KR970003478A - Contact hole formation method of semiconductor device - Google Patents
Contact hole formation method of semiconductor device Download PDFInfo
- Publication number
- KR970003478A KR970003478A KR1019950017222A KR19950017222A KR970003478A KR 970003478 A KR970003478 A KR 970003478A KR 1019950017222 A KR1019950017222 A KR 1019950017222A KR 19950017222 A KR19950017222 A KR 19950017222A KR 970003478 A KR970003478 A KR 970003478A
- Authority
- KR
- South Korea
- Prior art keywords
- furnace
- contact hole
- semiconductor substrate
- oxide film
- etching
- Prior art date
Links
Abstract
본 발명은 반도체 소자에서 콘택홀을 형성하는 방법을 개시한다. 개시된 방법은 반도체 기판상에 형성된 절연산화막의 상부에 소정의 감광막 패턴을 형성하는 단계; 상기 반도체 기판을 식각용 노에 도입하는 단계; 및 탄화수소(CxHy)와 함께 불소 - 베이스 가스를 상기의 노에 구비된 배관을 통해 노안에 도입하여 유동시켜서 반도체 기판상의 상기 절연산화막을 선택적으로 식각하여 콘택홀을 형성하는 단계를 포함한다. 개시된 방법에 의하면, 콘택홀의 프로필을 수직하게 형성할 수 있고 식각 속도를 향상시킬 수 있으므로, 소자의 신뢰도 및 생산성을 향상시킬 수 있다.The present invention discloses a method of forming contact holes in a semiconductor device. The disclosed method comprises forming a predetermined photoresist pattern on top of an insulating oxide film formed on a semiconductor substrate; Introducing the semiconductor substrate into an etching furnace; And introducing fluorine-base gas together with hydrocarbons (CxHy) into the furnace through a pipe provided in the furnace to flow therein to selectively etch the insulating oxide film on the semiconductor substrate to form a contact hole. According to the disclosed method, since the profile of the contact hole can be formed vertically and the etching speed can be improved, the reliability and productivity of the device can be improved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950017222A KR970003478A (en) | 1995-06-23 | 1995-06-23 | Contact hole formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950017222A KR970003478A (en) | 1995-06-23 | 1995-06-23 | Contact hole formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970003478A true KR970003478A (en) | 1997-01-28 |
Family
ID=66524333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950017222A KR970003478A (en) | 1995-06-23 | 1995-06-23 | Contact hole formation method of semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR970003478A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0594974A (en) * | 1991-10-02 | 1993-04-16 | Sony Corp | Dry etching method |
KR930020591A (en) * | 1992-03-04 | 1993-10-20 | 사토 후미오 | Dry etching method |
JPH0629252A (en) * | 1992-07-07 | 1994-02-04 | Seiko Epson Corp | Manufacture of semiconductor device |
JPH06163476A (en) * | 1992-11-18 | 1994-06-10 | Sony Corp | Dry etching method |
-
1995
- 1995-06-23 KR KR1019950017222A patent/KR970003478A/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0594974A (en) * | 1991-10-02 | 1993-04-16 | Sony Corp | Dry etching method |
KR930020591A (en) * | 1992-03-04 | 1993-10-20 | 사토 후미오 | Dry etching method |
JPH0629252A (en) * | 1992-07-07 | 1994-02-04 | Seiko Epson Corp | Manufacture of semiconductor device |
JPH06163476A (en) * | 1992-11-18 | 1994-06-10 | Sony Corp | Dry etching method |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |