KR970003478A - Contact hole formation method of semiconductor device - Google Patents

Contact hole formation method of semiconductor device Download PDF

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Publication number
KR970003478A
KR970003478A KR1019950017222A KR19950017222A KR970003478A KR 970003478 A KR970003478 A KR 970003478A KR 1019950017222 A KR1019950017222 A KR 1019950017222A KR 19950017222 A KR19950017222 A KR 19950017222A KR 970003478 A KR970003478 A KR 970003478A
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KR
South Korea
Prior art keywords
furnace
contact hole
semiconductor substrate
oxide film
etching
Prior art date
Application number
KR1019950017222A
Other languages
Korean (ko)
Inventor
남기원
이기엽
배영헌
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950017222A priority Critical patent/KR970003478A/en
Publication of KR970003478A publication Critical patent/KR970003478A/en

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Abstract

본 발명은 반도체 소자에서 콘택홀을 형성하는 방법을 개시한다. 개시된 방법은 반도체 기판상에 형성된 절연산화막의 상부에 소정의 감광막 패턴을 형성하는 단계; 상기 반도체 기판을 식각용 노에 도입하는 단계; 및 탄화수소(CxHy)와 함께 불소 - 베이스 가스를 상기의 노에 구비된 배관을 통해 노안에 도입하여 유동시켜서 반도체 기판상의 상기 절연산화막을 선택적으로 식각하여 콘택홀을 형성하는 단계를 포함한다. 개시된 방법에 의하면, 콘택홀의 프로필을 수직하게 형성할 수 있고 식각 속도를 향상시킬 수 있으므로, 소자의 신뢰도 및 생산성을 향상시킬 수 있다.The present invention discloses a method of forming contact holes in a semiconductor device. The disclosed method comprises forming a predetermined photoresist pattern on top of an insulating oxide film formed on a semiconductor substrate; Introducing the semiconductor substrate into an etching furnace; And introducing fluorine-base gas together with hydrocarbons (CxHy) into the furnace through a pipe provided in the furnace to flow therein to selectively etch the insulating oxide film on the semiconductor substrate to form a contact hole. According to the disclosed method, since the profile of the contact hole can be formed vertically and the etching speed can be improved, the reliability and productivity of the device can be improved.

Description

반도체 소자의 콘택홀 형성방법Contact hole formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (4)

반도체 기판상의 절연산화막을 식각하여 금속 배선들 사이를 전기적으로 연결시키기 위한 콘택홀을 형성하는 방법에 있어서, (가) 반도체 기판상에 형성된 절연산화막의 상부에 소정의 감광막 패턴을 형성하는 단계; (나) 상기 반도체 기판을 식각용 노에 도입하는 단계; (다) 탄화수소(CxHy)와 함께 불소 - 베이스 가스(fluorine - based gas)를, 상기의 노에 구비된 배관을 통해 도입하고, 노안에서 유동시켜서 반도체 기판 상의 상기 절연산화막을 선택적으로 식각하는 단계를 포함하는 것을 특징으로 하는 반도체소자의 콘택홀 형성방법.A method of forming a contact hole for etching an insulating oxide film on a semiconductor substrate to electrically connect metal wires, the method comprising: (a) forming a predetermined photoresist pattern on top of an insulating oxide film formed on a semiconductor substrate; (B) introducing the semiconductor substrate into an etching furnace; (C) introducing a fluorine-based gas together with a hydrocarbon (CxHy) through a pipe provided in the furnace, and flowing in the furnace to selectively etch the insulating oxide film on the semiconductor substrate. A contact hole forming method of a semiconductor device comprising a. 제1항에 있어서, 탄화수소(CxHy) 가스 및 불소 - 베이스 가스가 각각 분리된 배관을 통해 식각용 노안에 주입되어 유동하는 것을 특징으로 하는 반도체소자의 콘택홀 형성방법.The method of claim 1, wherein the hydrocarbon (CxHy) gas and the fluorine-based gas are injected into the etching furnace and flow through the separated pipes, respectively. 제1항에 있어서, 탄화수소(CxHy) 가스 및 불소 - 베이스 가스가 하나의 배관을 통해 식각용 노안에 주입되어 유동하는 것을 특징으로 하는 반도체소자의 콘택홀 형성방법.The method of claim 1, wherein a hydrocarbon (CxHy) gas and a fluorine-based gas are injected into the etching furnace through one pipe and flow therein. 제1항에 있어서, 불소 - 베이스 가스가 CH4- H2, C2F6, C3F8, C4H8및 CHF3로 이루어진 그룹에서 선택되는 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.The contact hole formation of a semiconductor device according to claim 1, wherein the fluorine-base gas is selected from the group consisting of CH 4 -H 2 , C 2 F 6 , C 3 F 8 , C 4 H 8 and CHF 3 . Way. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950017222A 1995-06-23 1995-06-23 Contact hole formation method of semiconductor device KR970003478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950017222A KR970003478A (en) 1995-06-23 1995-06-23 Contact hole formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950017222A KR970003478A (en) 1995-06-23 1995-06-23 Contact hole formation method of semiconductor device

Publications (1)

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KR970003478A true KR970003478A (en) 1997-01-28

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KR1019950017222A KR970003478A (en) 1995-06-23 1995-06-23 Contact hole formation method of semiconductor device

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0594974A (en) * 1991-10-02 1993-04-16 Sony Corp Dry etching method
KR930020591A (en) * 1992-03-04 1993-10-20 사토 후미오 Dry etching method
JPH0629252A (en) * 1992-07-07 1994-02-04 Seiko Epson Corp Manufacture of semiconductor device
JPH06163476A (en) * 1992-11-18 1994-06-10 Sony Corp Dry etching method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0594974A (en) * 1991-10-02 1993-04-16 Sony Corp Dry etching method
KR930020591A (en) * 1992-03-04 1993-10-20 사토 후미오 Dry etching method
JPH0629252A (en) * 1992-07-07 1994-02-04 Seiko Epson Corp Manufacture of semiconductor device
JPH06163476A (en) * 1992-11-18 1994-06-10 Sony Corp Dry etching method

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