KR970030790A - Structure of Bipolar Inverter and Manufacturing Method Thereof - Google Patents

Structure of Bipolar Inverter and Manufacturing Method Thereof Download PDF

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KR970030790A
KR970030790A KR1019950040869A KR19950040869A KR970030790A KR 970030790 A KR970030790 A KR 970030790A KR 1019950040869 A KR1019950040869 A KR 1019950040869A KR 19950040869 A KR19950040869 A KR 19950040869A KR 970030790 A KR970030790 A KR 970030790A
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South Korea
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trench
metal material
forming
conductive metal
diffusion layer
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KR1019950040869A
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KR0174622B1 (en
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유준형
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김광호
삼성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

반도체상에서 바이폴라 인버터를 제조함에 있어서, 2개의 PNP트랜지스터와 NPN트랜지스터를 하나의 소자로 형성하므로써, 2개의 트랜지스터가 차지하던 면적을 줄이게 되며, 이에 따라 배선의 길이도 줄어들게 된다. 이에 따라 기생 정전 용량과 기생 저항을 줄어 들게 되고, 하나의 소자화된 인버터는 종전의 인버터에 비하여 처리 속도면에서 향상된 성능을 제공하고, 미세 패턴 형성시 바이폴라 인버터의 미세화로 인한 미세 패턴을 형성하기가 용이하게 된다.In fabricating a bipolar inverter on a semiconductor, by forming two PNP transistors and an NPN transistor as one element, the area occupied by two transistors is reduced, thereby reducing the length of the wiring. As a result, parasitic capacitance and parasitic resistance are reduced, and one elementized inverter provides improved performance in terms of processing speed as compared to a conventional inverter, and it is difficult to form a fine pattern due to the miniaturization of a bipolar inverter when forming a fine pattern. It becomes easy.

Description

바이폴라 인버터의 구조 및 그 제조방법Structure of Bipolar Inverter and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제 2도는 본 발명의 실시예에 따른 바이폴라 인버터의 단면도.2 is a cross-sectional view of a bipolar inverter according to an embodiment of the present invention.

제 3a도 내지 제 3h도는 본 발명의 방법에 의하여 바이폴라 인버터를 제조하는 공정도.3A-3H are process drawings for manufacturing a bipolar inverter by the method of the present invention.

Claims (3)

NPN 트랜지스터와 PNP 트랜지스터로 구성된 바이폴라 인버터를 제조함에 있어서, P형 기판(21)상에 N형 매몰층(23)을 형성하고, 그 위에 P형 에피탤셜층(24)을 성장하는 공정과, N형 매몰층(23)에 닿도록 N형 확산층(26)을 형성하는 공정과, N형 확산층(26)의 내부에 P형 확산층(28)을 형성하는 공정과, P형 확산층(28)의 내부에 고농도의 N형 확산층(30)을 형성하는 공정과, 상기와 같이 불순물이 형성된 기판(21)내에 트렌치(31-1)(31-2)(31-3)를 형성하는 공정과, 트렌치(31-1)(31-2)(31-3)를 형성함으로써 식각되지 않고 남아 있는 불순물 영역을 NPN 트랜지스터와 PNP 트랜지스터 영역으로 구분하는 스텝과, 트렌치(31-1)(31-2)(31-3)내에 절연물(32)을 채우는 공정과, 트렌치(31-2)내에 PNP 트랜지스터와 NPN 트랜지스터의 베이스 영역(28-1)(26-2)을 도전성 금속을 이용하여 연결하기 위한 공정을 포함하는 것을 특징으로 하는 바이폴라 인버터의 제조방법.In manufacturing a bipolar inverter composed of an NPN transistor and a PNP transistor, the step of forming an N-type buried layer 23 on the P-type substrate 21, growing the P-type epitaxial layer 24 thereon, and N Forming the N-type diffusion layer 26 so as to contact the type buried layer 23, forming the P-type diffusion layer 28 inside the N-type diffusion layer 26, and inside the P-type diffusion layer 28 Forming a high concentration N-type diffusion layer 30 in the trench, forming trenches 31-1, 31-2 and 31-3 in the substrate 21 in which impurities are formed as described above, and forming a trench ( 31-1) (31-2) and (31-3) to divide the impurity regions remaining unetched into NPN transistors and PNP transistor regions, and trenches 31-1, 31-2 and 31. A process for filling the insulator 32 in the -3) and for connecting the PNP transistors and the base regions 28-1 and 26-2 of the NPN transistors in the trench 31-2 with a conductive metal. Method of producing a bipolar inverter, comprising a step of including. 제 1항에 있어서, NPN 트랜지스터와 PNP 트랜지스터의 베이스 영역(28-1)(26-2)으 연결하는 공정은, 트렌치내(31-2)에 채워진 절연물(32)을 경사진 방향으로 식각을 실시하여 트렌치(31-2)내의 절연물(32)이 경사를 가지도록 식각하여 형성하는 공정과, 상기와 같이 형성된 PNP 트랜지스터와 NPN 트랜지스터의 베이스 영역(28-1)(26-2)을 제 1도전성 금속물(33)로 트렌치(31-2) 내부에서 연결하는 공정과, 트렌치(31-2)내의 입구를 넓히는 방향으로 경사지게 식각하여 차후에 제 형성될 게이트 단자의 폭을 넓혀주는 공정과, 상기와 같은 트렌치(31-2)내에 절연물(32)을 채우고, 상기 제 1금속물(33)까지 선택적으로 식각하는 공정과, 상기의 식각된 부위에 제 2도전성 금속물(35)을 형성하는 공정으로 이루어지는 것을 특징으로 하는 바이폴라 인버터의 제조방법.The process of claim 1, wherein the step of connecting the NPN transistor and the base regions 28-1 and 26-2 of the PNP transistor is performed by etching the insulator 32 filled in the trench 31-2 in an inclined direction. Etching to form the insulator 32 in the trench 31-2 so as to have an inclination, and the base regions 28-1 and 26-2 of the PNP transistor and the NPN transistor formed as described above are firstly formed. A process of connecting the inside of the trench 31-2 with the conductive metal material 33, an inclined etching in the direction of widening the inlet in the trench 31-2, and broadening the width of the gate terminal to be formed later; Filling the insulator 32 into the trench 31-2, and selectively etching the first metal material 33, and forming a second conductive metal material 35 on the etched portion. Method for producing a bipolar inverter, characterized in that consisting of. 실리콘 기판내에 형성된 트렌치(31-1)(31-2)(31-3)와, 이웃하는 트렌치 사이의 기판내에 순차적으로 형성된 N+ 매몰층(23), NPN 트랜지스터의 컬렉터용 N-확산층(26-1), 베이스용 P-확산층(28-1), 에이터용 N+확산층(30)과, 이웃하는 트렌치 사이의 기판내에 순차적으로 형성된 PNP 트랜지스터의 컬렉터용 P-형 에피택셜층(24), 베이스용 N-형 확산층(26-2), 에미터용 P-형 확산층(28-2)과, 상기의 두 트랜지스터의 사이의 트렌치내에 형성된 NPN 트랜지스터와 PNP 트랜지스터의 베이스간(28-1)(26-2)을 연결하기 위한 제 1도전성 금속물(33)과, 트렌치(31-2)내의 상기 제 1도전성 금속물(33) 상부와 실리콘 기판의 표면에 걸쳐 형성된 제 2도전성 금속물(35)과 상기 제 1 및 제 2도전성 금속물(33)(35)을 제외한 트렌치(31-2)내에 형성된 절연막(32)과, 상기 실리콘 기판의 배면의 전면에 제 3도전성 금속물(38)이 형성되어 있는 것과, 상기 기판의 전면에 패터닝된 절연 산화막(36)과 기판상에 형성된 전원단자(B), 입력단자(A), 접지단자(C), 출력단자(D)가 각각 형성되어 있는 것을 특징으로 하는 바이폴라 인버터의 구조.Trenchs 31-1, 31-2 and 31-3 formed in the silicon substrate, N + buried layers 23 sequentially formed in the substrate between neighboring trenches, and N-diffusion layers 26- for collectors of NPN transistors. 1), P-type epitaxial layer 24 for collectors, P-type epitaxial layer 24 for PNP transistors sequentially formed in a substrate between neighboring trenches, and P-diffusion layer 28-1 for base 28 Between the N-type diffusion layer 26-2, the emitter P-type diffusion layer 28-2, and the bases of the NPN transistors and PNP transistors formed in the trench between the above two transistors 28-1 and 26-2. The first conductive metal material 33 for connecting the second conductive metal material 33, the second conductive metal material 35 formed over the first conductive metal material 33 in the trench 31-2, and the surface of the silicon substrate; An insulating film 32 formed in the trench 31-2 except for the first and second conductive metal materials 33 and 35, and a third conductive film on the entire surface of the back surface of the silicon substrate. The metal material 38 is formed, the insulating oxide film 36 patterned on the front surface of the substrate, the power supply terminal B, the input terminal A, the ground terminal C, and the output terminal D formed on the substrate. ) Is a bipolar inverter structure, characterized in that each formed. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950040869A 1995-11-11 1995-11-11 Bipolar inverter and its fabrication KR0174622B1 (en)

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