KR970018528A

KR970018528A - Method for manufacturing gate oxide film of semiconductor device

Info

Publication number: KR970018528A
Application number: KR1019950031361A
Authority: KR
Inventors: 황호익
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1995-09-22
Filing date: 1995-09-22
Publication date: 1997-04-30

Abstract

본 발명은 반도체 장치의 게이트산화막의 제조방법에 관한 것으로, 그 방법은 P-웰(7)과 N-웰(5)을 하나의 실리콘 기판(1)내에 형성하는 공정과; 상기 실리콘기판(1)상에 필드산화막(11)을 형성하는 공정과; 상기 필드산화막(11)사이의 상기 실리콘기판(1)상에 동일한 두께를 갖는 두개의 산화막(12)을 각각 형성하는 공정과, 상기 두 개의 산화막(12)중 그 두께를 줄이고자 하는 게이트산화막 이외의 게이트산화막상에 감광막(13)을 형성하는 공정과; 상기 두께를 줄이고자 하는 게이트산화막을 식각하여 그 두께를 조절하는 공정을 포함한다.The present invention relates to a method of manufacturing a gate oxide film of a semiconductor device, the method comprising: forming a P-well (7) and an N-well (5) in one silicon substrate (1); Forming a field oxide film (11) on the silicon substrate (1); Forming two oxide films 12 having the same thickness on the silicon substrate 1 between the field oxide films 11 and a gate oxide film of which the thickness of the two oxide films 12 is to be reduced. Forming a photosensitive film 13 on the gate oxide film; And etching the gate oxide film to reduce the thickness thereof to adjust the thickness thereof.

Description

Method for manufacturing gate oxide film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2C도는 본 발명의 실시예에 따른 반도체 장치의 게이트산화막의 제조방법의 제조공정들을 보여주는 단면도.2A to 2C are cross-sectional views showing manufacturing processes of a method for manufacturing a gate oxide film of a semiconductor device according to an embodiment of the present invention.

Claims

Forming a P-well 7 and an N-well 5 in one silicon substrate 1; Forming a field oxide film (11) on the silicon substrate (1); Forming two oxide films 12 having the same thickness on the silicon substrate 1 between the field oxide films 11, and other than the gate oxide films for reducing the thickness of the two oxide films 12, respectively. Forming a photosensitive film 13 on the gate oxide film; And etching the gate oxide film to reduce the thickness thereof to adjust the thickness of the gate oxide film.

The method of manufacturing a gate oxide film of a semiconductor device according to claim 1, wherein the photosensitive film (13) is formed using a source / drain forming mask.

The method of claim 1, wherein the gate oxide layer to reduce the thickness is removed by wet etching.

4. The method of manufacturing a gate oxide film of a semiconductor device according to claim 3, wherein the ion implantation step for adjusting the threshold voltage performed immediately after the deposition of the gate oxide film is performed after completion of the etching.