KR970007501A - - Google Patents
Info
- Publication number
- KR970007501A KR970007501A KR19960027236A KR19960027236A KR970007501A KR 970007501 A KR970007501 A KR 970007501A KR 19960027236 A KR19960027236 A KR 19960027236A KR 19960027236 A KR19960027236 A KR 19960027236A KR 970007501 A KR970007501 A KR 970007501A
- Authority
- KR
- South Korea
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/701—Off-axis setting using an aperture
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Control Of Exposure In Printing And Copying (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17071595A JP3487383B2 (ja) | 1995-07-06 | 1995-07-06 | 露光装置及びそれを用いる素子製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970007501A true KR970007501A (ko) | 1997-02-21 |
Family
ID=15910060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR19960027236A KR970007501A (ko) | 1995-07-06 | 1996-07-05 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5894341A (ko) |
JP (1) | JP3487383B2 (ko) |
KR (1) | KR970007501A (ko) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1092722A (ja) * | 1996-09-18 | 1998-04-10 | Nikon Corp | 露光装置 |
IL132432A0 (en) * | 1997-04-18 | 2001-03-19 | Nikon Corp | An exposure apparatus exposure method using the same and method of manufacture of circuit device |
US6563565B2 (en) * | 1997-08-27 | 2003-05-13 | Nikon Corporation | Apparatus and method for projection exposure |
KR100274605B1 (ko) * | 1997-12-05 | 2000-12-15 | 윤종용 | 웨이퍼 노광설비의 칩 레벨링 장치 |
US6833904B1 (en) | 1998-02-27 | 2004-12-21 | Nikon Corporation | Exposure apparatus and method of fabricating a micro-device using the exposure apparatus |
JP4238390B2 (ja) * | 1998-02-27 | 2009-03-18 | 株式会社ニコン | 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法 |
EP1069600A4 (en) * | 1998-03-24 | 2002-11-20 | Nikon Corp | ILLUMINATOR, EXPOSURE METHOD AND APPARATUS, METHOD FOR MANUFACTURING SAID DEVICE |
WO1999052130A1 (fr) * | 1998-04-07 | 1999-10-14 | Nikon Corporation | Procede d'exposition, appareil d'exposition, son procede de production, dispositif et son procede de fabrication |
JPH11307430A (ja) | 1998-04-23 | 1999-11-05 | Canon Inc | 露光装置およびデバイス製造方法ならびに駆動装置 |
US6760124B1 (en) * | 2000-03-22 | 2004-07-06 | Hewlett-Packard Development Company, L.P. | Software determination of led brightness and exposure |
US6970811B1 (en) * | 2000-03-22 | 2005-11-29 | Hewlett-Packard Development Company, L.P. | Hardware modeling of LED relative brightness |
DE10040998A1 (de) * | 2000-08-22 | 2002-03-14 | Zeiss Carl | Projektionsbelichtungsanlage |
JP4230676B2 (ja) * | 2001-04-27 | 2009-02-25 | 株式会社東芝 | 露光装置の照度むらの測定方法、照度むらの補正方法、半導体デバイスの製造方法及び露光装置 |
JP4174307B2 (ja) | 2002-12-02 | 2008-10-29 | キヤノン株式会社 | 露光装置 |
JP2005128238A (ja) * | 2003-10-23 | 2005-05-19 | Tadahiro Omi | マスクリピータ、パターン描画装置、及びグレースケール手法 |
US7663734B2 (en) | 2003-04-11 | 2010-02-16 | Tadahiro Ohmi | Pattern writing system and pattern writing method |
JP2009510792A (ja) * | 2005-10-04 | 2009-03-12 | カール・ツァイス・エスエムティー・アーゲー | リソグラフィ装置及び制御方法 |
JP4756984B2 (ja) * | 2005-10-07 | 2011-08-24 | キヤノン株式会社 | 露光装置、露光装置の制御方法およびデバイスの製造方法 |
US8411270B2 (en) * | 2008-01-17 | 2013-04-02 | International Business Machines Corporation | Monitoring stage alignment and related stage and calibration target |
US8201994B2 (en) * | 2008-08-22 | 2012-06-19 | The Boeing Company | Flexible thermal cycle test equipment for concentrator solar cells |
US20120063485A1 (en) * | 2011-03-28 | 2012-03-15 | Primestar Solar, Inc. | Thermal endurance testing apparatus and methods for photovoltaic modules |
WO2016031068A1 (ja) * | 2014-08-29 | 2016-03-03 | ギガフォトン株式会社 | レーザ装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4376581A (en) * | 1979-12-20 | 1983-03-15 | Censor Patent- Und Versuchs-Anstalt | Method of positioning disk-shaped workpieces, preferably semiconductor wafers |
JPS587618A (ja) * | 1981-07-07 | 1983-01-17 | Canon Inc | 測光回路の温度補償方式 |
US4712910A (en) * | 1984-01-05 | 1987-12-15 | Nippon Kogaku K.K. | Exposure method and apparatus for semiconductor fabrication equipment |
JPS60158626A (ja) * | 1984-01-30 | 1985-08-20 | Canon Inc | 半導体露光装置 |
JPS6119129A (ja) * | 1984-07-05 | 1986-01-28 | Nippon Kogaku Kk <Nikon> | 投影光学装置 |
JPH0810124B2 (ja) * | 1987-07-03 | 1996-01-31 | 株式会社ニコン | 露光装置 |
EP0357423B1 (en) * | 1988-09-02 | 1995-03-15 | Canon Kabushiki Kaisha | An exposure apparatus |
KR930004897B1 (ko) * | 1989-01-17 | 1993-06-09 | 스미도모덴기고오교오 가부시기가이샤 | 광센서 |
JPH03139634A (ja) * | 1989-10-26 | 1991-06-13 | Brother Ind Ltd | 画像形成装置 |
JP3049775B2 (ja) * | 1990-12-27 | 2000-06-05 | 株式会社ニコン | 投影露光装置及び方法、並びに素子製造方法 |
US5266792A (en) * | 1991-10-28 | 1993-11-30 | Simmonds Precision Products, Inc. | Temperature compensated optical detector |
US5329336A (en) * | 1992-07-06 | 1994-07-12 | Nikon Corporation | Exposure method and apparatus |
US5581324A (en) * | 1993-06-10 | 1996-12-03 | Nikon Corporation | Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors |
-
1995
- 1995-07-06 JP JP17071595A patent/JP3487383B2/ja not_active Expired - Fee Related
-
1996
- 1996-07-05 US US08/677,365 patent/US5894341A/en not_active Expired - Fee Related
- 1996-07-05 KR KR19960027236A patent/KR970007501A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPH0922120A (ja) | 1997-01-21 |
JP3487383B2 (ja) | 2004-01-19 |
US5894341A (en) | 1999-04-13 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |