KR970072195A - Wafer heating method - Google Patents
Wafer heating method Download PDFInfo
- Publication number
- KR970072195A KR970072195A KR1019960009692A KR19960009692A KR970072195A KR 970072195 A KR970072195 A KR 970072195A KR 1019960009692 A KR1019960009692 A KR 1019960009692A KR 19960009692 A KR19960009692 A KR 19960009692A KR 970072195 A KR970072195 A KR 970072195A
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- South Korea
- Prior art keywords
- wafer
- heating
- heating method
- present
- chamber
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Abstract
본 발명은 웨이퍼 가열방법에 관해 개시한다. 본 발명에 의한 웨이퍼 가열방법은 주 반응챔버내의 서셉터(susceptor)상에서 웨이퍼를 가열방법에 있어서, 상기 웨이퍼는 상기 서셉터를 이용하여 본격적으로 가열하기 전에 다른 챔버에서 일정온도까지 1차적으로 가열하는 것을 특징으로 한다.The present invention discloses a wafer heating method. A wafer heating method according to the present invention is a method for heating a wafer on a susceptor in a main reaction chamber, wherein the wafer is firstly heated to a predetermined temperature in another chamber before full heating using the susceptor .
본 발명은 웨이퍼를 주 반응챔버에서 본격적으로 가열하기 전에 다른 챔버에서 그 보다 낮은 온도로 미리 가열한다. 이렇게 함으로써, 주반응챔버에서 막질 형성에 필요한 설정온도까지 웨이퍼를 가열하는 시간을 줄여서 웨이퍼 상에 안정적인 막을 연속적으로 형성 할 수 있다.The present invention preheats the wafer to a lower temperature in the other chamber before the wafer is fully heated in the main reaction chamber. By doing so, it is possible to continuously form a stable film on the wafer by reducing the time for heating the wafer to the set temperature necessary for film formation in the main reaction chamber.
이와 같은 이유로 인해 본 발명에 의한 웨이퍼 가열방법을 사용하면 웨이퍼 상에 안전적으로 반도체소자들을 형성하면서도 반도체장치의 생산성을 높일 수 있다.For this reason, when the wafer heating method according to the present invention is used, the productivity of the semiconductor device can be improved while forming the semiconductor devices on the wafer safely.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제1도는 웨이퍼 가열방법을 설명하기 위한 도면이다.FIG. 1 is a view for explaining a wafer heating method. FIG.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960009692A KR970072195A (en) | 1996-04-01 | 1996-04-01 | Wafer heating method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960009692A KR970072195A (en) | 1996-04-01 | 1996-04-01 | Wafer heating method |
Publications (1)
Publication Number | Publication Date |
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KR970072195A true KR970072195A (en) | 1997-11-07 |
Family
ID=66222683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960009692A KR970072195A (en) | 1996-04-01 | 1996-04-01 | Wafer heating method |
Country Status (1)
Country | Link |
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KR (1) | KR970072195A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101233588B1 (en) * | 2009-11-30 | 2013-02-15 | 미츠비시 쥬고교 가부시키가이샤 | Bonding method, bonding apparatus, and bonding system |
-
1996
- 1996-04-01 KR KR1019960009692A patent/KR970072195A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101233588B1 (en) * | 2009-11-30 | 2013-02-15 | 미츠비시 쥬고교 가부시키가이샤 | Bonding method, bonding apparatus, and bonding system |
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