KR970072195A - Wafer heating method - Google Patents

Wafer heating method Download PDF

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Publication number
KR970072195A
KR970072195A KR1019960009692A KR19960009692A KR970072195A KR 970072195 A KR970072195 A KR 970072195A KR 1019960009692 A KR1019960009692 A KR 1019960009692A KR 19960009692 A KR19960009692 A KR 19960009692A KR 970072195 A KR970072195 A KR 970072195A
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KR
South Korea
Prior art keywords
wafer
heating
heating method
present
chamber
Prior art date
Application number
KR1019960009692A
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Korean (ko)
Inventor
김훈기
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960009692A priority Critical patent/KR970072195A/en
Publication of KR970072195A publication Critical patent/KR970072195A/en

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Abstract

본 발명은 웨이퍼 가열방법에 관해 개시한다. 본 발명에 의한 웨이퍼 가열방법은 주 반응챔버내의 서셉터(susceptor)상에서 웨이퍼를 가열방법에 있어서, 상기 웨이퍼는 상기 서셉터를 이용하여 본격적으로 가열하기 전에 다른 챔버에서 일정온도까지 1차적으로 가열하는 것을 특징으로 한다.The present invention discloses a wafer heating method. A wafer heating method according to the present invention is a method for heating a wafer on a susceptor in a main reaction chamber, wherein the wafer is firstly heated to a predetermined temperature in another chamber before full heating using the susceptor .

본 발명은 웨이퍼를 주 반응챔버에서 본격적으로 가열하기 전에 다른 챔버에서 그 보다 낮은 온도로 미리 가열한다. 이렇게 함으로써, 주반응챔버에서 막질 형성에 필요한 설정온도까지 웨이퍼를 가열하는 시간을 줄여서 웨이퍼 상에 안정적인 막을 연속적으로 형성 할 수 있다.The present invention preheats the wafer to a lower temperature in the other chamber before the wafer is fully heated in the main reaction chamber. By doing so, it is possible to continuously form a stable film on the wafer by reducing the time for heating the wafer to the set temperature necessary for film formation in the main reaction chamber.

이와 같은 이유로 인해 본 발명에 의한 웨이퍼 가열방법을 사용하면 웨이퍼 상에 안전적으로 반도체소자들을 형성하면서도 반도체장치의 생산성을 높일 수 있다.For this reason, when the wafer heating method according to the present invention is used, the productivity of the semiconductor device can be improved while forming the semiconductor devices on the wafer safely.

Description

웨이퍼 가열방법Wafer heating method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 웨이퍼 가열방법을 설명하기 위한 도면이다.FIG. 1 is a view for explaining a wafer heating method. FIG.

Claims (3)

주 반응챔버내의 서셉터(susceptor)상에서 웨이퍼를 가열하는 웨이퍼 가열방법에 있어서, 상기 웨이퍼는 상기 서셉터를 이용하여 본격적으로 가열하기 전에 다른 챔버에서 일정온도까지 1차적으로 가열하는 것을 특징으로 하는 웨이퍼 가열방법.A wafer heating method for heating a wafer on a susceptor in a main reaction chamber, characterized in that the wafer is primarily heated to a predetermined temperature in another chamber before being heated by using the susceptor Heating method. 제1항에 있어서, 상기 다른 챔버로는 얼라이너 챔버를 사용하는 것을 특징으로 하는 웨이퍼 가열방법.The method of claim 1, wherein the other chamber is an aligner chamber. 제2항에 있어서, 상기 웨이퍼는 다른데서 1차 가열한 후 상기 얼라이너 챔버에서 2차적으로 가열하는 것을 특징으로 하는 웨이퍼 가열방법.The wafer heating method according to claim 2, characterized in that the wafer is firstly heated in another place, and then secondarily heated in the aligner chamber. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960009692A 1996-04-01 1996-04-01 Wafer heating method KR970072195A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960009692A KR970072195A (en) 1996-04-01 1996-04-01 Wafer heating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960009692A KR970072195A (en) 1996-04-01 1996-04-01 Wafer heating method

Publications (1)

Publication Number Publication Date
KR970072195A true KR970072195A (en) 1997-11-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960009692A KR970072195A (en) 1996-04-01 1996-04-01 Wafer heating method

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KR (1) KR970072195A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101233588B1 (en) * 2009-11-30 2013-02-15 미츠비시 쥬고교 가부시키가이샤 Bonding method, bonding apparatus, and bonding system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101233588B1 (en) * 2009-11-30 2013-02-15 미츠비시 쥬고교 가부시키가이샤 Bonding method, bonding apparatus, and bonding system

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