KR970053833A - Cylindrical Capacitor Manufacturing Method - Google Patents

Cylindrical Capacitor Manufacturing Method Download PDF

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Publication number
KR970053833A
KR970053833A KR1019950057176A KR19950057176A KR970053833A KR 970053833 A KR970053833 A KR 970053833A KR 1019950057176 A KR1019950057176 A KR 1019950057176A KR 19950057176 A KR19950057176 A KR 19950057176A KR 970053833 A KR970053833 A KR 970053833A
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KR
South Korea
Prior art keywords
conductive layer
conductive
storage electrode
forming
pattern
Prior art date
Application number
KR1019950057176A
Other languages
Korean (ko)
Inventor
신철호
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950057176A priority Critical patent/KR970053833A/en
Publication of KR970053833A publication Critical patent/KR970053833A/en

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  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

원통형 커패시터 제조방법에 관하여 기재하고 있다. 이는 스토리지 전극 콘택홀이 형성된 반도체 기판 상에 도전물을 2회로 나누어 증착하여 제1도전층, 자연산화막 및 제2도전층을 적층하여 형성하고, 상기 제2도전층을 패터닝하여 제2도전층을 패턴을 형성한 다음, 상기 제2도전층 패턴 측벽에 절연물 스페이서를 형성하고, 상기 스페이서를 마스크로 사용하여 상기 제1 및 제2도전층을 식각하여 원통형 스토리지 전극을 형성하는 것을 특징으로 한다. 따라서 종래에 비해 보다 용이하게 원통형 스토리지 전극을 형성할 수 있다.A cylindrical capacitor manufacturing method is described. The conductive material is formed by depositing two conductive materials twice on a semiconductor substrate on which a storage electrode contact hole is formed, and stacking a first conductive layer, a natural oxide film, and a second conductive layer, and patterning the second conductive layer to form a second conductive layer. After forming a pattern, an insulator spacer is formed on sidewalls of the second conductive layer pattern, and the first and second conductive layers are etched using the spacers as a mask to form cylindrical storage electrodes. Therefore, the cylindrical storage electrode can be formed more easily than in the related art.

Description

원통형 커패시터 제조방법Cylindrical Capacitor Manufacturing Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2A도 내지 제2E도는 본 발명의 일 실시예에 따른 원통형 커패시터 제조방법을 설명하기 위해 도시한 단면도들이다.2A through 2E are cross-sectional views illustrating a method of manufacturing a cylindrical capacitor according to an embodiment of the present invention.

Claims (2)

스토리지 전극 콘택홀이 형성된 반도체 기판 상에 도전물을 2회로 나누어 증착하여 제1도전층, 자연산화막 및 제2도전층을 적층하여 형성하는 단계, 상기 제2도전층을 패터닝하여 제2도전층 패턴을 형성하는 단계; 상기 제2도전층 패턴 측벽에 절연물 스페이서를 형성하는 단계; 및 상기 스페이서를 마스크로 사용하여 상기 제1 및 제2도전층을 식각하여 원통형 스토리지 전극을 형성하는 단계를 구비하는 것을 특징으로 하는 원통형 커패시터 제조방법.Depositing a conductive material twice on a semiconductor substrate on which a storage electrode contact hole is formed, and depositing a first conductive layer, a natural oxide film, and a second conductive layer, and patterning the second conductive layer to form a second conductive layer pattern. Forming a; Forming an insulator spacer on sidewalls of the second conductive layer pattern; And etching the first and second conductive layers to form a cylindrical storage electrode by using the spacer as a mask. 제1항에 있어서, 상기 제2도전층 패턴 형성시 상기 자연산화막을 식각종말 검출점(End Point Detector)로 이용하는 것을 특징으로 하는 원통형 커패시터 제조방법.2. The method of claim 1, wherein the natural oxide layer is used as an end point detector when forming the second conductive layer pattern. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950057176A 1995-12-26 1995-12-26 Cylindrical Capacitor Manufacturing Method KR970053833A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950057176A KR970053833A (en) 1995-12-26 1995-12-26 Cylindrical Capacitor Manufacturing Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950057176A KR970053833A (en) 1995-12-26 1995-12-26 Cylindrical Capacitor Manufacturing Method

Publications (1)

Publication Number Publication Date
KR970053833A true KR970053833A (en) 1997-07-31

Family

ID=66619064

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950057176A KR970053833A (en) 1995-12-26 1995-12-26 Cylindrical Capacitor Manufacturing Method

Country Status (1)

Country Link
KR (1) KR970053833A (en)

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