KR960032822A - Semiconductor laser - Google Patents

Semiconductor laser Download PDF

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Publication number
KR960032822A
KR960032822A KR1019950003074A KR19950003074A KR960032822A KR 960032822 A KR960032822 A KR 960032822A KR 1019950003074 A KR1019950003074 A KR 1019950003074A KR 19950003074 A KR19950003074 A KR 19950003074A KR 960032822 A KR960032822 A KR 960032822A
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KR
South Korea
Prior art keywords
layer
semiconductor laser
cladding layer
lattice constant
cladding
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KR1019950003074A
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Korean (ko)
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KR0144187B1 (en
Inventor
김종석
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구자홍
Lg 전자 주식회사
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Priority to KR1019950003074A priority Critical patent/KR0144187B1/en
Publication of KR960032822A publication Critical patent/KR960032822A/en
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Publication of KR0144187B1 publication Critical patent/KR0144187B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/2207—GaAsP based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 반도체 레이저에 관한 것으로, AlGaAs와 밴드갭 에너지가 비슷하고 3족 원소의 조성을 변화시킴으로써 격자상수를 변화시킬 수 있는 InGaP와 InGaAlP를 배리어와 클래드층으로 이용한 830㎚의 TM모드발진 반도체 레이저에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser, wherein a 830 nm TM mode oscillation semiconductor laser using InGaP and InGaAlP as a barrier and cladding layer having similar bandgap energy to AlGaAs and capable of changing the lattice constant by changing the composition of group III elements. It is about.

본 발명은 기판위에 버퍼층과 제1클래드층, 상,하부에 각각 형성된 2개의 배리어층에 의해 텐사일 스트레인을 갖는 활성층, 제2클래드층 및 켑층이 차례로 형성되어 이루어진 반도체 레이저에 있어서, 상기 기판과 일치하는 격자상수로부터 상기 제1클래드층과 일치하는 격자상수를 갖는 조성으로 변화된 제1그레이디드층이 상기 제1클래드층 하부에 형성되고, 상기 제2클래드층과 일치하는 격자상수로부터 상기 캡층과 일치하는 격자상수를 갖는 조성으로 변화된 제2그레이디드층이 상기 제2클래드층 상부에 형성된 것을 특징으로 하는 반도체 레이저를 제공한다.The present invention relates to a semiconductor laser comprising a buffer layer, a first cladding layer, and two barrier layers respectively formed on an upper portion and an upper portion of an active layer having a tensile strain, a second cladding layer, and a thin layer. A first graded layer changed from a matching lattice constant to a composition having a lattice constant coinciding with the first cladding layer is formed below the first cladding layer and is formed with the cap layer from the lattice constant matching the second cladding layer. Provided is a semiconductor laser, characterized in that a second graded layer changed in composition with a matching lattice constant is formed over the second cladding layer.

Description

반도체 레이저Semiconductor laser

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 의한 반도체 레이저 구조도,3 is a structural diagram of a semiconductor laser according to the present invention

제5도는 본 발명에 의한 반도체 레이저 각층의 격자상수를 나타낸 도면.5 is a diagram showing the lattice constant of each layer of semiconductor laser according to the present invention.

Claims (6)

기판위에 버퍼층과 제1클래드층, 상,하부에 각각 형성된 2개의 배리어층에 의해 텐사일 스트레인을 갖는 활성층, 제2클래드층 및 켑층이 차례로 형성되어 이루어진 반도체 레이저에 있어서, 상기 기판과 일치하는 격자상수로부터 상기 제1클래드층과 일치하는 격자상수를 갖는 조성으로 변화된 제1그레이디드층이 상기 제1클래드층 하부에 형성되고, 상기 제2클래드층과 일치하는 격자상수로부터 상기 캡층과 일치하는 격자상수를 갖는 조성으로 변화된 제2그레이디드층이 상기 제2클래드층 상부에 형성된 것을 특징으로 하는 반도체 레이저.In a semiconductor laser in which an active layer having a tensile strain, a second cladding layer and a thin layer are sequentially formed by a buffer layer, a first cladding layer, and two barrier layers formed on and under a substrate, the lattice coinciding with the substrate. A lattice in which a first graded layer changed from a constant to a composition having a lattice constant coinciding with the first cladding layer is formed below the first cladding layer and coincides with the cap layer from a lattice constant coinciding with the second cladding layer And a second graded layer having a constant composition formed on the second cladding layer. 제1항에 있어서, 상기 활성층은 언도우프드 GaAs0.95P0.05로 이루어짐을 특징으로 하는 반도체 레이저.The semiconductor laser according to claim 1, wherein the active layer is made of undoped GaAs 0.95 P 0.05 . 제1항에 있어서, 상기 배리어층은 언도우프드 In0.61(Ga1-xAlx)0.39P(0≤x≤0.3으로 이루어짐을 특징으로 하는 반도체 레이저.The semiconductor laser according to claim 1, wherein the barrier layer is made of undoped In 0.61 (Ga 1-x Al x ) 0.39 P (0 ≦ x ≦ 0.3). 제1항에 있어서, 상기 제1 및 제2클래드층은 서로 반대도전형의 불순물로 각각 도핑된 In0.61(Ga1-xAlx)0.39P(0.4≤x≤1.0)으로 각각 이루어짐을 특징으로 하는 반도체 레이저.The method of claim 1, wherein the first and second cladding layers are each made of In 0.61 (Ga 1-x Al x ) 0.39 P (0.4 ≦ x ≦ 1.0) doped with impurities of opposite conductivity, respectively. Semiconductor laser. 제1항에 있어서, 상기 제1그레이디드층은 InyGa1-yP를 y를 0.5에서 0.61까지 서서히 변화시켜 조성한 것임을 특징으로 하는 반도체 레이저.The semiconductor laser according to claim 1, wherein the first graded layer is formed by gradually changing In y Ga 1-y P from 0.5 to 0.61. 제1항에 있어서, 상기 제2그레이디드층은 InyGa1-yP를 y를 0.61에서 0.5까지 서서히 변화시켜 조성한 것임을 특징으로 하는 반도체 레이저.The semiconductor laser according to claim 1, wherein the second graded layer is formed by gradually changing In y Ga 1-y P from y to 0.61 to 0.5. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950003074A 1995-02-17 1995-02-17 Semiconductor laser KR0144187B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950003074A KR0144187B1 (en) 1995-02-17 1995-02-17 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950003074A KR0144187B1 (en) 1995-02-17 1995-02-17 Semiconductor laser

Publications (2)

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KR960032822A true KR960032822A (en) 1996-09-17
KR0144187B1 KR0144187B1 (en) 1998-08-17

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101028276B1 (en) * 2004-06-07 2011-04-11 엘지이노텍 주식회사 Semiconductor laser diode and method for manufacturing using the same

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