KR970051107A - Internal power supply - Google Patents

Internal power supply Download PDF

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Publication number
KR970051107A
KR970051107A KR1019950067542A KR19950067542A KR970051107A KR 970051107 A KR970051107 A KR 970051107A KR 1019950067542 A KR1019950067542 A KR 1019950067542A KR 19950067542 A KR19950067542 A KR 19950067542A KR 970051107 A KR970051107 A KR 970051107A
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South Korea
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power supply
internal power
reference voltage
supply voltage
voltage generator
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KR1019950067542A
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Korean (ko)
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KR0173934B1 (en
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서동일
윤세승
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김광호
삼성전자 주식회사
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
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Abstract

본 발명은 반도체 메모리장치에 관한 것으로서, 특히 액티브 사이클중 특히 전류 소모가 많은 구간에서 내부전원전압의 강하를 보상하여 줌으로써 안정한 내부전원전압을 발생하여 소자 특성을 방지할 수 있는 내부전원공급장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor memory device, and more particularly, to an internal power supply device capable of preventing a device characteristic by generating a stable internal power supply voltage by compensating for a drop in the internal power supply voltage during a period of high current consumption during an active cycle. will be.

본 발명의 내부전원공급장치는 외부로부터 인가되는 전원전압을 입력하여 VREF를 발생하는 기준전압발생기와, 기준전압 발생기로부터 인가되는 VREF을 증폭하여 상대적으로 낮은 레벨의 VREFPL를 발생하는 제1주변회로 기준전압발생기와, 기준전압 발생기로부터 인가되는 VREF을 증폭하여 VREFPL 보다는 상대적으로 높은 레벨의 VREFPH를 발생하는 제2주변회로 기준전압발생기와, VREFPL를 입력하여 스탠바이 내부전원 전압을 발생하는 스탠바이 내부전원전압 발생기와, RASB 신호를 입력하여 액티브 내부전원전압 발생기 인에이블 신호 PAIVCEB를 출력하는 액티브 내부전원전압 발생기 콘트롤부와, 마스터 신호에 따라서, VREFPL와 VREFPH 중 하나를 선택하기 위한 콘트롤신호를 출력하는 콘트롤신호 발생기와, 상기 제1 및 제2주변회로 기준전압발생기로부터 출력되는 VREFPL 및 VREFPH와 콘트롤신호 발생기로부터 출력되는 콘트롤신호와 상기 액티브내부전원전압발생기 콘트롤부로부터 인가되는 PAIVCEB를 입력하여, 상기 콘트롤신호에 의해 VREFPL이 선택될 때는 VREFPL에 따른 내부전원전압을 발생하고, 상기 콘트롤 신호에 의해 VREFPH이 선택될 때는 VREFPH에 따른 내부전원전압을 발생하는 액티브 내부전원전압 발생기를 포함한다.The internal power supply apparatus of the present invention inputs a power voltage applied from the outside to generate a VREF, and a first peripheral circuit reference that generates a relatively low level of VREFPL by amplifying the VREF applied from the reference voltage generator. A voltage generator, a second peripheral circuit reference voltage generator that amplifies VREF applied from the reference voltage generator to generate VREFPH of a level higher than VREFPL, and a standby internal power voltage generator that inputs VREFPL to generate a standby internal power supply voltage. And an active internal power supply voltage generator controller for inputting the RASB signal to output the active internal power supply voltage generator enable signal PAIVCEB, and a control signal generator for outputting a control signal for selecting one of VREFPL and VREFPH according to the master signal. And output from the first and second peripheral circuit reference voltage generators. Inputs a control signal output from VREFPL and VREFPH and a control signal generator and PAIVCEB applied from the active internal power supply voltage generator control unit, and generates an internal power supply voltage according to VREFPL when VREFPL is selected by the control signal, and When VREFPH is selected by the control signal, it includes an active internal power supply voltage generator which generates an internal power supply voltage according to VREFPH.

Description

내부전원전압 공급장치Internal power supply

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제6도는 본 발명의 실시예에 따른 반도체 메모리장치의 내부전원전압 공급장치의 블럭도.6 is a block diagram of an internal power supply voltage supply device of a semiconductor memory device according to an embodiment of the present invention.

제7도는 제6도의 내부전원전압 공급장치의 스탠바이 내부전원전압발생기의 상세 회로도.7 is a detailed circuit diagram of the standby internal power supply voltage generator of the internal power supply device of FIG. 6;

제8도는 제6도의 내부전원전압 공급장치의 콘트롤신호발생기의 상세 회로도.8 is a detailed circuit diagram of a control signal generator of the internal power supply voltage device of FIG.

Claims (6)

외부로부터 인가되는 전원전압을 입력하여 기준전압(VREF)을 발생하는 기준전압발생기와, 기준전압 발생기(210)로부터 인가되는 기준전압(VREF)을 증폭하여 상대적으로 낮은 내부전압전원(IVC) 레벨로 조정된 기준전압(VREFPL)을 발생하는 제1주변회로 기준전압발생기(220)와, 기준전압 발생기(210)로부터 인가되는 기준전압(VREF)을 증폭하여 상기 제1주변회로 기준전압발생기(220)로부터 출력되는 기준전압(VREFPL)의 레벨보다는 상대적으로 높게 조정된 기준전압(VREFPH)을 발생하는 제2주변회로 기준전압발생기(230)와, 상기 제1주변회로 기준전압발생기(220)로부터 출력되는 상대적으로 낮은 레벨의 VREFPL를 입력하여 스탠바이 내부전원전압을 발생하는 스탠바이 내부전원전압 발생기(240)와, 마스터신호를 입력하여 액티브 내부전원전압발생기 인에이블신호 (PAIVCEB)를 출력하는 액티브 내부전원전압발생기 콘트롤부(250)와, 마스터 신호에 따라서, 상기 제1 및 제2주변회로 기준전압발생기(220), (230)로부터 출력되는 기준전압(VREFPL)과 (VREFPH) 중 하나를 선택하기 위한 콘트롤신호(PAIVCON)를 출력하는 콘트롤신호 발생기(260)와, 상기 제1 및 제2주변회로 기준전압발생기(220), (230)로부터 출력되는 기준전압(VREFPL) 및 (VREFPH)와 콘트롤신호발생기(260)로부터 출력되는 콘트롤신호(PAIVCON)와 상기 액티브 내부전원전압발생기 콘트롤부(250)로부터 인가되는 액티브 내부전원전압발생기 인에이블신호(PAIVCEB)를 입력하여, 상기 콘트롤신호(PAIVCON)에 의해 기준전압(VREFPL)이 선택될 때는 기준전압(VREFPL)에 따른 내부전원전압(IVC)을 발생하고, 상기 콘트롤신호(PAIVCON)에 의해 기준전압(VREFPH)이 선택될 때는 기준전압(VREFPH)에 따른 내부전원전압(IVC)을 발생하는 액티브 내부전원전압(IVC) 발생기(270)를 포함하는 것을 특징으로 하는 내부전원전압 공급장치.A reference voltage generator generates a reference voltage VREF by inputting a power supply voltage applied from the outside, and amplifies the reference voltage VREF applied from the reference voltage generator 210 to a relatively low internal voltage power supply level. The first peripheral circuit reference voltage generator 220 generating the adjusted reference voltage VREFPL, and the first peripheral circuit reference voltage generator 220 by amplifying the reference voltage VREF applied from the reference voltage generator 210. A second peripheral circuit reference voltage generator 230 generating a reference voltage VREFPH that is adjusted relatively higher than a level of the reference voltage VREFPL output from the first peripheral circuit reference voltage generator 220. Standby internal power supply voltage generator 240 which inputs a relatively low level VREFPL to generate a standby internal power supply voltage, and active internal power supply voltage generator enable signal (PAIVCEB) by inputting a master signal. Among the reference voltages VREFPL and VREFPH output from the first and second peripheral circuit reference voltage generators 220 and 230 according to the active internal power supply voltage generator control unit 250 to output and the master signal. A control signal generator 260 that outputs a control signal PAIVCON for selecting one, and reference voltages VREFPL and VREFPH output from the first and second peripheral circuit reference voltage generators 220 and 230. ) And the control signal PAIVCON output from the control signal generator 260 and the active internal power supply voltage generator enable signal PAIVCEB applied from the active internal power supply voltage generator control unit 250 to input the control signal (PAIVCONB). When the reference voltage VREFPL is selected by PAIVCON, an internal power supply voltage IVC is generated according to the reference voltage VREFPL. When the reference voltage VREFPH is selected by the control signal PAIVCON, the reference voltage VREFPL is generated. Internal power supply voltage according to VREFPH An internal power supply voltage (IVC) generator (270) for generating an IVC. 제1항에 있어서, 콘트롤신호발생기(260)는 RASB에 의해 발생되는 펄스신호(PR)을 입력하여 딜레이시켜 주기 위한 딜레이수단(81)과, 상기 딜레이수단(81)과, 펄스신호(PR)를 입력하여 논리낸드하는 낸드 게이트(NA81)과, 상기 낸드 게이트(NA81)의 출력을 반전시켜 콘트롤신호(PAIVCON)를 출력하기 위한 인버터(IN84)로 구성되는 것을 특징으로 하는 내부전원전압 공급장치.2. The control signal generator 260 is a delay means 81 for inputting and delaying a pulse signal PR generated by a RASB, the delay means 81, and a pulse signal PR. And an inverter (IN84) for outputting a control signal (PAIVCON) by inverting the output of the NAND gate (NA81) and a logic NAND gate (NA81). 제2항에 있어서, 상기 콘트롤신호발생기(260)의 딜레이수단(81)은 펄스신호(PR)를 입력으로 하는 직렬연결된 홀수개의 인버터(IN81-IN83)로 구성되는 것을 특징으로 하는 내부전원전압 공급장치.3. The internal power supply voltage supply according to claim 2, wherein the delay means 81 of the control signal generator 260 is composed of an odd number of inverters IN81-IN83 connected in series to input a pulse signal PR. Device. 제1항에 있어서, 액티브 내부전원전압 발생기(270)는 일 입력단에 인가되는 제1 및 제2주변회로 기준전압발생기(220), (230)로부터 출력되는 기준전압(VREFPL) 또는 (VREFPH) 중 하나와 타 입력단에 인가되는 액티브 내부전원전압(IVC)을 차동증폭하기 위한 차동증폭부(91)와, 차동증폭부(91)의 출력에 따라 구동되어 내부전원전압(IVC)을 발생하는 P형 모스 트랜지스터(MP96)와, 상기 액티브 내부전원전압발생기 콘트롤부(250)로부터 인가되는 액티브 내부전원전압발생기 인에이블신호(PAIVCEB)에 따라 상기 차동증폭부(91)를 온, 오프시켜 주기 위한 인에이블부(92)와, 제1주변회로 기준전압발생기(220)에서 출력되는 기준전압(VREFPL)과 제2주변회로 기준전압발생기(230)에서 출력되는 기준전압(VREFPH) 중 하나를 선택하여 차동증폭부(91)에 인가하기 위한 선택수단(94)을 포함하는 것을 특징으로 하는 내부전원전압 공급장치.The voltage generator of claim 1, wherein the active internal power supply voltage generator 270 is one of the reference voltages VREFPL or VREFPH output from the first and second peripheral circuit reference voltage generators 220 and 230 applied to one input terminal. A differential amplifier 91 for differentially amplifying the active internal power supply voltage IVC applied to one and the other input terminal, and a P type driven according to the output of the differential amplifier 91 to generate the internal power supply voltage IVC. Enable to turn on and off the differential amplifier 91 according to the MOS transistor MP96 and the active internal power supply voltage generator enable signal PAIVCEB applied from the active internal power supply voltage generator control unit 250. A differential amplification is performed by selecting one of the reference part 92 and the reference voltage VREFPL output from the first peripheral circuit reference voltage generator 220 and the reference voltage VREFPH output from the second peripheral circuit reference voltage generator 230. And selecting means 94 for applying to the portion 91. Internal power supply voltage characterized in that. 제1항에 있어서, 액티브 내부전원전압 발생기(270)의 선택수단(94)은 콘트롤신호 발생기(260)로부터 출력되는 콘트롤신호(PAIVCON)를 반전시켜 주기위한 인버터(IN92)와, 상기 콘트롤신호(PAIVCON)과 인버터(IN92)를 통해 반전된 콘트롤신호(PAIVCONB)에 따라 구동되어 제1주변회로 기준전압발생기(220)로부터 출력된 기준전압(VREEFPL)를 차동증폭부(91)의 일입력단에 제공하기 위한 트랜스미션 게이트(TG91)와, 상기 콘트롤신호(PAIVCON)와 인버터(IN92)를 통해 반전된 콘트롤신호(PAIVCONB)에 따라 구동되어 제2주변회로 기준전압발생기(220)로부터 출력된 기준전압(VREEFPH)을 차동증폭부(91)의 일입력단에 제공하기 위한 트랜스미션 게이트(TG92)로 구성되는 것을 특징으로 하는 내부 전원전압 공급장치.The method of claim 1, wherein the selection means 94 of the active internal power supply voltage generator 270 is an inverter IN92 for inverting the control signal PAIVCON output from the control signal generator 260, and the control signal ( The reference voltage VREEFPL, which is driven according to the control signal PAIVCONB inverted through the PAIVCON and the inverter IN92 and is output from the first peripheral circuit reference voltage generator 220, is provided to one input terminal of the differential amplifier 91. A reference voltage VREEFPH driven by the transmission gate TG91 and the control signal PAIVCONB inverted through the control signal PAIVCON and the inverter IN92 and output from the second peripheral circuit reference voltage generator 220. ) Is provided with a transmission gate (TG92) for providing one input terminal of the differential amplifier 91. 제1항에 있어서, 마스터 신호는 외부 클럭신호인 RASB 신호에 의해 콘트롤되는 펄스 신호(PR)인 것을 특징으로 하는 내부전원전압 공급장치.The internal power supply voltage supply device according to claim 1, wherein the master signal is a pulse signal (PR) controlled by a RASB signal which is an external clock signal. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950067542A 1995-12-29 1995-12-29 Internal power supply KR0173934B1 (en)

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* Cited by examiner, † Cited by third party
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KR100483058B1 (en) * 1997-09-03 2006-05-16 주식회사 하이닉스반도체 Lath buffer device for semiconductor memory device
KR100506046B1 (en) * 1998-06-30 2005-10-12 주식회사 하이닉스반도체 Internal voltage generator
KR100494122B1 (en) * 1998-07-16 2005-08-01 주식회사 하이닉스반도체 Internal voltage control circuit
KR100623335B1 (en) * 1999-12-30 2006-09-11 매그나칩 반도체 유한회사 Voltage down converter
KR20020006060A (en) * 2000-07-11 2002-01-19 박종섭 Reference voltage generator
US7319361B2 (en) 2005-06-29 2008-01-15 Hynix Semiconductor Inc. Internal voltage generation circuit of a semiconductor device

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