KR970016797A - Formation method of photoresist pattern - Google Patents

Formation method of photoresist pattern Download PDF

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Publication number
KR970016797A
KR970016797A KR1019950029511A KR19950029511A KR970016797A KR 970016797 A KR970016797 A KR 970016797A KR 1019950029511 A KR1019950029511 A KR 1019950029511A KR 19950029511 A KR19950029511 A KR 19950029511A KR 970016797 A KR970016797 A KR 970016797A
Authority
KR
South Korea
Prior art keywords
photoresist
pattern
forming
photoresist pattern
silicide
Prior art date
Application number
KR1019950029511A
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Korean (ko)
Inventor
박춘근
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950029511A priority Critical patent/KR970016797A/en
Publication of KR970016797A publication Critical patent/KR970016797A/en

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Abstract

실리레이션(silylation)을 이용한 포토페지스트 패턴의 형성 방법에 관한 것으로서 더욱 상세하게는 실리콘을 포함하는 화학종의 확산에 의한 결함 발생을 제거하여 양질의 포토레지스트 패턴의 형성하는 방법에 관한 것이다.The present invention relates to a method of forming a photoresist pattern using sillation, and more particularly, to a method of forming a high quality photoresist pattern by removing defects caused by diffusion of a chemical species including silicon.

본 발명의 실리레이션을 이용한 포토레지스트 패턴의 형성 방법은 패턴이 형성될 층 위에 서로 다른 실릴화 특성을 갖는 포토레지스트층들을 차례로 형성하는 단계 ; 패턴 마스크를 사용하여 상기 포토레지스트 층들을 노광 및 현상시키는 단계 ; 상기 현상된 포토레지스트층들에 실리콘을 포함하고 있는 화학종을 확산시키는 단계 ; 및 실리레이션 패턴을 마스크로 하부의 포토레지스트층을 식각하여 포토레지스트 패턴을 형성하는 단계를 포함함을 특징으로 한다.The method of forming a photoresist pattern using the silicide of the present invention includes the steps of sequentially forming photoresist layers having different silylation characteristics on the layer on which the pattern is to be formed; Exposing and developing the photoresist layers using a pattern mask; Diffusing a chemical species containing silicon into the developed photoresist layers; And etching the lower photoresist layer using the silicide pattern as a mask to form a photoresist pattern.

본 발명에 따른 포토레지스트 패턴의 형성 방법에 있어서는 실리레이션 될 부분 이외의 부분을 미리 부차적인 포토레지스트에 의해 차단시킨 다음에 실리레이션을 행함으로써 양질의 포토레지스트 패턴을 형성할 수 있다는 효과를 갖는다.The method of forming a photoresist pattern according to the present invention has the effect of forming a high quality photoresist pattern by blocking the portions other than the portions to be silicideed by the secondary photoresist and then performing the silicide.

Description

포토레지스트 패턴의 형성 방법Formation method of photoresist pattern

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2A도 및 제 2D도는 본 발명의 포토레지스트 패턴의 형성 방법을 보이는 공정 단면도들이다.2A and 2D are cross-sectional views showing the process for forming the photoresist pattern of the present invention.

Claims (3)

실리레이션을 이용한 포토레지스트 패턴의 형성 방법에 있어서, 패턴이 형성될 층 위에 서로 다른 실릴화 특성을 갖는 포토레지스트층들을 차례로 형성하는 단계 ; 패턴 마스크를 사용하여 상기 포토레지스트층들을 노광 및 현상시키는 단계 ; 상기 현상된 포토레지스트층들에 실리콘을 포함하고 있는 화학종을 확산시키는 단계 ; 및 실리레이션 패턴을 마스크로 하부의 포토레지스트층을 식각하여 포토레지스트 형성하는 단계를 포함하는 포토레지스트 패턴의 형성 방법.CLAIMS What is claimed is: 1. A method of forming a photoresist pattern using silicide, the method comprising: sequentially forming photoresist layers having different silylation characteristics on a layer on which a pattern is to be formed; Exposing and developing the photoresist layers using a pattern mask; Diffusing a chemical species containing silicon into the developed photoresist layers; And etching the lower photoresist layer using the silicide pattern as a mask to form a photoresist. 제 1항에 있어서, 서로 다른 실릴화 특성을 갖는 포토레지스트로 노광에 의해 가교 결합이 되어 실리콘을 포함한 화학종이 확산되는 속도가 낮아지는 것을 특징으로 하는 포토레지스트 형성 방법.The method of claim 1, wherein the photoresist having different silylation properties is crosslinked by exposure to decrease the rate at which chemical species including silicon diffuse. 제 1항에 있어서, 포토 레지스트층을 차례로 형성하는 단계에서 하부에 포지티브 포토레지스트의 상부에 네가티브 포토레지스트를 차례로 형성함을 특징으로 하는 포토레지스트 형성 방법.The method of claim 1, wherein in the step of sequentially forming the photoresist layer, the negative photoresist is sequentially formed on the lower portion of the positive photoresist. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950029511A 1995-09-11 1995-09-11 Formation method of photoresist pattern KR970016797A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950029511A KR970016797A (en) 1995-09-11 1995-09-11 Formation method of photoresist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950029511A KR970016797A (en) 1995-09-11 1995-09-11 Formation method of photoresist pattern

Publications (1)

Publication Number Publication Date
KR970016797A true KR970016797A (en) 1997-04-28

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Application Number Title Priority Date Filing Date
KR1019950029511A KR970016797A (en) 1995-09-11 1995-09-11 Formation method of photoresist pattern

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100520670B1 (en) * 1999-05-06 2005-10-10 주식회사 하이닉스반도체 A Process for Forming Photoresist Pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100520670B1 (en) * 1999-05-06 2005-10-10 주식회사 하이닉스반도체 A Process for Forming Photoresist Pattern

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