KR950025483A - How to Apply Photoresist - Google Patents

How to Apply Photoresist Download PDF

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Publication number
KR950025483A
KR950025483A KR1019950004353A KR19950004353A KR950025483A KR 950025483 A KR950025483 A KR 950025483A KR 1019950004353 A KR1019950004353 A KR 1019950004353A KR 19950004353 A KR19950004353 A KR 19950004353A KR 950025483 A KR950025483 A KR 950025483A
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KR
South Korea
Prior art keywords
substrate
reactive oxygen
film
photoresist
resist
Prior art date
Application number
KR1019950004353A
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Korean (ko)
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KR100189801B1 (en
Inventor
에롤드 나이트 스테픈
엘린우드 루스 스테픈
레디 맥데비트 토마스
Original Assignee
윌리엄 티. 엘리스
인터내셔널 비지네스 머신즈 코포레이션
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Publication date
Priority claimed from US08/202,418 external-priority patent/US5486267A/en
Application filed by 윌리엄 티. 엘리스, 인터내셔널 비지네스 머신즈 코포레이션 filed Critical 윌리엄 티. 엘리스
Publication of KR950025483A publication Critical patent/KR950025483A/en
Application granted granted Critical
Publication of KR100189801B1 publication Critical patent/KR100189801B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 기판에 포토레지스트를 인가하기에 앞서 기판의 처리를 위한 방법을 제공한다. TEOS-계 실리콘 디옥사이드 또는 실리콘 질화물막 등의 기판을 선택하여 반응성 산소로 처리한다. 반응성 산소는 예를 들면 오존 또는 오존 플라즈마를 포함할 수 있다. 가판 처리후에, 포토레지스트, 바람직하기로는 디프 UV감광성에 사용할 수 있는 산-촉매화된 포토레지스트가 인가된다.The present invention provides a method for processing a substrate prior to applying the photoresist to the substrate. Substrates such as TEOS-based silicon dioxide or silicon nitride films are selected and treated with reactive oxygen. Reactive oxygen may include, for example, ozone or ozone plasma. After the substrate treatment, a photoresist is applied, preferably an acid-catalyzed photoresist that can be used for deep UV photosensitivity.

Description

포토레지스트를 인가하는 방법How to Apply Photoresist

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 방법에 따라 레지스트 인가에 앞서 기판의 막의 처리를 한 DUV감광성 포토레지스트에 패턴된 트랜치의 단면도.2 is a cross-sectional view of a trench patterned in a DUV photosensitive photoresist treated with a film of a substrate prior to resist application in accordance with the method of the present invention.

Claims (10)

기판에 포토레지스트를 인가하기에 앞서 기판의 처리를 위한 방법에 있어서, 기판을 선택하는 단계; 반응성 산소로 상기 기판을 처리하는 단계; 및 상기 처리된 기판에 레지스트를 인가하는 단계를 포함하는 것을 특징으로 하는 기판 처리방법.A method for processing a substrate prior to applying a photoresist to the substrate, comprising: selecting a substrate; Treating the substrate with reactive oxygen; And applying a resist to the processed substrate. 제1항에 있어서, 상기 기판은 막을 포함하는 것을 특징으로 하는 기판 처리 방법.The method of claim 1, wherein the substrate comprises a film. 제2항에 있어서, 상기 막은 실리콘 디옥사이드(silicon dioxide)를 포함하는 것을 특징으로 하는 기판 처리방법.The method of claim 2, wherein the film comprises silicon dioxide. 제2항에 있어서, 상기 막은 테트라에톡시실란-계 실리콘 디옥사이드(tetraethoxysilane-based silicon dioxide)를 포함하는 섯을 특징으로 하는 기판 처리방법.3. The method of claim 2, wherein the film comprises tetraethoxysilane-based silicon dioxide. 제2항에 있어서, 상기 막은 실리콘 질화물을 포함하는 것을 특징으로 하는 기판 처리방법.3. The method of claim 2, wherein said film comprises silicon nitride. 제2항에 있어서, 상기 막은 화 적으로 기상 증착(chemically vapor deposited)된 것을 특징으로 하는 기판 처리방법.The method of claim 2, wherein the film is chemically vapor deposited. 제1항에 있어서, 상기 반응성 산소를 오존을 포함하는 것을 특징으로 하는 기판 처리방법.The method of claim 1, wherein the reactive oxygen comprises ozone. 제1항에 있어서, 상기 기판을 저리하기 위해 반응성 산소 플라즈마를 발생하도록 상기 반응성 산소를 전자기 여기시키는 것을 특징으로 하는 기판 처리방법.The method of claim 1, wherein the reactive oxygen is electromagnetically excited to generate a reactive oxygen plasma to defer the substrate. 제1항에 있어서, 상기 레즈스트는 산-촉매화된(acid-catalyzed)레지스트를 포함하는 것을 특징으로 하는 기판 처리방법.The method of claim 1, wherein the resist comprises an acid-catalyzed resist. 제1항에 있어서, 상기 반응성 산소는 약 5중량% 내지 100중량%의 농도로 존재하는 것을 특징으로 하는 기판 처리방법,The method of claim 1, wherein the reactive oxygen is present at a concentration of about 5% to 100% by weight. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950004353A 1994-02-28 1995-02-28 Method for applying photoresist KR100189801B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/202,418 1994-02-28
US08/202,418 1994-02-28
US08/202,418 US5486267A (en) 1994-02-28 1994-02-28 Method for applying photoresist

Publications (2)

Publication Number Publication Date
KR950025483A true KR950025483A (en) 1995-09-15
KR100189801B1 KR100189801B1 (en) 1999-06-01

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Application Number Title Priority Date Filing Date
KR1019950004353A KR100189801B1 (en) 1994-02-28 1995-02-28 Method for applying photoresist

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Publication number Publication date
KR100189801B1 (en) 1999-06-01

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