KR970077199A - Method for forming wiring layer of semiconductor device - Google Patents
Method for forming wiring layer of semiconductor device Download PDFInfo
- Publication number
- KR970077199A KR970077199A KR1019960015596A KR19960015596A KR970077199A KR 970077199 A KR970077199 A KR 970077199A KR 1019960015596 A KR1019960015596 A KR 1019960015596A KR 19960015596 A KR19960015596 A KR 19960015596A KR 970077199 A KR970077199 A KR 970077199A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- buffer layer
- semiconductor device
- wiring layer
- barrier metal
- Prior art date
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Abstract
본 발명에 의한 반도체 소자의 배선층 형성 방법은 배리어 메탈상에 Si이 함유된 금속막으로 버퍼층을 형성한 후 CVD-W막을 형성함으로써, 스몰(small) 콘택을 갖는 고단차 구조의 반도체 소자에서 밀착층의 취약한 단차 도포성으로 인해 콘택홀 바닥에 계면 결함(Interfacial Defect, 예를 들어 윔홀(Worm Hole))이 발생하는 것을 막고, 이로 인해 양호한 전기적 특성을 얻을 수 있다는 장점이 있다.In the method for forming a wiring layer of a semiconductor device according to the present invention, a buffer layer is formed of a metal film containing Si on a barrier metal and then a CVD-W film is formed. In the semiconductor element having a high- (Worm Hole) is prevented from occurring at the bottom of the contact hole due to the weak step coverage of the contact hole, thereby obtaining good electrical characteristics.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2도 내지 제4도는 본 발명에 의한 반도체 소자의 배선층 형성 방법을 순차적으로 도시한 단면도들이다.FIGS. 2 to 4 are sectional views sequentially showing a method for forming a wiring layer of a semiconductor device according to the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960015596A KR970077199A (en) | 1996-05-11 | 1996-05-11 | Method for forming wiring layer of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960015596A KR970077199A (en) | 1996-05-11 | 1996-05-11 | Method for forming wiring layer of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970077199A true KR970077199A (en) | 1997-12-12 |
Family
ID=66220031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960015596A KR970077199A (en) | 1996-05-11 | 1996-05-11 | Method for forming wiring layer of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970077199A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100906307B1 (en) * | 2002-11-21 | 2009-07-07 | 매그나칩 반도체 유한회사 | Method of manufacturing a semiconductor device |
-
1996
- 1996-05-11 KR KR1019960015596A patent/KR970077199A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100906307B1 (en) * | 2002-11-21 | 2009-07-07 | 매그나칩 반도체 유한회사 | Method of manufacturing a semiconductor device |
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