KR970052727A - Multi-layer thin film etching method of polysilicon film, oxide film, and polysilicon film by in-situ process - Google Patents
Multi-layer thin film etching method of polysilicon film, oxide film, and polysilicon film by in-situ process Download PDFInfo
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- KR970052727A KR970052727A KR1019950050880A KR19950050880A KR970052727A KR 970052727 A KR970052727 A KR 970052727A KR 1019950050880 A KR1019950050880 A KR 1019950050880A KR 19950050880 A KR19950050880 A KR 19950050880A KR 970052727 A KR970052727 A KR 970052727A
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- oxide film
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Abstract
본 발명은 폴리실리콘막과 산화막이 차레로 적층되어 있는 다층박막을 식각하는 방법에 있어서, 폴리실리콘막과 산화막의 선택식각비가 동일한 가스를 이용하여 폴리실리콘막과 산화막을 플라즈마 건식식각하는 단계; 동일한 식각 챔버에서 폴리실리콘막과 산화막의 선택식각비가 높은 식각 가스를 이용하여 하부층의 폴리실리콘막을 식각하는 단계; 및 동일한 상기 식각 챔버에 폴리실리콘막 사이에서 식각되지 않고 남아 있는 산화막을 BOD(buffered oxide etchant)로 습식식각하는 단계를 포함하여 이루어지는 것을 특징으로 하는 다층박막을 식각하는 방법.The present invention relates to a method for etching a multilayer thin film in which a polysilicon film and an oxide film are sequentially stacked, comprising the steps of: plasma dry etching the polysilicon film and the oxide film using a gas having the same selectivity ratio between the polysilicon film and the oxide film; Etching the polysilicon layer of the lower layer by using an etching gas having a high selectivity ratio between the polysilicon layer and the oxide layer in the same etching chamber; And wet etching an oxide film remaining without etching between polysilicon films in the same etching chamber with a buffered oxide etchant (BOD).
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
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Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050880A KR970052727A (en) | 1995-12-16 | 1995-12-16 | Multi-layer thin film etching method of polysilicon film, oxide film, and polysilicon film by in-situ process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050880A KR970052727A (en) | 1995-12-16 | 1995-12-16 | Multi-layer thin film etching method of polysilicon film, oxide film, and polysilicon film by in-situ process |
Publications (1)
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KR970052727A true KR970052727A (en) | 1997-07-29 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019950050880A KR970052727A (en) | 1995-12-16 | 1995-12-16 | Multi-layer thin film etching method of polysilicon film, oxide film, and polysilicon film by in-situ process |
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KR (1) | KR970052727A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100418121B1 (en) * | 2001-12-22 | 2004-02-14 | 동부전자 주식회사 | Method For Fabricating Semiconductor Devices |
-
1995
- 1995-12-16 KR KR1019950050880A patent/KR970052727A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100418121B1 (en) * | 2001-12-22 | 2004-02-14 | 동부전자 주식회사 | Method For Fabricating Semiconductor Devices |
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