KR970052694A - Wafer cleaning method - Google Patents

Wafer cleaning method Download PDF

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Publication number
KR970052694A
KR970052694A KR1019950065692A KR19950065692A KR970052694A KR 970052694 A KR970052694 A KR 970052694A KR 1019950065692 A KR1019950065692 A KR 1019950065692A KR 19950065692 A KR19950065692 A KR 19950065692A KR 970052694 A KR970052694 A KR 970052694A
Authority
KR
South Korea
Prior art keywords
ultrapure water
wafer
cleaning
isopropyl alcohol
cleaning method
Prior art date
Application number
KR1019950065692A
Other languages
Korean (ko)
Inventor
김우진
이종수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950065692A priority Critical patent/KR970052694A/en
Publication of KR970052694A publication Critical patent/KR970052694A/en

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Abstract

본 발명은 초순수 세정시 이소프로필 알콜을 초순수 세정조에 보충을 하여 웨이퍼상에 흡착된 케미칼과 초순수 세정전에 표면장력을 완화시켜 초순수의 세정효과를 향상시킬 수 있다.The present invention can replenish isopropyl alcohol in an ultrapure water cleaning tank during ultrapure water cleaning to relax the surface tension before cleaning the chemicals adsorbed on the wafer and ultrapure water, thereby improving the cleaning effect of ultrapure water.

Description

웨이퍼 세정방법Wafer cleaning method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (2)

웨이퍼 세정방법에 있어서, 케미칼 세정조에서 웨이퍼를 케미칼 처리하는 단계; 상기 웨이퍼에 흡착된 상기 케미칼을 세정하기 위하여, 초순수 세정조에 이스프로필 알콜을 첨가하여 1차 세정하고, 상기 이소프로필 알콜의 공급을 중단시킨 상태에서 초순수만으로 2차 세정하는 단계; 및 상기 웨이퍼상의 초순수를 건조시키기 위하여, 이소프로필 알콜 또는 스핀 건조조에서 웨이퍼를 건조시키는 단계로 이루어지는 것을 특징으로 하는 웨이퍼 세정방법.A wafer cleaning method, comprising: chemically processing a wafer in a chemical cleaning bath; Washing the chemical adsorbed on the wafer by first adding isopropyl alcohol to an ultrapure water cleaning tank and performing secondary cleaning with only ultrapure water while stopping supply of the isopropyl alcohol; And drying the wafer in isopropyl alcohol or a spin drying bath to dry the ultrapure water on the wafer. 제1항에 있어서, 상기 초순수 세정조에서 초순수에 대한 이스프로필 알콜의 혼합비율은 50내지 90%의 범위인 것을 특징으로 하는 웨이퍼 세정방법.The method of claim 1, wherein the mixing ratio of isopropyl alcohol to ultrapure water in the ultrapure water cleaning tank is in the range of 50 to 90%. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950065692A 1995-12-29 1995-12-29 Wafer cleaning method KR970052694A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950065692A KR970052694A (en) 1995-12-29 1995-12-29 Wafer cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950065692A KR970052694A (en) 1995-12-29 1995-12-29 Wafer cleaning method

Publications (1)

Publication Number Publication Date
KR970052694A true KR970052694A (en) 1997-07-29

Family

ID=66624234

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950065692A KR970052694A (en) 1995-12-29 1995-12-29 Wafer cleaning method

Country Status (1)

Country Link
KR (1) KR970052694A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329268B1 (en) 1997-11-28 2001-12-11 Nec Corporation Semiconductor cleaning method
KR100546190B1 (en) * 1998-09-23 2006-04-12 주식회사 하이닉스반도체 Semiconductor device manufacturing method
KR100595140B1 (en) * 2004-12-31 2006-06-30 동부일렉트로닉스 주식회사 Wafer cleaning method for effective removal of chemical residue

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329268B1 (en) 1997-11-28 2001-12-11 Nec Corporation Semiconductor cleaning method
KR100348917B1 (en) * 1997-11-28 2003-01-06 닛본 덴기 가부시끼가이샤 Method for manufacturing semiconductor device
KR100546190B1 (en) * 1998-09-23 2006-04-12 주식회사 하이닉스반도체 Semiconductor device manufacturing method
KR100595140B1 (en) * 2004-12-31 2006-06-30 동부일렉트로닉스 주식회사 Wafer cleaning method for effective removal of chemical residue

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