KR980002293A - 동합금 및 철-니켈 합금 소재에 팔라듐 또는 팔라듐 합금을 무전해 도금으로 하는 방법 - Google Patents

동합금 및 철-니켈 합금 소재에 팔라듐 또는 팔라듐 합금을 무전해 도금으로 하는 방법 Download PDF

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KR980002293A
KR980002293A KR1019960021970A KR19960021970A KR980002293A KR 980002293 A KR980002293 A KR 980002293A KR 1019960021970 A KR1019960021970 A KR 1019960021970A KR 19960021970 A KR19960021970 A KR 19960021970A KR 980002293 A KR980002293 A KR 980002293A
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palladium
plating
mixtures
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alloy
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KR100186952B1 (ko
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문성수
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문성수
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • C23C18/44—Coating with noble metals using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1637—Composition of the substrate metallic substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
    • C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703—Plating
    • H05K2203/072—Electroless plating, e.g. finish plating or initial plating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
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  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Computer Hardware Design (AREA)
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  • Manufacturing & Machinery (AREA)
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Abstract

동 합금 및 철-니켈 합금 소재로 된 반도체 리드프레임, 인쇄 회로기판, 및 커넥터에 팔라듐 또는 팔라듐합금을 무전해 도금하는 방법이 개시되어 있는데, 이방법은 팔라듐 금속 5-8g/ℓ, 또는 팔라듐 금속 5-8g/ℓ및 합금 금속 1-5g/ℓ를 포함하는 수용액으로 이루어진 팔라듐 또는 팔라듐 합금 도금 조성물을 사용하여 동합금 또는 철-니켈 합금 소재의 피도금체에 팔라듐 또는 팔라듐 합금을 무전해 도금하는 방법이다.
본 발명에 따르면 은 변색 및 두꺼운 도금으로 인한 리드간의 접촉, 납에 의한 공해 문제, 불균일한 도금두께, 기계적 공정상의 자재의 휘어짐, 이에 따른 낮은 특성 문제를 해결하였으며, 내식성, 납땜성, 밀착성등이 더욱 우수한 도금층을 얻을수 있다.

Description

동합금 및 철-니켈 합금 소재에 팔라듐 또는 팔라듐 합금을 무전해 도금으로 하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (16)

  1. 팔라듐 금속 5∼8g/ℓ, 또는 팔라듐 금속 5∼8g/ℓ및 합금 금속 1∼5g/ℓ를 포함하는 수용액으로 이루어진 팔라듐 또는 팔라듐 합금 도금 조성물을 사용하여 동 합금 또는 철-니켈 합금 소재의 피도금체에 팔라듐 또는 팔라듐 합금을 무전해 도금하는 방법.
  2. 제1항에 있어서, 상기 합금 금속은 금, 주석 또는 은인 것을 특징으로 하는 방법.
  3. 제2항에 있어서, 상기 금은 테트라클로로금(Ⅲ) 칼륨, 산화금(Ⅲ), 시안화금(Ⅰ) 칼륨 및 이들의 혼합물로 구성된 군중에서 선택되는 것을 특징으로 하는 방법.
  4. 제2항에 있어서, 상기 주석은 옥실산 제1주석, 염화 제1주석 이수화물, 주석산칼륨 및 이들의 혼합물로 구성된 군중에서 선택되는 것을 특징으로 하는 방법.
  5. 제2항에 있어서, 상기 은은 시안화은 (Ⅰ)칼륨, 염화은, 질산은 및 이들의 혼합물로 구성된 군중에서 선택되는 것을 특징으로 하는 방법.
  6. 제1항에 있어서, 상기 팔라듐은 디암모늄디염화팔라듐, 테트라암모늄 디염화팔라듐, 염화팔라듐, 아세트산팔라듐, 디암모늄 디아미노 팔라듐 및 이들의 혼합물로 구성된 군중에서 선택되는 것을 특징으로 하는 방법.
  7. 제1항에 있어서, 상기 수용액이 하나 이상의 착화제 5∼100g/ℓ, 환원제 20∼60g/ℓ, 안정제 1∼10g/ℓ, 및 가속제 0.01∼2g/ℓ를 포함하는 것을 특징으로 하는 방법.
  8. 제7항에 있어서, 상기 착화제가 암모니아수, 염산, 히드라진 및 이들의 혼합물로 구성된 군 중에서 선택되는 것을 특징으로 하는 방법.
  9. 제7항에 있어서, 상기 환원제는 에틸렌디아민테트라아세트산 2 나트륨염, 글리콘산, 차아린산소다, 에테르히드라진 및 이들의 혼합물로 구성된 군 중에서 선택되는 것을 특징으로 하는 방법.
  10. 제7항에 있어서, 상기 안정제는 에틸렌디아민, 티오황산소다, 피로린산나트륨, N,N′-P-페닐-설폰산- C-어켑토포마잔 및 이들의 혼합물로 구성된 군 중에서 선택되는 것을 특징으로 하는 방법.
  11. 제7항에 있어서, 상기 가속제는 3-하드록시-4-메틸설폰산, 3,4-디메톡시벤조산 및 이들의 혼합물로 구성된 군 중에서 선택되는 것을 특징으로 하는 방법.
  12. 제1항에 있어서, 상기 파도금체를 상기 도금 조성물 용액에 담그고 도금 조성물 용액의 온도를 60∼85℃로 유지하면서 도금층을 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
  13. 제1항에 있어서, 상기 피도금체가 무전해 동도금 및 무전해 니켈 도금된 것임을 특징으로 하는 방법.
  14. 제1항에 있어서, 상기 피도금체가 반도체 리드프레임인 것을 특징으로 하는 방법.
  15. 제1항에 있어서, 상기 피도금체가 인쇄회로기판인 것을 특징으로 하는 방법.
  16. 제1항에 있어서, 상기 피도금체가 커넥터인 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960021970A 1996-06-18 1996-06-18 동합금 및 철-니켈 합금 소재에 팔라듐 또는 팔라듐 합금을 무전해 도금하는 방법 KR100186952B1 (ko)

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KR1019960021970A KR100186952B1 (ko) 1996-06-18 1996-06-18 동합금 및 철-니켈 합금 소재에 팔라듐 또는 팔라듐 합금을 무전해 도금하는 방법

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KR1019960021970A KR100186952B1 (ko) 1996-06-18 1996-06-18 동합금 및 철-니켈 합금 소재에 팔라듐 또는 팔라듐 합금을 무전해 도금하는 방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100587188B1 (ko) * 1998-05-13 2006-08-30 더 스탠다드 오일 캄파니 수성아크릴로니트릴공정스트림의처리및/또는조작에의한산화체감소

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100442519B1 (ko) * 2002-04-09 2004-07-30 삼성전기주식회사 모듈화 인쇄회로기판의 표면처리용 합금 도금액

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100587188B1 (ko) * 1998-05-13 2006-08-30 더 스탠다드 오일 캄파니 수성아크릴로니트릴공정스트림의처리및/또는조작에의한산화체감소

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