KR970052727A - Multi-layer thin film etching method of polysilicon film, oxide film, and polysilicon film by in-situ process - Google Patents

Multi-layer thin film etching method of polysilicon film, oxide film, and polysilicon film by in-situ process Download PDF

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Publication number
KR970052727A
KR970052727A KR1019950050880A KR19950050880A KR970052727A KR 970052727 A KR970052727 A KR 970052727A KR 1019950050880 A KR1019950050880 A KR 1019950050880A KR 19950050880 A KR19950050880 A KR 19950050880A KR 970052727 A KR970052727 A KR 970052727A
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South Korea
Prior art keywords
film
etching
polysilicon
gas
oxide film
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KR1019950050880A
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Korean (ko)
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신기수
윤종원
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김주용
현대전자산업 주식회사
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Priority to KR1019950050880A priority Critical patent/KR970052727A/en
Publication of KR970052727A publication Critical patent/KR970052727A/en

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Abstract

본 발명은 폴리실리콘막과 산화막이 차레로 적층되어 있는 다층박막을 식각하는 방법에 있어서, 폴리실리콘막과 산화막의 선택식각비가 동일한 가스를 이용하여 폴리실리콘막과 산화막을 플라즈마 건식식각하는 단계; 동일한 식각 챔버에서 폴리실리콘막과 산화막의 선택식각비가 높은 식각 가스를 이용하여 하부층의 폴리실리콘막을 식각하는 단계; 및 동일한 상기 식각 챔버에 폴리실리콘막 사이에서 식각되지 않고 남아 있는 산화막을 BOD(buffered oxide etchant)로 습식식각하는 단계를 포함하여 이루어지는 것을 특징으로 하는 다층박막을 식각하는 방법.The present invention relates to a method for etching a multilayer thin film in which a polysilicon film and an oxide film are sequentially stacked, comprising the steps of: plasma dry etching the polysilicon film and the oxide film using a gas having the same selectivity ratio between the polysilicon film and the oxide film; Etching the polysilicon layer of the lower layer by using an etching gas having a high selectivity ratio between the polysilicon layer and the oxide layer in the same etching chamber; And wet etching an oxide film remaining without etching between polysilicon films in the same etching chamber with a buffered oxide etchant (BOD).

Description

인 슈트(In-Situ)공정에 의한 폴리실리콘막/산화막/폴리실리콘막의 다층박막 식각방법Multi-layer thin film etching method of polysilicon film / oxide film / polysilicon film by in-situ process

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는1 is

Claims (6)

폴리실리콘막과 산화막이 차레로 적층되어 있는 다층박막을 식각하는 방법에 있어서, 폴리실리콘막과 산화막의 선택식각비가 동일한 가스를 이용하여 폴리실리콘막과 산화막을 플라즈마 건식식각하는 단계; 동일한 식각 챔버에서 폴리실리콘막과 산화막의 선택식각비가 높은 식각 가스를 이용하여 하부층의 폴리실리콘막을 식각하는 단계; 및 동일한 상기 식각 챔버에 폴리실리콘막 사이에서 식각되지 않고 남아 있는 산화막을 BOE(buffered oxide etchant)로 습식식각하는 단계를 포함하여 이루어지는 것을 특징으로 하는 다층박막을 식각하는 방법.What is claimed is: 1. A method of etching a multilayer thin film in which a polysilicon film and an oxide film are sequentially stacked, comprising the steps of: plasma dry etching the polysilicon film and the oxide film using a gas having the same selectivity ratio between the polysilicon film and the oxide film; Etching the polysilicon layer of the lower layer by using an etching gas having a high selectivity ratio between the polysilicon layer and the oxide layer in the same etching chamber; And wet etching an oxide film remaining without etching between polysilicon films in the same etching chamber with a buffered oxide etchant (BOE). 제1항에 있어서, 상기 폴리실리콘막과 산화막의 선택식각비가 동일한 가스는 C2F6가스인 것을 특징으로 하는 다층박막을 식각하는 방법.The method of claim 1, wherein the gas having the same selectivity ratio between the polysilicon film and the oxide film is a C 2 F 6 gas. 제1항에 있어서, 상기 폴리실리콘막과 산화막의 선택식각비가 높은 식각 가스는 Cl2가스인 것을 특징으로 하는 다층박막을 식각하는 방법.The method of claim 1, wherein the etching gas having a high selectivity ratio between the polysilicon film and the oxide film is Cl 2 gas. 제1항에 있어서, 상기 폴리실리콘막과 산화막의 선택식각비가 높은 식각 가스는 Cl2+O2가스인 것을 특징으로 하는 다층박막을 식각하는 방법.The method of claim 1, wherein the etching gas having a high selectivity ratio between the polysilicon film and the oxide film is Cl 2 + O 2 gas. 제1항에 있어서, 상기 폴리실리콘막과 산화막의 선택식각비가 높은 식각 가스는 Cl2+N2혼합 가스인 것을 특징으로 하는 다층박막을 식각하는 방법.The method of claim 1, wherein the etching gas having a high selectivity ratio between the polysilicon film and the oxide film is a Cl 2 + N 2 mixed gas. 제1항에 있어서, 상기 폴리실리콘막과 산화막의 선택식각비가 높은 식각 가스는 Cl2+HBr혼합 가스인 것을 특징으로 하는 다층박막을 식각하는 방법.The method of claim 1, wherein the etching gas having a high selectivity ratio between the polysilicon film and the oxide film is a Cl 2 + HBr mixed gas. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950050880A 1995-12-16 1995-12-16 Multi-layer thin film etching method of polysilicon film, oxide film, and polysilicon film by in-situ process KR970052727A (en)

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KR1019950050880A KR970052727A (en) 1995-12-16 1995-12-16 Multi-layer thin film etching method of polysilicon film, oxide film, and polysilicon film by in-situ process

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KR1019950050880A KR970052727A (en) 1995-12-16 1995-12-16 Multi-layer thin film etching method of polysilicon film, oxide film, and polysilicon film by in-situ process

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100418121B1 (en) * 2001-12-22 2004-02-14 동부전자 주식회사 Method For Fabricating Semiconductor Devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100418121B1 (en) * 2001-12-22 2004-02-14 동부전자 주식회사 Method For Fabricating Semiconductor Devices

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