KR970054575A - 실리콘 태양전지 및 그 제조방법 - Google Patents

실리콘 태양전지 및 그 제조방법 Download PDF

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Publication number
KR970054575A
KR970054575A KR1019950048075A KR19950048075A KR970054575A KR 970054575 A KR970054575 A KR 970054575A KR 1019950048075 A KR1019950048075 A KR 1019950048075A KR 19950048075 A KR19950048075 A KR 19950048075A KR 970054575 A KR970054575 A KR 970054575A
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South Korea
Prior art keywords
solar cell
manufacturing
silicon solar
silicon
silicon substrate
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KR1019950048075A
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English (en)
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KR100351065B1 (ko
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지일환
조영현
김동섭
이수홍
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김광호
삼성전자 주식회사
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Priority to KR1019950048075A priority Critical patent/KR100351065B1/ko
Publication of KR970054575A publication Critical patent/KR970054575A/ko
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Publication of KR100351065B1 publication Critical patent/KR100351065B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 실리콘 기판과 그 상부에 형성된 전극을 포함하는 실리콘 태양전지에 있어서, 상기 실리콘 기판의 표면이 꼭지 부분과 바닥 부분이 곡선처리된 피라미드 구조인 것을 특징으로 하는 실리콘 태양전지 및 그 제조방법을 제공한다. 본 발명에 따르면 피라미드 꼭지 부분과 바닥 부분에서의 응력감소를 반사방지막의 두께가 균일화되고, 피라미드꼭지 부분과 바닥 부분에 형성된 산화막의 안정으로, 그 부분에 전극이 형성되는 것을 방지함으로써 태양전지의 성능을 향상시킬 수 있다.

Description

실리콘 태양전지 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도 본 발명의 실리콘 태양전지에서 실리콘 기판 표면에 형성된 피라미드 구조를 나타낸 도면이다.

Claims (4)

  1. 실리콘 기판과 그 기판 상부에 형성된 전극을 포함하는 실리콘 태양전지에 있어서, 상기 실리콘 기판의 표면이 꼭지 부분과 바닥 부분이 곡선처리된 피라미드 구조인 것을 특징으로 하는 실리콘 태양전지.
  2. 실리콘 기판 표면에 피라미드 구조를 형성한 후, pn접합, 산화막 및 전극을 순차적으로 형성하는 단계를 포함하는 실리콘 태양전지의 제조방법에 있어서, pn접합을 형성하기 전에 상기 실리콘 기판 표면에 형성되어 있는 피라미드의 꼭지 부분과 바닥 부분을 곡선처리하는 단계를 더 포함하는 것을 특징으로 하는 실리콘 태양전지의 제조방법.
  3. 제2항에 있어서, 상기 피라미드 구조의 꼭지 부분과 바닥 부분의 곡선처리 단계가 10∼40중량%의 수산화나트륨 용액을 이용한 에칭방법으로 이루어진 것을 특징으로 하는 실리콘 태양전지의 제조방법.
  4. 제2항에 있어서, 상기 산화막이 산화실리콘막 또는 불화마그네슘/황와아연의 이층막인 것을 특징으로 하는 실리콘 태양전지의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950048075A 1995-12-09 1995-12-09 실리콘 태양전지 및 그 제조방법 KR100351065B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950048075A KR100351065B1 (ko) 1995-12-09 1995-12-09 실리콘 태양전지 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950048075A KR100351065B1 (ko) 1995-12-09 1995-12-09 실리콘 태양전지 및 그 제조방법

Publications (2)

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KR970054575A true KR970054575A (ko) 1997-07-31
KR100351065B1 KR100351065B1 (ko) 2002-12-12

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100408527B1 (ko) * 1996-08-30 2004-01-24 삼성전자주식회사 태양전지및그제조방법
CN102569497B (zh) * 2010-12-30 2015-02-25 北京北方微电子基地设备工艺研究中心有限责任公司 在基板上形成减反射膜的方法、太阳能电池片及制备方法
CN102185028B (zh) * 2011-04-07 2014-04-16 浙江昱辉阳光能源江苏有限公司 一种p型超大晶粒多晶硅太阳电池表面织构的制造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3216754B2 (ja) * 1994-03-16 2001-10-09 富士電機株式会社 薄膜太陽電池の製造方法

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