KR970017951A - Multiple pattern formation method using the same reticle - Google Patents

Multiple pattern formation method using the same reticle Download PDF

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Publication number
KR970017951A
KR970017951A KR1019950031818A KR19950031818A KR970017951A KR 970017951 A KR970017951 A KR 970017951A KR 1019950031818 A KR1019950031818 A KR 1019950031818A KR 19950031818 A KR19950031818 A KR 19950031818A KR 970017951 A KR970017951 A KR 970017951A
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KR
South Korea
Prior art keywords
pattern
forming
film
interlayer insulating
photoresist
Prior art date
Application number
KR1019950031818A
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Korean (ko)
Inventor
여기성
여정호
남정림
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950031818A priority Critical patent/KR970017951A/en
Publication of KR970017951A publication Critical patent/KR970017951A/en

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Abstract

본 발명은 동일한 리티클을 사용하여 반도체기판상에 복수의 패턴을 형성하는 반도체장치의 제조방법에 관한 것으로서, 그 방법은 상기 반도체기판상에 층간절연막을 도포하는 공정과; 리터클을 사용하여 소정패턴의 제1감광막을 형성하는 공정과; 상기 소정패턴의 감광막패턴을 마스크로 사용하여 상기 층간절연막을 선택적으로 제거하여 콘택홀을 형성하는 공정과; 상기 콘택홀을 충진하면서 상기 층간절연막상에 패턴대상막을 도포하는 공정과; 상기 동일한 리티클을 사용하여 소정패턴의 제2감광막을 형성하는 공정과, 상기 소정패턴의 제2감광막패턴을 마스크로 사용하여 상기 패턴대상막을 선택적으로 제거하는 공정을 포함한다. 본 발명의 패턴형성방법에 의하면 동일한 리티클을 사용하여 복수의 패턴을 형성할 수 있기 때문에 많은 리티클을 사용할 필요가 없을 뿐만 아니라, 적층에 대한 층대층의 오정렬을 방지할 수 있다.The present invention relates to a method of manufacturing a semiconductor device for forming a plurality of patterns on a semiconductor substrate using the same liticle, the method comprising: applying an interlayer insulating film on the semiconductor substrate; Forming a first photosensitive film having a predetermined pattern by using a ruffle; Forming a contact hole by selectively removing the interlayer insulating layer using the photoresist pattern of the predetermined pattern as a mask; Applying a pattern target film on the interlayer insulating film while filling the contact hole; Forming a second photoresist film of a predetermined pattern using the same liticle; and selectively removing the pattern target film using the second photoresist film pattern of the predetermined pattern as a mask. According to the pattern forming method of the present invention, since a plurality of patterns can be formed using the same rible, it is not necessary to use many ribules, and the misalignment of the layer-to-layer layer for lamination can be prevented.

Description

동일 리티클(reticle)을 사용하는 복수의 패턴형성방법Multiple pattern formation method using the same reticle

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 따른 패턴형성방법의 공정수순을 보여주는 플로우차트,3 is a flowchart showing the process sequence of the pattern forming method according to the present invention,

제4A도 내지 제4G도는 본 발명의 패턴형성방법을 이용하여 반도체장치를 제조하는 순차적인 제조공정을 보인 단면도이다.4A to 4G are cross-sectional views showing a sequential manufacturing process for manufacturing a semiconductor device using the pattern forming method of the present invention.

Claims (2)

반도체기판상에 복수의 패턴을 형성하는 반도체장치의 제조방법에 있어서, 상기 반도체기판상에 층간절연막을 도포하는 공정과, 리티클을 사용하여 소정패턴의 제1감광막을 형성하는 공정과, 상기 소정패턴의 감광막패턴을 마스크로 사용하여 상기 층간절연막을 선택적으로 제거하여 콘택홀을 형성하는 공정과; 상기 콘택홀을 충진하면서 상기 층간절연막상에 패턴대상막을 도포하는 공정과; 상기 동일한 리티클을 사용하여 소정패턴의 제2감광막을 형성하는 공정과; 상기 소정패턴의 제2감광막패턴을 마스크로 사용하여 상기 패턴대상막을 선택적으로 제거하는 공정을 포함하는 것을 특징으로 하는 패턴형성방법.A method of manufacturing a semiconductor device for forming a plurality of patterns on a semiconductor substrate, the method comprising: applying an interlayer insulating film on the semiconductor substrate; forming a first photosensitive film having a predetermined pattern by using a ripple; Forming a contact hole by selectively removing the interlayer insulating film using the photosensitive film pattern of the pattern as a mask; Applying a pattern target film on the interlayer insulating film while filling the contact hole; Forming a second photosensitive film having a predetermined pattern by using the same rickle; And selectively removing the pattern target layer by using the second photoresist pattern of the predetermined pattern as a mask. 제1항에 있어서 상기 제1감광막패턴은 포지티브 감광막이고 그리고 제2감광막패턴은 네거티브 감광막인 것을 특징으로 하는 패턴형성방법.The pattern forming method according to claim 1, wherein the first photoresist pattern is a positive photoresist film and the second photoresist pattern is a negative photoresist film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950031818A 1995-09-26 1995-09-26 Multiple pattern formation method using the same reticle KR970017951A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950031818A KR970017951A (en) 1995-09-26 1995-09-26 Multiple pattern formation method using the same reticle

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950031818A KR970017951A (en) 1995-09-26 1995-09-26 Multiple pattern formation method using the same reticle

Publications (1)

Publication Number Publication Date
KR970017951A true KR970017951A (en) 1997-04-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031818A KR970017951A (en) 1995-09-26 1995-09-26 Multiple pattern formation method using the same reticle

Country Status (1)

Country Link
KR (1) KR970017951A (en)

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