KR970048970A - Halftone Phase Inversion Mask Manufacturing Method Partially Permeable - Google Patents

Halftone Phase Inversion Mask Manufacturing Method Partially Permeable Download PDF

Info

Publication number
KR970048970A
KR970048970A KR1019950047893A KR19950047893A KR970048970A KR 970048970 A KR970048970 A KR 970048970A KR 1019950047893 A KR1019950047893 A KR 1019950047893A KR 19950047893 A KR19950047893 A KR 19950047893A KR 970048970 A KR970048970 A KR 970048970A
Authority
KR
South Korea
Prior art keywords
film
substrate
forming
photoresist
light shielding
Prior art date
Application number
KR1019950047893A
Other languages
Korean (ko)
Other versions
KR0152925B1 (en
Inventor
김상표
Original Assignee
문정환
Lg 반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, Lg 반도체주식회사 filed Critical 문정환
Priority to KR1019950047893A priority Critical patent/KR0152925B1/en
Publication of KR970048970A publication Critical patent/KR970048970A/en
Application granted granted Critical
Publication of KR0152925B1 publication Critical patent/KR0152925B1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 부분 투과성을 갖는 하프톤 위상반전마스크 제조방법에 관한 것으로, 기판 상의 격리 패턴 형성영역에 제1감광막을 형성하는 공정과; 상기 제1감광막과 기판 상에 투명막을 형성하는 공정과; 상기 제1감광막과 그 위에 형성된 투명막을 제거하는 공정과; 기판 위에 잔존해 있는 상기 투명막 상에 제2감광막을 형성하는 공정과;상기 제감광막과 기판 상부에 차광막을 형성하는 공저과; 상기 제2감광막과 그 위에 형성된 차광막을 제거하는 공정가; 기판 위에 잔존해 있는 상기 차광막과 투명막 표면이 소정 부분 노출되도록 제3감광막을 형성항는 공정 및; 상기 제3감광막을 마스크로 기판 표면이 소정 부분 드러나도록 차광막과 투명막을 식각한 후, 제3감광막을 제거하는 공정을 구비하여 위상반전마스크 제조를 완료하므로써, 1) 차광막과인 Cr 막을 이용하여 흐프톤 OSM의 격리 패턴 주위에 생성되는 사이드로브를 방지할 수 있고, 2) 더미 패턴 형성시, E빔의 스폿 사이즈(spot size) 를 줄여주는 과정에서 수반되는 비용(cost) 상승을 고려할 필요가 없어 비용 절감 효과를 얻을 수 있으며, 3) 더미 패턴에 의한 레이저 산란 등의 현상을 할 수 있게 되어 마스크 정합 여부를 보다 확실하게 확인할 수 있고, 4) 마스크 손상(defect) 여부 검출이 가능한 고신회성의 하프톤 위상반전 마스크를 구현할 수 있게 된다.The present invention relates to a method of manufacturing a halftone phase inversion mask having partial permeability, comprising: forming a first photosensitive film in an isolation pattern formation region on a substrate; Forming a transparent film on the first photosensitive film and the substrate; Removing the first photosensitive film and the transparent film formed thereon; Forming a second photoresist film on the transparent film remaining on the substrate; a co-deposition for forming a light shielding film on the photoresist film and the substrate; A process member for removing the second photoresist film and the light shielding film formed thereon; Forming a third photosensitive film such that the light blocking film remaining on the substrate and the surface of the transparent film are partially exposed; After the light blocking film and the transparent film are etched to expose a predetermined portion of the substrate surface by using the third photoresist mask as a mask, the step of removing the third photoresist film is completed. It is possible to prevent side lobes generated around the isolation pattern of the Fthon OSM, and 2) when forming the dummy pattern, there is no need to consider the cost associated with reducing the spot size of the E-beam. Cost savings can be achieved, and 3) laser scattering due to dummy patterns can be used to more reliably check whether a mask is matched, and 4) a high-fidelity harp capable of detecting mask defects. Tone phase inversion mask can be implemented.

Description

부분 투과성을 갖는 하프톤 위상반전마스크 제조방법.A halftone phase shift mask manufacturing method having partial permeability.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3 (가) 도 내지 제3(파) 도는 본 발명에 따른 부분 투과성 하프톤 위상반전마스크 제조방법을 도시한 공정수순도.3 (a) to 3 (wave) is a process flowchart showing a method of manufacturing a partially transmissive halftone phase shift mask according to the present invention.

Claims (7)

기판 상의 격리 패턴 형성 영역에 제1감광막을 형성하는 공정과; 상기 제1감광막과 기판 상에 투명막을 형성하는 공정과; 상기 제1감광막과 그 위에 형성된 투명막을 제거하는 공정과; 기판 위에 잔존해 있는 상기 투명막 상에 제2감광막을 형성하는 공정과; 상기 제2감광막과 기판 상부에 차광막을 형성하는 공정과; 상기 제2감광막과 그 위에 형성된 차광막을 제거하는 공정과; 기판 위에 잔존해 있는 상기 차광막과 투명막 표면이 소정 부분 노출되도록 제3감광막을 형성하는 공정 및; 상기 제3감광막을 마스크로 기판 표면이 소정 부분 드러 나도록 차광막과 투명막을 식각한 후, 제3감광막을 제거하는 공정을 구비하여 이루어진 것을 특징으로 하는 부분 투과성을 갖는 하프톤 위상반전마스크 제조방법.Forming a first photosensitive film in an isolation pattern formation region on the substrate; Forming a transparent film on the first photosensitive film and the substrate; Removing the first photosensitive film and the transparent film formed thereon; Forming a second photosensitive film on the transparent film remaining on the substrate; Forming a light shielding film on the second photoresist film and the substrate; Removing the second photoresist film and the light shielding film formed thereon; Forming a third photosensitive film such that the light shielding film remaining on the substrate and the surface of the transparent film are partially exposed; And etching the light shielding film and the transparent film so that a predetermined portion of the substrate surface is exposed by using the third photoresist film as a mask, and then removing the third photoresist film. 제1항에 있어서, 기판 상의 격리 패턴 형성 영역에 제1감광막을 형성하는 공정은, 기판 상에 제1감광막을 중착한 뒤, 격리 패턴 형성영역을 제외한 부분의 제1감광막 상에만 선택적으로 E빔 노광 및 현상을 실시하여 형성하는 것을 특징으로 하는 부분 투과성을 갖는 하프톤 위상반전마스크 제조방법.The process of claim 1, wherein the forming of the first photoresist film in the isolation pattern formation region on the substrate is performed by depositing the first photoresist film on the substrate, and then selectively E-beams only on the first photoresist film in the portion excluding the isolation pattern formation region. A halftone phase shift mask manufacturing method having partial permeability, which is formed by performing exposure and development. 제1항에 있어서, 상기 차광막은 Cr으로 형성하는 것을 특징으로 하는 부분 투과성을 갖는 하프톤 위상반전 마스크 제조방법.The method of claim 1, wherein the light shielding film is formed of Cr. 제1항에 있어서, 상기 제1감광막과 그 위에 형성된 투명막은 습식식각법으로 제거하는 것을 특징으로 하는 부분 투과성을 갖는 하프톤 위상반전마스크 제조방법.The method of claim 1, wherein the first photosensitive film and the transparent film formed thereon are removed by a wet etching method. 제1항에 있어서, 기판 위에 잔존해 있는 상기 투명막 상에 제2감광막을 형성하는 공정은, 투명막을 포함한 기판 전면에 제2감광막을 중착하고, 사익 제2감광막 상의 격리 패턴 형성 영역에만 선택적으로 E빔 노광을 실시한 후 현상하여 형성하는 것을 특징으로 하는 부분 투과성을 갖는 하프톤 위상반전마스크 제조방법.The process of claim 1, wherein the forming of the second photoresist film on the transparent film remaining on the substrate is performed by neutralizing the second photoresist film on the entire surface of the substrate including the transparent film and selectively forming only the isolation pattern forming region on the second photoresist film. A method of manufacturing a halftone phase shift mask having partial permeability, which is formed after performing E-beam exposure. 제1항에 있어서, 상기 제2감광막과 그 위에 형성된 차광막은 습식식각법으로 제거하는 것을 특징으로 하는 부분 투과성을 갖는 하프톤 위상반전마스크 제조방법.The method of claim 1, wherein the second photoresist film and the light shielding film formed thereon are removed by a wet etching method. 제1항에 있어서, 기판 위에 잔존해 있는 상기 차광막과 투명막 표면이 소정 부분 노출되도록 제3괌광막을 형성하는 공정은, 상기 차광막을 포함한 투명막 상에 제3감광막을 증착하고, 상기 제3감광막 상의 소정 부분에만 선택적으로 E빔 노광을 실시한 후 현상하여 형성하는 것을 특징으로 하는 부분 투과성을 갖는 하프톤 위상 반전마스크 제조방법.The process of claim 1, wherein the forming of a third Guam film so as to expose a predetermined portion of the surface of the light shielding film and the transparent film remaining on the substrate comprises depositing a third photoresist film on the transparent film including the light shielding film, A method of manufacturing a halftone phase reversal mask having partial transparency, characterized in that it is developed by selectively performing E-beam exposure only on a predetermined portion on the photosensitive film. ※ 참고사항: 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the original application.
KR1019950047893A 1995-12-08 1995-12-08 Preparation of phase shift mask with partial transmittance KR0152925B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950047893A KR0152925B1 (en) 1995-12-08 1995-12-08 Preparation of phase shift mask with partial transmittance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950047893A KR0152925B1 (en) 1995-12-08 1995-12-08 Preparation of phase shift mask with partial transmittance

Publications (2)

Publication Number Publication Date
KR970048970A true KR970048970A (en) 1997-07-29
KR0152925B1 KR0152925B1 (en) 1998-10-01

Family

ID=19438645

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950047893A KR0152925B1 (en) 1995-12-08 1995-12-08 Preparation of phase shift mask with partial transmittance

Country Status (1)

Country Link
KR (1) KR0152925B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117431505A (en) * 2023-12-19 2024-01-23 安徽光智科技有限公司 Mask method for metallized film coating of infrared detector window sheet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117431505A (en) * 2023-12-19 2024-01-23 安徽光智科技有限公司 Mask method for metallized film coating of infrared detector window sheet

Also Published As

Publication number Publication date
KR0152925B1 (en) 1998-10-01

Similar Documents

Publication Publication Date Title
Lin Phase-shifting masks gain an edge
KR970016774A (en) Manufacturing method of half-tone phase inversion mask
KR900017127A (en) Mask, mask manufacturing method and pattern formation method using mask
JPS6258652B2 (en)
KR970048970A (en) Halftone Phase Inversion Mask Manufacturing Method Partially Permeable
JP2007219128A (en) Method for manufacturing phase shift mask
JP2976193B2 (en) Phase inversion mask defect correction method
KR100314743B1 (en) Method of preparing phase shift mask of semiconductor device
JP2005017488A (en) Method for manufacturing phase shift mask, phase shift mask, and method for transferring pattern
GB2244349A (en) Method for manufacturing a mask
KR950004397A (en) How to remove defects in chrome mask for semiconductor manufacturing
KR950027921A (en) Mask manufacturing method for semiconductor
JP2000082650A (en) Projection exposure method
KR970016794A (en) Method for manufacturing halftone phase inversion mask
KR950012630A (en) Phase inversion mask and manufacturing method thereof
KR0139578B1 (en) Photoresist patterning method by lithography process
TW417042B (en) Method of making attenuated phase shift mask
KR100277896B1 (en) Mask manufacturing method of semiconductor device
JPH09232217A (en) Formation method for resist pattern
KR970016762A (en) How to make a half-tone phase reversal mask
KR970048951A (en) Half-tone partial phase inversion mask and manufacturing method thereof
KR950024261A (en) Rim type phase inversion mask and manufacturing method thereof
KR0123241B1 (en) Photo-mask and fabrication method
KR950027920A (en) Mask manufacturing method for semiconductor
JPH01130527A (en) Formation of resist pattern

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20090526

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee