KR970049004A - Method of forming fine pattern of semiconductor device - Google Patents

Method of forming fine pattern of semiconductor device Download PDF

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Publication number
KR970049004A
KR970049004A KR1019950059242A KR19950059242A KR970049004A KR 970049004 A KR970049004 A KR 970049004A KR 1019950059242 A KR1019950059242 A KR 1019950059242A KR 19950059242 A KR19950059242 A KR 19950059242A KR 970049004 A KR970049004 A KR 970049004A
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KR
South Korea
Prior art keywords
photoresist
semiconductor device
pattern
photoresist pattern
forming
Prior art date
Application number
KR1019950059242A
Other languages
Korean (ko)
Inventor
남정림
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950059242A priority Critical patent/KR970049004A/en
Publication of KR970049004A publication Critical patent/KR970049004A/en

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  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

본 발명은 포토레지스트 패턴을 다단 포토레지스트 플로우하여 에지부분이 수직적으로 형성된 포토레지스트 패턴을 형성할 수 있는 반도체 장치의 미세 패턴 형성 방법에 관한 것으로, 반도체 기판상에 하부막과 포토레지스트를 순차적으로 형성하고, 반도체 장치의 미세 콘택 패턴이 형성될 영역을 정의하여 상기 포토레지스트를 패터닝하는 공정과; 상기 포토레지스트 패턴에 열을 가해 1차 포토레지스트 플로우하는 공정과; 상기 반도체 기판, 하부막, 그리고 포토레지스트 패턴을 포함하는 반도체 장치를 거꾸로 뒤집어서 열판상에 로딩시킨 후, 상기 포토레지스트 패턴을 2차 포토레지스트 플로우하는 공정을 포함하고 있다. 이 방법에 의해서, 반도체 장치의 미세 패턴을 형성하는 공정에서 사용되는 미세한 포토레지스트 패턴을 수직적인 구조로 형성할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a fine pattern of a semiconductor device capable of forming a photoresist pattern in which edge portions are vertically formed by multistage photoresist flow of a photoresist pattern. And patterning the photoresist by defining a region where a micro contact pattern of the semiconductor device is to be formed; Performing primary photoresist flow by applying heat to the photoresist pattern; And inverting and loading the semiconductor device including the semiconductor substrate, the lower layer, and the photoresist pattern on the hot plate upside down, and then performing a second photoresist flow on the photoresist pattern. By this method, the fine photoresist pattern used in the process of forming the fine pattern of a semiconductor device can be formed in a vertical structure.

Description

반도체 장치의 미세 패턴 형성 방법Method of forming fine pattern of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2A도 내지 제2D도는 본 발명의 실시예에 따른 반도체 장치의 포토레지스트의 미세 패턴을 형성하는 방법을 보이는 순차 공정도.2A to 2D are sequential process diagrams showing a method of forming a fine pattern of a photoresist of a semiconductor device according to an embodiment of the present invention.

Claims (1)

반도체 기판(10)상에 하부막(12)을 사이에 두고 포토레지스트 패턴(14)를 형성하는 공정과; 상기 포토레지스트 패턴(14)을 플로우시키는 공정과; 플로우된 포토레지스트 패턴(14a)이 형성된 상기 반도체 기판(10)의 배면(10a)이 위에 놓이도록 거꾸로 뒤집어서 플로우 시스템내의 열판(20)상에 로딩시킨 후, 상기 포토레지스트 패턴(14a)을 2차 플로우시키는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 미세 패턴 형성 방법.Forming a photoresist pattern 14 on the semiconductor substrate 10 with the lower film 12 therebetween; Flowing the photoresist pattern (14); After the backside 10a of the semiconductor substrate 10 on which the flowed photoresist pattern 14a is formed is turned upside down and loaded on the hot plate 20 in the flow system, the photoresist pattern 14a is secondary. A fine pattern forming method for a semiconductor device, comprising the step of flowing. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950059242A 1995-12-27 1995-12-27 Method of forming fine pattern of semiconductor device KR970049004A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950059242A KR970049004A (en) 1995-12-27 1995-12-27 Method of forming fine pattern of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950059242A KR970049004A (en) 1995-12-27 1995-12-27 Method of forming fine pattern of semiconductor device

Publications (1)

Publication Number Publication Date
KR970049004A true KR970049004A (en) 1997-07-29

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ID=66619894

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950059242A KR970049004A (en) 1995-12-27 1995-12-27 Method of forming fine pattern of semiconductor device

Country Status (1)

Country Link
KR (1) KR970049004A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101107346B1 (en) * 2005-10-14 2012-01-19 엘지이노텍 주식회사 Method Of Fabricating Photoresist

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101107346B1 (en) * 2005-10-14 2012-01-19 엘지이노텍 주식회사 Method Of Fabricating Photoresist

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