KR970071128A - Method for forming a high conductivity film pattern of a semiconductor device - Google Patents
Method for forming a high conductivity film pattern of a semiconductor device Download PDFInfo
- Publication number
- KR970071128A KR970071128A KR1019960012545A KR19960012545A KR970071128A KR 970071128 A KR970071128 A KR 970071128A KR 1019960012545 A KR1019960012545 A KR 1019960012545A KR 19960012545 A KR19960012545 A KR 19960012545A KR 970071128 A KR970071128 A KR 970071128A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- film
- pattern
- high conductivity
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 9
- 238000005530 etching Methods 0.000 claims abstract 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract 5
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract 3
- 230000001590 oxidative effect Effects 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
알루미나를 식각용마스크로 이용하는 반도체 장치의 패턴형성방법에 관하여 개시한다. 본 발명은 반도체 기판 상에 고전도성막을 형성하는 단계와, 상기 고전도성막 상에 산화막을 형성하는 단계와, 상기 산화막 상에 알루미늄막을 형성하는 단계와, 상기 알루미늄막 상에 감광막 패턴을 형성하는 단계와, 상기 감광막 패턴을 마스크로 상기 알루미늄막을 식각하여 알루미늄막 패턴을 형성하는 단계와, 상기 알루미늄막 패턴의 표면을 산화시켜 식각마스크용 알루미나층을 형성하는 단계와, 상기 알루미나층을 이용하여 상기 산화막 및 고전도성막을 식각하여 산화막 패턴 및 고전도성막 패턴을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 장치의 고전도성막 패턴형성방법을 제공한다. 본 발명은 알루미나층을 식각마스크로 사용하여 고전도성막을 신뢰성있게 패터닝할 수 있다.A method of forming a pattern of a semiconductor device using alumina as an etching mask will be described. The present invention provides a method of manufacturing a semiconductor device, comprising: forming a high-conductivity film on a semiconductor substrate; forming an oxide film on the high-conductivity film; forming an aluminum film on the oxide film; Forming an aluminum film pattern by etching the aluminum film using the photoresist pattern as a mask; forming an alumina layer for an etching mask by oxidizing a surface of the aluminum film pattern; And a step of forming an oxide film pattern and a high conductivity film pattern by etching the oxide film and the high conductivity film to form a high conductivity film pattern of the semiconductor device. The present invention can reliably pattern a high conductivity film using an alumina layer as an etch mask.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제4도는 본 발명의 의도 반도체 장치의 고전도성막 패턴형성방법을 설명하기 위하여 도시한 단도면이다.FIG. 4 is a step diagram showing a method for forming a high conductivity film pattern of an intentional semiconductor device according to the present invention.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960012545A KR970071128A (en) | 1996-04-24 | 1996-04-24 | Method for forming a high conductivity film pattern of a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960012545A KR970071128A (en) | 1996-04-24 | 1996-04-24 | Method for forming a high conductivity film pattern of a semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970071128A true KR970071128A (en) | 1997-11-07 |
Family
ID=66216806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960012545A KR970071128A (en) | 1996-04-24 | 1996-04-24 | Method for forming a high conductivity film pattern of a semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970071128A (en) |
-
1996
- 1996-04-24 KR KR1019960012545A patent/KR970071128A/en not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19960424 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |