KR970067684A - 반도체 웨이퍼 습식 처리 장치 - Google Patents

반도체 웨이퍼 습식 처리 장치 Download PDF

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Publication number
KR970067684A
KR970067684A KR1019960006619A KR19960006619A KR970067684A KR 970067684 A KR970067684 A KR 970067684A KR 1019960006619 A KR1019960006619 A KR 1019960006619A KR 19960006619 A KR19960006619 A KR 19960006619A KR 970067684 A KR970067684 A KR 970067684A
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KR
South Korea
Prior art keywords
semiconductor wafer
processing apparatus
discharge
wet
supply line
Prior art date
Application number
KR1019960006619A
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English (en)
Other versions
KR100196998B1 (ko
Inventor
한석빈
Original Assignee
문정환
엘지반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 엘지반도체 주식회사 filed Critical 문정환
Priority to KR1019960006619A priority Critical patent/KR100196998B1/ko
Priority to JP9055056A priority patent/JPH1032182A/ja
Priority to US08/814,236 priority patent/US5873381A/en
Publication of KR970067684A publication Critical patent/KR970067684A/ko
Application granted granted Critical
Publication of KR100196998B1 publication Critical patent/KR100196998B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 반도체 디바이스 제조 공정에서 반도체 웨이퍼의 세정 등의 습식처리를 수행하는 반도체 웨이퍼 처리장치에 관한 것으로, 처리액 공급라인과 처리액 공급라인이 하부에 연결되고, 측별 내면 상호 간 및 측벽내면과 바닥 내면이 접하는 부위가 곡면을 이루고 상면이 개구되어, 처리액 공급라인으로부터 유입된 처리액이 넘쳐흐르는 처리조와, 처리조 측벽 둘레에 형성된 배출도랑과 배출도랑 하부에 연결되는 배출라인을 포함하여 이루어진다.

Description

반도체 웨이퍼 습식 처리 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 반도체 웨이퍼 습식 처리장치의 일실시예를 도시한 사시도

Claims (6)

  1. 반도체 웨이퍼가 입조(入槽)되는 처리조를 포함하여 이루어진 반도체 웨이퍼 습식 처리장치에 있어서, 상기 처리조의 측벽 내면 상호 간 및 측벽 내면과 바닥 내면이 접하는 부위가 곡면을 이루는 것이 특징인 반도체 웨이퍼 습식 처리 장치.
  2. 반도체 웨이퍼를 입조(入槽)시켜서 처리하는 반도체 웨이퍼 습식 처리장치에 있어서, 처리액 공급라인; 상기 처리액 공급라인이 하부에 연결되고, 측벽 내면 상호간 및 측벽 내면과 바닥 내면이 접하는 부위가 곡면을 이루고, 상면이 개구되어, 상기 처리액 공급라인으로부터 유입된 처리액이 넘쳐흐르는 처리조; 상기 처리조 측벽 둘레에 형성된 배출도랑;과 상기 배출도랑 하부에 연결되는 배출라인을 포함하여 이루어진 반도체 웨이퍼 습식 처리 장치.
  3. 제2항에 있어서, 상기 처리액 공급라인은 내면이 상기 처리조 내면과 연결되는 부위가 곡면을 이루는 것이 특징인 반도체 웨이퍼 습식 처리 장치.
  4. 제3항에 있어서, 상기 배출도랑은 적어도 바닥 내면이 바깥쪽으로 볼록한 곡면이거나, 내측면 상호간 및 내측면과 바닥 내면이 접하는 부위가 곡면을 이루는 것이 특징인 반도체 웨이퍼 습식 처리 장치.
  5. 제3항에 있어서, 상기 배출라인은 내면이 상기 배출도랑 내면과 연결되는 부위에 곡면을 이루는 것이 특징인 반도체 웨이퍼 습식 처리 장치.
  6. 제3항에 있어서, 상기 공급라인과 배출라인은 처리액의 유속이 변하는 부위 및 흐름 방향이 변하는 부위의 내명는 곡면으로 형성된 것이 특징인 반도체 웨이퍼 습식 처리 장치.
KR1019960006619A 1996-03-13 1996-03-13 반도체 웨이퍼 습식 처리 장치 KR100196998B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019960006619A KR100196998B1 (ko) 1996-03-13 1996-03-13 반도체 웨이퍼 습식 처리 장치
JP9055056A JPH1032182A (ja) 1996-03-13 1997-03-10 半導体ウェーハ湿式処理装置
US08/814,236 US5873381A (en) 1996-03-13 1997-03-11 Wet treatment apparatus for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960006619A KR100196998B1 (ko) 1996-03-13 1996-03-13 반도체 웨이퍼 습식 처리 장치

Publications (2)

Publication Number Publication Date
KR970067684A true KR970067684A (ko) 1997-10-13
KR100196998B1 KR100196998B1 (ko) 1999-06-15

Family

ID=19452951

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960006619A KR100196998B1 (ko) 1996-03-13 1996-03-13 반도체 웨이퍼 습식 처리 장치

Country Status (3)

Country Link
US (1) US5873381A (ko)
JP (1) JPH1032182A (ko)
KR (1) KR100196998B1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6358325B1 (en) 1997-08-22 2002-03-19 Micron Technology, Inc. Polysilicon-silicon dioxide cleaning process performed in an integrated cleaner with scrubber
JP3075350B2 (ja) * 1997-12-03 2000-08-14 日本電気株式会社 薬液処理方法および薬液処理装置
US6004401A (en) 1998-03-02 1999-12-21 Micron Technology Inc Method for cleaning a semiconductor structure
TWI240763B (en) * 2001-05-16 2005-10-01 Ind Tech Res Inst Liquid phase deposition production method and device
US6551412B1 (en) * 2001-07-16 2003-04-22 Taiwan Semiconductor Manufacturing Company Non-tubular type recycle system of wet bench tank

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3937236A (en) * 1974-10-07 1976-02-10 Mdt Chemical Company Ultrasonic cleaning device
US3950184A (en) * 1974-11-18 1976-04-13 Texas Instruments Incorporated Multichannel drainage system
JPS5861632A (ja) * 1981-10-07 1983-04-12 Matsushita Electric Ind Co Ltd 洗浄槽
JPH084063B2 (ja) * 1986-12-17 1996-01-17 富士通株式会社 半導体基板の保存方法
US4955402A (en) * 1989-03-13 1990-09-11 P.C.T. Systems, Inc. Constant bath system with weir
JP3194209B2 (ja) * 1992-11-10 2001-07-30 東京エレクトロン株式会社 洗浄処理装置

Also Published As

Publication number Publication date
KR100196998B1 (ko) 1999-06-15
JPH1032182A (ja) 1998-02-03
US5873381A (en) 1999-02-23

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