005340A patent/KR950027904A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100299329B1 (en) * | 1999-08-19 | 2001-11-01 | 황인길 | Antenna pattern forming method to determine plasma damage of semiconductor devices |
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