KR970018553A - Capacitor Manufacturing Method of Semiconductor Memory Device - Google Patents
Capacitor Manufacturing Method of Semiconductor Memory Device Download PDFInfo
- Publication number
- KR970018553A KR970018553A KR1019950029327A KR19950029327A KR970018553A KR 970018553 A KR970018553 A KR 970018553A KR 1019950029327 A KR1019950029327 A KR 1019950029327A KR 19950029327 A KR19950029327 A KR 19950029327A KR 970018553 A KR970018553 A KR 970018553A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- wet etching
- insulating layer
- memory device
- depositing
- Prior art date
Links
Abstract
핀 구조의 스택형 캐패시터의 제조 방법에 대해 기재되어 있다. 이는 반도체기판 상에 식각방지층을 형성하는 공정, 습식식각 속도가 다른 두 절연층을 교대로 2층 이상 증착하는 공정, 상기 절연층들을 이방성식각하여 콘택홀을 형성하는 공정, 상기 콘택홀을 통해 노출된 상기 절연층을 습식식각함으로서, 핀구조를 형성하는 공정, 결과물 상에 도전물질을 증착한 후 패터닝함으로써 핀 형태의 스토리지전극을 형성하는 공정, 및 상기 스토리지전극 상에 유전체막 및 플레이트 전극을 형성하는 공정을 포함하는 것을 특징으로 한다. 따라서, 단순화할 수 있고 공정시간을 단축할 수 있다.A method of manufacturing a finned stacked capacitor is described. This method includes forming an etch stop layer on a semiconductor substrate, depositing two or more layers having different wet etching rates alternately, forming a contact hole by anisotropically etching the insulating layers, and exposing through the contact hole. Forming a fin structure by wet etching the insulating layer, forming a fin electrode by depositing and patterning a conductive material on the resultant, and forming a dielectric layer and a plate electrode on the storage electrode Characterized in that it comprises a step to. Therefore, it is possible to simplify and shorten the process time.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2C도 내지 제2D도는 본 발명의 제1실시예에 따른 핀구조의 캐패시터의 제조 방법을 설명하기 위한 단면도들이다.2C to 2D are cross-sectional views illustrating a method of manufacturing a capacitor having a fin structure according to a first embodiment of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950029327A KR970018553A (en) | 1995-09-07 | 1995-09-07 | Capacitor Manufacturing Method of Semiconductor Memory Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950029327A KR970018553A (en) | 1995-09-07 | 1995-09-07 | Capacitor Manufacturing Method of Semiconductor Memory Device |
Publications (1)
Publication Number | Publication Date |
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KR970018553A true KR970018553A (en) | 1997-04-30 |
Family
ID=66596482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950029327A KR970018553A (en) | 1995-09-07 | 1995-09-07 | Capacitor Manufacturing Method of Semiconductor Memory Device |
Country Status (1)
Country | Link |
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KR (1) | KR970018553A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010005301A (en) * | 1999-06-30 | 2001-01-15 | 김영환 | Forming method for capacitor of semiconductor device |
KR100388682B1 (en) * | 2001-03-03 | 2003-06-25 | 삼성전자주식회사 | Storage electric terminal layer and method for forming thereof |
KR100434496B1 (en) * | 2001-12-11 | 2004-06-05 | 삼성전자주식회사 | One cylinder stack capacitor and fabrication method thereof using double mold |
KR100590798B1 (en) * | 1999-07-26 | 2006-06-15 | 삼성전자주식회사 | Method for forming capacitor |
-
1995
- 1995-09-07 KR KR1019950029327A patent/KR970018553A/en not_active Application Discontinuation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010005301A (en) * | 1999-06-30 | 2001-01-15 | 김영환 | Forming method for capacitor of semiconductor device |
KR100590798B1 (en) * | 1999-07-26 | 2006-06-15 | 삼성전자주식회사 | Method for forming capacitor |
KR100388682B1 (en) * | 2001-03-03 | 2003-06-25 | 삼성전자주식회사 | Storage electric terminal layer and method for forming thereof |
KR100434496B1 (en) * | 2001-12-11 | 2004-06-05 | 삼성전자주식회사 | One cylinder stack capacitor and fabrication method thereof using double mold |
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