KR950010235A

KR950010235A - Semiconductor laser device

Info

Publication number: KR950010235A
Application number: KR1019930020346A
Authority: KR
Inventors: 김종렬
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1993-09-28
Filing date: 1993-09-28
Publication date: 1995-04-26

Abstract

본 발명은 레이저 다이오드에 관한 것으로서 특히 EDFA(Erbium Doped Fiber Amplifiers)등에 사용되는 광통신 분야에 적용되는 광증폭 레이저 다이오드에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to laser diodes, and more particularly, to optical amplified laser diodes applied to the field of optical communications used in EDFA (Erbium Doped Fiber Amplifiers).

본 발명은 기판상에 형성된 버퍼층; 상기 버퍼층 상에 형성된 GaInP하부 클래드층; 상기 하부 클래드층에 형성된 GaAs하부 광유도층; 상기 하부 광유도층 상에 (GaAs)_m/(InAs)_n의 초격자로 구성된 활성층; 상기 활성층 상에 형성된 상부 광 유도층; 상기 상부 광유도층 상에 형성된 p-GaInP상부 클래드층을 구비함을 특징으로 한다.The present invention is a buffer layer formed on a substrate; A GaInP lower clad layer formed on the buffer layer; A GaAs lower light guide layer formed on the lower clad layer; An active layer composed of a superlattice of (GaAs) _m / (InAs) _n on the lower photoguide layer; An upper light guide layer formed on the active layer; And a p-GaInP upper clad layer formed on the upper light guide layer.

이상과 같은 본 발명 반도체 레이저 소자는 (InAs)_m과(GaAs)_n의 불규칙 단주기 초격자층을 활성층으로 사용하여 임계전류밀도를 저감화하고 발광효율을 높인다.As described above, the semiconductor laser device of the present invention uses an irregular short-period superlattice layer of (InAs) _m and (GaAs) _n as an active layer to reduce the critical current density and to increase luminous efficiency.

Description

Semiconductor laser device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래 기술에 따른 반도체 레이저 소자의 개략적 단면도,1 is a schematic cross-sectional view of a semiconductor laser device according to the prior art,

제2도는 본 발명에 따른 반도체 레이저 소자의 개략적 단면도,2 is a schematic cross-sectional view of a semiconductor laser device according to the present invention,

제3도는 제2도의 활성층을 확대하여 간략하게 도시한 단면도.3 is a simplified cross-sectional view of an enlarged view of the active layer of FIG.

Claims

A buffer layer formed on the substrate: a lower clad layer formed on the buffer layer; A lower light guide layer formed on the lower clad layer; An active layer composed of a superlattice of (GaAs) _m / (InAs) _n on the lower photoguide layer; An upper light guide layer formed on the active layer; And an upper clad layer formed on the upper light guide layer.

The laser diode according to claim 1, wherein the active layer is a plurality of layers of superlattices alternately stacked with m and n of GaAs and InAs different from 1-8.

The laser diode of claim 1, wherein the upper light guide layer and the lower light guide layer are formed of GaAs that is not doped with impurities.

The method of claim 1, wherein the substrate is n-GaAs, the buffer layer is n-GaAs, the lower clad layer is n-GaInP, the lower light guide layer is GaAs, the active layer is (GaAs) _m / (InAs) _n seconds The lattice layer, the upper light guide layer is GaAs, the upper clad layer is a laser diode, characterized in that formed of p-GalnP.

※ Note: The disclosure is based on the initial application.