KR860004173A - Vapor Phase Reaction Device - Google Patents

Vapor Phase Reaction Device Download PDF

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Publication number
KR860004173A
KR860004173A KR1019850007243A KR850007243A KR860004173A KR 860004173 A KR860004173 A KR 860004173A KR 1019850007243 A KR1019850007243 A KR 1019850007243A KR 850007243 A KR850007243 A KR 850007243A KR 860004173 A KR860004173 A KR 860004173A
Authority
KR
South Korea
Prior art keywords
vapor phase
reaction device
phase reaction
wafer
susceptor
Prior art date
Application number
KR1019850007243A
Other languages
Korean (ko)
Other versions
KR930007854B1 (en
Inventor
히사오 하야시 (외 2)
Original Assignee
오오가 노리오
쏘니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오오가 노리오, 쏘니 가부시기가이샤 filed Critical 오오가 노리오
Publication of KR860004173A publication Critical patent/KR860004173A/en
Application granted granted Critical
Publication of KR930007854B1 publication Critical patent/KR930007854B1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음No content

Description

기상반응장치(氣相反應裝置)Vapor Phase Reaction Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본원 발명의 일실시예를 나타낸 측단면도.Figure 1 is a side cross-sectional view showing an embodiment of the present invention.

제2도는 제1도 Ⅱ-Ⅱ선에 있어서의 단면도.2 is a cross-sectional view taken along the line II-II of FIG. 1;

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

3 : 서셉터 4 : 고주파유도코일3: susceptor 4: high frequency induction coil

8 : 웨이퍼8: wafer

Claims (1)

수평에 대해 경사지도록 배설되어 있는 판상(板狀)의 서셉터(suscepter)와, 이 서셉터의 웨이퍼재치면과는 반대측에 배설되어 있는 고주파유도코일을 각기 구비하며, 상기 웨이퍼재치면에 재치되어 있는 웨이퍼를 상기 고주파유도코일에 의해 상기 서셉터를 통해 가열하도록 한 기상반응장치.And a plate-shaped susceptor disposed so as to be inclined with respect to the horizontal, and a high frequency induction coil disposed on a side opposite to the wafer placing surface of the susceptor, respectively. And a wafer for heating the wafer through the susceptor by the high frequency induction coil. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019850007243A 1984-11-16 1985-09-30 Gas-phase reactor KR930007854B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP84-241917 1984-11-16
JP59241917A JPS61122194A (en) 1984-11-16 1984-11-16 Gas-phase reactor

Publications (2)

Publication Number Publication Date
KR860004173A true KR860004173A (en) 1986-06-18
KR930007854B1 KR930007854B1 (en) 1993-08-20

Family

ID=17081470

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850007243A KR930007854B1 (en) 1984-11-16 1985-09-30 Gas-phase reactor

Country Status (2)

Country Link
JP (1) JPS61122194A (en)
KR (1) KR930007854B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101431197B1 (en) * 2008-01-24 2014-09-17 삼성전자주식회사 Equipment for depositing atomic layer
JP4745447B2 (en) * 2010-02-04 2011-08-10 キヤノンアネルバ株式会社 Substrate transfer apparatus and vacuum processing apparatus

Also Published As

Publication number Publication date
KR930007854B1 (en) 1993-08-20
JPS61122194A (en) 1986-06-10

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