KR970055234A - Low voltage oscillation circuit of semiconductor device - Google Patents

Low voltage oscillation circuit of semiconductor device Download PDF

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Publication number
KR970055234A
KR970055234A KR1019950057094A KR19950057094A KR970055234A KR 970055234 A KR970055234 A KR 970055234A KR 1019950057094 A KR1019950057094 A KR 1019950057094A KR 19950057094 A KR19950057094 A KR 19950057094A KR 970055234 A KR970055234 A KR 970055234A
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KR
South Korea
Prior art keywords
oscillation circuit
semiconductor device
low voltage
input
terminal
Prior art date
Application number
KR1019950057094A
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Korean (ko)
Inventor
임준혁
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950057094A priority Critical patent/KR970055234A/en
Publication of KR970055234A publication Critical patent/KR970055234A/en

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Abstract

본 발명은 반도체장치의 발진회로에 관한 것으로, 특히 저전압에서 구동할 수 있는 반도체장치의 발진회로에 관한 것이다. 본 발명은 수정진동자에 입력단과 출력단이 접속되고, 상기 입력단과 출력단 사이에 병렬접속되는 저항과 증폭단을 구비하는 반도체장치의 발진회로에 있어서, 상기 증폭단에 Pseudo 인버터를 사용하는 것을 특징으로 한다.The present invention relates to an oscillation circuit of a semiconductor device, and more particularly to an oscillation circuit of a semiconductor device that can be driven at a low voltage. The present invention is characterized in that a pseudo inverter is used in the oscillation circuit of a semiconductor device having an input stage and an output stage connected to a crystal oscillator, and a resistor and an amplifier stage connected in parallel between the input stage and the output stage.

따라서 본 발명은 발진회로의 증폭단에 Pseudo 인버터를 사용함으로써, 저전압에서 동작할 수 있는 장점이 있다.Therefore, the present invention has the advantage of operating at a low voltage by using a pseudo inverter in the amplifier stage of the oscillation circuit.

Description

반도체장치의 저전압용 발진회로Low voltage oscillation circuit of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 Pseudo NMOS 인버터의 증폭기를 이용한 발진회로의 회로도이다.2 is a circuit diagram of an oscillation circuit using an amplifier of a pseudo NMOS inverter according to the present invention.

Claims (3)

수정진동자에 입력단과 출력단이 접속되고, 상기 입력단과 출력단 사이에 병렬접속되는 저항과 증폭단을 구비하는 반도체장치의 발진회로에 있어서, 상기 증폭단에 Pseudo 인버터를 사용하는 것을 특징으로 하는 반도체장치의 저전압용 발진회로.An oscillation circuit of a semiconductor device having an input terminal and an output terminal connected to a crystal oscillator and having a resistor and an amplifier terminal connected in parallel between the input terminal and the output terminal, wherein a pseudo inverter is used for the amplifier terminal. Oscillation circuit. 제1항에 있어서, 상기 Pseudo 인버터는, 소오스가 공급전원(VDD)에 접속되고 게이트 및 드레인이 서로 연결되어 상기 발진회로의 출력단에서 접속되는 PMOS트랜지스터와, 드레인이 상기 PMOS트랜지스터의 드레인에 접속되고 게이트가 상기 발진회로의 입력단에 접속되며 소오스가 접지전원에 접속되는 NMOS 트랜지스터로 구성되는 것을 특징으로 하는 반도체장치의 저전압용 발진회로.The PSE transistor according to claim 1, wherein the Pseudo inverter includes a PMOS transistor having a source connected to a supply power supply (VDD), a gate and a drain connected to each other, and an output terminal of the oscillation circuit, and a drain connected to a drain of the PMOS transistor. A low voltage oscillation circuit for a semiconductor device, comprising: an NMOS transistor whose gate is connected to an input terminal of the oscillation circuit and whose source is connected to a ground power source. 제2항에 있어서, 상기 PMOS트랜지스터의 입력에 상기 NMOS트랜지스터의 입력값과 동일한 값을 시차를 달리하여 발진동작 이후 입력시킬 수 있는 것을 특징으로 하는 반도체장치의 저전압용 발진회로.3. The low voltage oscillation circuit according to claim 2, wherein the same value as the input value of the NMOS transistor can be input to the input of the PMOS transistor after the oscillation operation with a different time difference. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950057094A 1995-12-26 1995-12-26 Low voltage oscillation circuit of semiconductor device KR970055234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950057094A KR970055234A (en) 1995-12-26 1995-12-26 Low voltage oscillation circuit of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950057094A KR970055234A (en) 1995-12-26 1995-12-26 Low voltage oscillation circuit of semiconductor device

Publications (1)

Publication Number Publication Date
KR970055234A true KR970055234A (en) 1997-07-31

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950057094A KR970055234A (en) 1995-12-26 1995-12-26 Low voltage oscillation circuit of semiconductor device

Country Status (1)

Country Link
KR (1) KR970055234A (en)

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