KR960039376A - Capacitor manufacturing method with double cylinder electrode structure of semiconductor device - Google Patents

Abstract

A capacitor manufacturing method having a double cylindrical electrode structure of a semiconductor device is disclosed. In the capacitor manufacturing method of the present invention, forming a transistor on a semiconductor substrate, forming a transistor protective film on the semiconductor substrate, sequentially forming a first insulating film and a first material on the protective film, Forming a contact hole on the source region, forming a first conductive layer on the entire surface of the semiconductor substrate while filling the contact hole, forming a second material on the entire surface of the first conductive layer, the second material Patterning, forming a second conductive layer on the entire surface of the patterned second material, forming a third material layer on the entire surface of the second conductive layer, and then forming a spacer on the sidewalls of the second conductive layer by this method angle. Forming a third conductive layer on the entire surface of the semiconductor substrate; and etching the third, second, and first conductive layers to a cell unit, and simultaneously to the second and third conductive layers. By removing from the top to form a cylindrical electrode pattern of the second, the first, second and third material property and forming a cylindrical electrode of the second.

According to the present invention it is possible to adjust the distance between the two cylindrical electrodes, it is possible to adjust the thickness of each of the double cylindrical electrodes. Therefore, high integration of the memory can be achieved while securing the desired capacitance.

Description

Capacitor manufacturing method with double cylinder electrode structure of semiconductor device

As this is a public information case, the full text was not included.

2A to 2F are step-by-step views showing a capacitor manufacturing method having a double-cylindrical electrode structure of a semiconductor device using the present invention.

Claims (3)

Forming a transistor on the semiconductor substrate; Forming a transistor protection film on an entire surface of the semiconductor substrate on which the transistor is formed; Forming a first insulating film on the entire surface of the protective film; Forming a first material on an entire surface of the first insulating film; Sequentially etching the first material, the first insulating layer, and the protective insulating layer to form a contact hole on a source region of the transistor; Forming a first conductive layer on the entire surface of the semiconductor substrate while filling the contact hole; Forming a second material on the entire surface of the first conductive layer; Patterning the second material; Forming a second conductive layer on the entire surface of the patterned second material; Forming a third material layer on the entire surface of the second conductive layer and then anisotropically forming spacers on the sidewalls of the second conductive layer; Forming a third conductive layer on the entire surface of the semiconductor substrate; Sequentially etching the third, second, and first conductive layers on the entire surface of the semiconductor substrate by cell units, and patterning a double cylinder type electrode formed of the second and third conductive layers from above; Etching the entire surface of the semiconductor substrate to remove the first, second, and third materials to form a double cylindrical electrode; And forming a high dielectric film and a plate electrode on the front surface of the semiconductor substrate. The method of claim 1, wherein the first, second, and third insulating films are formed using a nitride film or an oxy-nitride. The method of claim 1, wherein the first, second and third conductive layers are doped using the same conductive impurity. ※ Note: The disclosure is based on the initial application.