KR960037862A - 저온화학증착법에 의한 TiN막의 형성방법 - Google Patents

저온화학증착법에 의한 TiN막의 형성방법 Download PDF

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Publication number
KR960037862A
KR960037862A KR1019950008782A KR19950008782A KR960037862A KR 960037862 A KR960037862 A KR 960037862A KR 1019950008782 A KR1019950008782 A KR 1019950008782A KR 19950008782 A KR19950008782 A KR 19950008782A KR 960037862 A KR960037862 A KR 960037862A
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South Korea
Prior art keywords
reactor
ticl
tin film
low temperature
vapor deposition
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KR1019950008782A
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English (en)
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KR0154293B1 (ko
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이정중
민우식
박종익
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이정중
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Priority to KR1019950008782A priority Critical patent/KR0154293B1/ko
Publication of KR960037862A publication Critical patent/KR960037862A/ko
Application granted granted Critical
Publication of KR0154293B1 publication Critical patent/KR0154293B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 TiCl4와 NH3를 사용하여 저온화학증착법으로 양질의 두꺼운 TiN막을 얻을 수 있는 방법에 관한 것으로, 본 발명에 의하면 좁은 기체관을 통하여 반응로내로 유입되는 TiCl4기체가 반응로 내부에서 충분한 체류시간을 확보할 수 있도록 하여 줌으로써 반응기체의 불충분한 예열로 인한 TiN막내의 불순물 잔존 등에 따른 코팅층의 접착력의 악화등의 문제점을 극복함으로써 종래의 방법에 비해 에너지, 비용등의 면에서 상당한 잇점이 있다.

Description

저온화학증착법에 의한 TiN막의 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도면(제1도)은 본 발명의 방법을 실시하기 위한 저온 열화학증착장치의 개략도이다.

Claims (4)

  1. TiCl4와 NH3를 사용하여 저온화학증착법으로 공구강 기판(10)상에 TiN막을 형성함에 있어서, 반응로(2)내로 유입된 상기 TiCl4기체의 상기 반응로(2)내에서의 체류기간을 장기화하여 TiN층 형성에 필요한 반응조건에 접합하도록 충분히 예열될 수 있게 하는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 상기 체류시간 장기화할 수 있는 방법으로는 상기 반응로(2)내의 상기 TiCl4기체관의 적어도 일부를 나선형으로 하여 이동경로를 길게함을 특징으로 하는 방법.
  3. 제1 또는 2항에 있어서, 상기 공구강은 M2고속도강임을 특징으로 하는 방법.
  4. 제3항에 있어서 상기 TiN층을 증착하기 전에 접착력 증대를 위하여 먼저 CrN층을 형성하는 질화열처리 공정을 수행하는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950008782A 1995-04-14 1995-04-14 저온화학증착법에 의한 TiN막의 형성방법 KR0154293B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950008782A KR0154293B1 (ko) 1995-04-14 1995-04-14 저온화학증착법에 의한 TiN막의 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950008782A KR0154293B1 (ko) 1995-04-14 1995-04-14 저온화학증착법에 의한 TiN막의 형성방법

Publications (2)

Publication Number Publication Date
KR960037862A true KR960037862A (ko) 1996-11-19
KR0154293B1 KR0154293B1 (ko) 1998-11-16

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KR1019950008782A KR0154293B1 (ko) 1995-04-14 1995-04-14 저온화학증착법에 의한 TiN막의 형성방법

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101459187B1 (ko) * 2012-08-24 2014-11-07 한국기초과학지원연구원 구형체 물질의 고른 코팅을 위한 ｃｖｄ 장치

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