KR970016797A - Formation method of photoresist pattern - Google Patents
Formation method of photoresist pattern Download PDFInfo
- Publication number
- KR970016797A KR970016797A KR1019950029511A KR19950029511A KR970016797A KR 970016797 A KR970016797 A KR 970016797A KR 1019950029511 A KR1019950029511 A KR 1019950029511A KR 19950029511 A KR19950029511 A KR 19950029511A KR 970016797 A KR970016797 A KR 970016797A
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist
- pattern
- forming
- photoresist pattern
- silicide
- Prior art date
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Abstract
실리레이션(silylation)을 이용한 포토페지스트 패턴의 형성 방법에 관한 것으로서 더욱 상세하게는 실리콘을 포함하는 화학종의 확산에 의한 결함 발생을 제거하여 양질의 포토레지스트 패턴의 형성하는 방법에 관한 것이다.The present invention relates to a method of forming a photoresist pattern using sillation, and more particularly, to a method of forming a high quality photoresist pattern by removing defects caused by diffusion of a chemical species including silicon.
본 발명의 실리레이션을 이용한 포토레지스트 패턴의 형성 방법은 패턴이 형성될 층 위에 서로 다른 실릴화 특성을 갖는 포토레지스트층들을 차례로 형성하는 단계 ; 패턴 마스크를 사용하여 상기 포토레지스트 층들을 노광 및 현상시키는 단계 ; 상기 현상된 포토레지스트층들에 실리콘을 포함하고 있는 화학종을 확산시키는 단계 ; 및 실리레이션 패턴을 마스크로 하부의 포토레지스트층을 식각하여 포토레지스트 패턴을 형성하는 단계를 포함함을 특징으로 한다.The method of forming a photoresist pattern using the silicide of the present invention includes the steps of sequentially forming photoresist layers having different silylation characteristics on the layer on which the pattern is to be formed; Exposing and developing the photoresist layers using a pattern mask; Diffusing a chemical species containing silicon into the developed photoresist layers; And etching the lower photoresist layer using the silicide pattern as a mask to form a photoresist pattern.
본 발명에 따른 포토레지스트 패턴의 형성 방법에 있어서는 실리레이션 될 부분 이외의 부분을 미리 부차적인 포토레지스트에 의해 차단시킨 다음에 실리레이션을 행함으로써 양질의 포토레지스트 패턴을 형성할 수 있다는 효과를 갖는다.The method of forming a photoresist pattern according to the present invention has the effect of forming a high quality photoresist pattern by blocking the portions other than the portions to be silicideed by the secondary photoresist and then performing the silicide.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 2A도 및 제 2D도는 본 발명의 포토레지스트 패턴의 형성 방법을 보이는 공정 단면도들이다.2A and 2D are cross-sectional views showing the process for forming the photoresist pattern of the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950029511A KR970016797A (en) | 1995-09-11 | 1995-09-11 | Formation method of photoresist pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950029511A KR970016797A (en) | 1995-09-11 | 1995-09-11 | Formation method of photoresist pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970016797A true KR970016797A (en) | 1997-04-28 |
Family
ID=66596720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950029511A KR970016797A (en) | 1995-09-11 | 1995-09-11 | Formation method of photoresist pattern |
Country Status (1)
Country | Link |
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KR (1) | KR970016797A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100520670B1 (en) * | 1999-05-06 | 2005-10-10 | 주식회사 하이닉스반도체 | A Process for Forming Photoresist Pattern |
-
1995
- 1995-09-11 KR KR1019950029511A patent/KR970016797A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100520670B1 (en) * | 1999-05-06 | 2005-10-10 | 주식회사 하이닉스반도체 | A Process for Forming Photoresist Pattern |
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