KR970703032A - 전기적으로 프로그램가능하며 소거가능한 고속의 비휘발성 셀 및 셀 작동방법(high-speed, non-volatile electrically programmable and erasable cell and method) - Google Patents

전기적으로 프로그램가능하며 소거가능한 고속의 비휘발성 셀 및 셀 작동방법(high-speed, non-volatile electrically programmable and erasable cell and method)

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Publication number
KR970703032A
KR970703032A KR1019960706002A KR19960706002A KR970703032A KR 970703032 A KR970703032 A KR 970703032A KR 1019960706002 A KR1019960706002 A KR 1019960706002A KR 19960706002 A KR19960706002 A KR 19960706002A KR 970703032 A KR970703032 A KR 970703032A
Authority
KR
South Korea
Prior art keywords
cell
erasable
volatile
electrically programmable
speed
Prior art date
Application number
KR1019960706002A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR970703032A publication Critical patent/KR970703032A/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
KR1019960706002A 1994-04-29 1996-10-25 전기적으로 프로그램가능하며 소거가능한 고속의 비휘발성 셀 및 셀 작동방법(high-speed, non-volatile electrically programmable and erasable cell and method) KR970703032A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23536194A 1994-04-29 1994-04-29
PCT/US1995/005316 WO1995030226A1 (en) 1994-04-29 1995-04-28 High-speed, non-volatile electrically programmable and erasable cell and method

Publications (1)

Publication Number Publication Date
KR970703032A true KR970703032A (ko) 1997-06-10

Family

ID=22885182

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960706002A KR970703032A (ko) 1994-04-29 1996-10-25 전기적으로 프로그램가능하며 소거가능한 고속의 비휘발성 셀 및 셀 작동방법(high-speed, non-volatile electrically programmable and erasable cell and method)

Country Status (5)

Country Link
US (1) US5680346A (ko)
EP (1) EP0757835A1 (ko)
JP (1) JPH09512658A (ko)
KR (1) KR970703032A (ko)
WO (1) WO1995030226A1 (ko)

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JPH09198880A (ja) * 1996-01-22 1997-07-31 Toshiba Corp 不揮発性半導体メモリ
US5847998A (en) * 1996-12-20 1998-12-08 Advanced Micro Devices, Inc. Non-volatile memory array that enables simultaneous read and write operations
TW337607B (en) 1997-08-06 1998-08-01 Mos Electronics Taiwan Inc Process for forming a contact hole in an EEPROM with NOR construction
US6040216A (en) * 1997-08-11 2000-03-21 Mosel Vitelic, Inc. Method (and device) for producing tunnel silicon oxynitride layer
KR100439837B1 (ko) * 1997-09-03 2004-09-18 삼성전자주식회사 고속 재기록용 비휘발성 메모리 장치 및 그 제조 방법
TW425660B (en) 1997-12-12 2001-03-11 Mosel Vitelic Inc Method of forming uniform dielectric layer between two conductive layers in integrated circuit
TW374939B (en) 1997-12-19 1999-11-21 Promos Technologies Inc Method of formation of 2 gate oxide layers of different thickness in an IC
TW382801B (en) 1998-02-25 2000-02-21 Mosel Vitelic Inc Method of forming two transistors having different threshold voltage in integrated circuit
TW480713B (en) * 1998-03-03 2002-03-21 Mosel Vitelic Inc Method for forming different thickness of field oxide in integrated circuit and the structure of the same
US6136653A (en) 1998-05-11 2000-10-24 Mosel Vitelic, Inc. Method and device for producing undercut gate for flash memory
US6261903B1 (en) 1998-05-14 2001-07-17 Mosel Vitelic, Inc. Floating gate method and device
US6365455B1 (en) 1998-06-05 2002-04-02 Mosel Vitelic, Inc. Flash memory process using polysilicon spacers
JP3999900B2 (ja) * 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
US6208559B1 (en) 1999-11-15 2001-03-27 Lattice Semiconductor Corporation Method of operating EEPROM memory cells having transistors with thin gate oxide and reduced disturb
WO2005017909A1 (ja) * 2003-08-18 2005-02-24 Fujitsu Limited 不揮発性半導体メモリ
US7092293B1 (en) * 2003-11-25 2006-08-15 Xilinx, Inc. Non-volatile memory cell integrated with a latch
US20070247915A1 (en) * 2006-04-21 2007-10-25 Intersil Americas Inc. Multiple time programmable (MTP) PMOS floating gate-based non-volatile memory device for a general-purpose CMOS technology with thick gate oxide
US7903465B2 (en) * 2007-04-24 2011-03-08 Intersil Americas Inc. Memory array of floating gate-based non-volatile memory cells
US7688627B2 (en) * 2007-04-24 2010-03-30 Intersil Americas Inc. Flash memory array of floating gate-based non-volatile memory cells
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US9171634B2 (en) * 2013-03-14 2015-10-27 Arm Limited Memory device and method of controlling leakage current within such a memory device
WO2015084393A1 (en) * 2013-12-06 2015-06-11 Hewlett-Packard Development Company, L.P. Semiconductor device having non-volatile memory with short-channeled transistors
CN104157307B (zh) * 2014-08-13 2017-09-29 芯成半导体（上海）有限公司 闪存及其读取方法
US9634015B2 (en) * 2015-08-18 2017-04-25 Ememory Technology Inc. Antifuse-type one time programming memory cell and array structure with same
KR102401056B1 (ko) 2015-09-25 2022-05-24 에스케이하이닉스 주식회사 메모리 장치 및 이의 동작 방법

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US4094012A (en) * 1976-10-01 1978-06-06 Intel Corporation Electrically programmable MOS read-only memory with isolated decoders
US4380804A (en) * 1980-12-29 1983-04-19 Ncr Corporation Earom cell matrix and logic arrays with common memory gate
US4486859A (en) * 1982-02-19 1984-12-04 International Business Machines Corporation Electrically alterable read-only storage cell and method of operating same
US4611309A (en) * 1984-09-24 1986-09-09 Advanced Micro Devices, Inc. Non-volatile dynamic RAM cell
US4695979A (en) * 1985-09-09 1987-09-22 Texas Instruments Incorporated Modified four transistor EEPROM cell
JPS62266793A (ja) * 1986-05-13 1987-11-19 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH0777078B2 (ja) * 1987-01-31 1995-08-16 株式会社東芝 不揮発性半導体メモリ
US5005155A (en) * 1988-06-15 1991-04-02 Advanced Micro Devices, Inc. Optimized electrically erasable PLA cell for minimum read disturb
US5101378A (en) * 1988-06-15 1992-03-31 Advanced Micro Devices, Inc. Optimized electrically erasable cell for minimum read disturb and associated method of sensing
US5075885A (en) * 1988-12-21 1991-12-24 National Semiconductor Corporation Ecl eprom with cmos programming
US5081054A (en) * 1989-04-03 1992-01-14 Atmel Corporation Fabrication process for programmable and erasable MOS memory device
WO1990015412A1 (en) * 1989-06-08 1990-12-13 Sierra Semiconductor Corporation A high reliability non-volatile memory circuit and structure
US5170373A (en) * 1989-10-31 1992-12-08 Sgs-Thomson Microelectronics, Inc. Three transistor eeprom cell
US5086325A (en) * 1990-11-21 1992-02-04 Atmel Corporation Narrow width EEPROM with single diffusion electrode formation
US5331590A (en) * 1991-10-15 1994-07-19 Lattice Semiconductor Corporation Single poly EE cell with separate read/write paths and reduced product term coupling
EP1032034A1 (en) * 1992-01-22 2000-08-30 Macronix International Co., Ltd. Method of making memory device
US5379254A (en) * 1992-10-20 1995-01-03 National Semiconductor Corporation Asymmetrical alternate metal virtual ground EPROM array
US5329487A (en) * 1993-03-08 1994-07-12 Altera Corporation Two transistor flash EPROM cell

Also Published As

Publication number Publication date
EP0757835A4 (en) 1996-11-22
JPH09512658A (ja) 1997-12-16
US5680346A (en) 1997-10-21
WO1995030226A1 (en) 1995-11-09
EP0757835A1 (en) 1997-02-12

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