KR970077355A - Method of forming high-voltage gate oxide film - Google Patents
Method of forming high-voltage gate oxide film Download PDFInfo
- Publication number
- KR970077355A KR970077355A KR1019960017773A KR19960017773A KR970077355A KR 970077355 A KR970077355 A KR 970077355A KR 1019960017773 A KR1019960017773 A KR 1019960017773A KR 19960017773 A KR19960017773 A KR 19960017773A KR 970077355 A KR970077355 A KR 970077355A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- gate oxide
- voltage gate
- layer
- voltage
- Prior art date
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 고전압 게이트 산화막의 형성 방법에 관한 것으로서, 필드 산화막이 형성되어 있는 반도체 기판과 그 반도체 기판 상면에 고전압 게이트 산화막이 형성되어 있고, 고전압 게이트 산화막 상면에 다결정 실리콘 게이트층을 디포지션 하고, 그 다결정 실리콘 게이트층 상면에 게이트 영역이 될 부분을 포토 마스킹을 실시하고, 상기 포토 마스크로 노출된 부위의 상기 다결정 실리콘 게이트층과 상기 고전압 게이트 산화막층을 식각하고 상기 포토 마스크를 제거하고, 상기 기판을 예비산화하여 고전압 게이트 산화막을 제조 함으로서, 종래 기술 보다 사진 공정을 한단계 줄여 생산성 및 원가를 절감하는 이점(利點)을 제공한다.The present invention relates to a method of forming a high-voltage gate oxide film, and more particularly, to a method of forming a high-voltage gate oxide film by forming a semiconductor substrate on which a field oxide film is formed and a high-voltage gate oxide film on the semiconductor substrate, Photomasking a portion of the polysilicon gate layer to be a gate region, etching the polysilicon gate layer and the high-voltage gate oxide layer exposed by the photomask, removing the photomask, By pre-oxidizing to form a high-voltage gate oxide film, the photolithography process is reduced by one step compared to the prior art, thereby providing an advantage of reducing productivity and cost.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2도는 본 발명에 의한 고전압 게이트 산화막을 제조하는 공정을 나타내는 단면도.FIG. 2 is a cross-sectional view showing a step of manufacturing a high-voltage gate oxide film according to the present invention. FIG.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960017773A KR970077355A (en) | 1996-05-23 | 1996-05-23 | Method of forming high-voltage gate oxide film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960017773A KR970077355A (en) | 1996-05-23 | 1996-05-23 | Method of forming high-voltage gate oxide film |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970077355A true KR970077355A (en) | 1997-12-12 |
Family
ID=66220347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960017773A KR970077355A (en) | 1996-05-23 | 1996-05-23 | Method of forming high-voltage gate oxide film |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970077355A (en) |
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1996
- 1996-05-23 KR KR1019960017773A patent/KR970077355A/en not_active Application Discontinuation
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